Angle-resolved photoemission study of the high-performance low-temperature thermoelectric material CSBi4Te6

V. A. Greanya, W. C. Tonjes, Rong Liu, C. G. Olson, D. Y. Chung, Mercouri G Kanatzidis

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We report a study of the valence-band electronic structure of the newly discovered thermoelectric material, CsBi4Te6, using angle-resolved photoelectron spectroscopy. This material exhibits quasi-one-dimensional behavior, which is related to its unique crystal structure. The highly anisotropic band dispersions might explain the large value of the figure of merit, ZT, observed in the hole-doped systems. Our experimental results are compared with a recent theoretical band-structure calculation.

Original languageEnglish
Article number205123
Pages (from-to)2051231-2051236
Number of pages6
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume65
Issue number20
Publication statusPublished - May 15 2002

    Fingerprint

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this