Abstract
Room-temperature mechanical properties of thin films and ceramics of doped and undoped ceria are reviewed with an emphasis on the anelastic behavior of the material. Notably, the unrelaxed Young's modulus of Gd-doped ceria ceramics measured by ultrasonic pulse-echo techniques is >200 GPa, while the relaxed biaxial modulus, calculated from the stress/strain ratio of thin films, is ≈10 times smaller. Oxygen-deficient ceria exhibits a number of anelastic effects, such as hysteresis of the lattice parameter, strain-dependent Poisson's ratio, room-temperature creep, and nonclassical electrostriction. Methods of measuring these properties are discussed, as well as the applicability of Raman spectroscopy for evaluating strain in thin films of Gd-doped ceria. Special attention is paid to detection of the time dependence of anelastic effects. Both the practical advantages and disadvantages of anelasticity on the design and stability of microscopic devices dependent on ceria thin films are discussed, and methods of mitigating the latter are suggested, with the aim of providing a cautionary note for materials scientists and engineers designing devices containing thin films or bulk ceria, as well as providing data-based constraints for theoreticians who are involved in modeling of the unusual electrical and electromechanical properties of undoped and doped ceria.
| Original language | English |
|---|---|
| Article number | 1707455 |
| Journal | Advanced Materials |
| Volume | 30 |
| Issue number | 41 |
| DOIs | |
| Publication status | Published - Oct 11 2018 |
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Keywords
- anelasticity
- creep
- Gd-doped ceria
- nonclassical electrostriction
- Young's modulus
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering
Cite this
Anelastic and Electromechanical Properties of Doped and Reduced Ceria. / Wachtel, Ellen; Frenkel, Anatoly I.; Lubomirsky, Igor.
In: Advanced Materials, Vol. 30, No. 41, 1707455, 11.10.2018.Research output: Contribution to journal › Review article
}
TY - JOUR
T1 - Anelastic and Electromechanical Properties of Doped and Reduced Ceria
AU - Wachtel, Ellen
AU - Frenkel, Anatoly I.
AU - Lubomirsky, Igor
PY - 2018/10/11
Y1 - 2018/10/11
N2 - Room-temperature mechanical properties of thin films and ceramics of doped and undoped ceria are reviewed with an emphasis on the anelastic behavior of the material. Notably, the unrelaxed Young's modulus of Gd-doped ceria ceramics measured by ultrasonic pulse-echo techniques is >200 GPa, while the relaxed biaxial modulus, calculated from the stress/strain ratio of thin films, is ≈10 times smaller. Oxygen-deficient ceria exhibits a number of anelastic effects, such as hysteresis of the lattice parameter, strain-dependent Poisson's ratio, room-temperature creep, and nonclassical electrostriction. Methods of measuring these properties are discussed, as well as the applicability of Raman spectroscopy for evaluating strain in thin films of Gd-doped ceria. Special attention is paid to detection of the time dependence of anelastic effects. Both the practical advantages and disadvantages of anelasticity on the design and stability of microscopic devices dependent on ceria thin films are discussed, and methods of mitigating the latter are suggested, with the aim of providing a cautionary note for materials scientists and engineers designing devices containing thin films or bulk ceria, as well as providing data-based constraints for theoreticians who are involved in modeling of the unusual electrical and electromechanical properties of undoped and doped ceria.
AB - Room-temperature mechanical properties of thin films and ceramics of doped and undoped ceria are reviewed with an emphasis on the anelastic behavior of the material. Notably, the unrelaxed Young's modulus of Gd-doped ceria ceramics measured by ultrasonic pulse-echo techniques is >200 GPa, while the relaxed biaxial modulus, calculated from the stress/strain ratio of thin films, is ≈10 times smaller. Oxygen-deficient ceria exhibits a number of anelastic effects, such as hysteresis of the lattice parameter, strain-dependent Poisson's ratio, room-temperature creep, and nonclassical electrostriction. Methods of measuring these properties are discussed, as well as the applicability of Raman spectroscopy for evaluating strain in thin films of Gd-doped ceria. Special attention is paid to detection of the time dependence of anelastic effects. Both the practical advantages and disadvantages of anelasticity on the design and stability of microscopic devices dependent on ceria thin films are discussed, and methods of mitigating the latter are suggested, with the aim of providing a cautionary note for materials scientists and engineers designing devices containing thin films or bulk ceria, as well as providing data-based constraints for theoreticians who are involved in modeling of the unusual electrical and electromechanical properties of undoped and doped ceria.
KW - anelasticity
KW - creep
KW - Gd-doped ceria
KW - nonclassical electrostriction
KW - Young's modulus
UR - http://www.scopus.com/inward/record.url?scp=85050395776&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85050395776&partnerID=8YFLogxK
U2 - 10.1002/adma.201707455
DO - 10.1002/adma.201707455
M3 - Review article
C2 - 29984445
AN - SCOPUS:85050395776
VL - 30
JO - Advanced Materials
JF - Advanced Materials
SN - 0935-9648
IS - 41
M1 - 1707455
ER -