Angle-resolved photoemission study of the high-performance low-temperature thermoelectric material CSBi4Te6

V. A. Greanya, W. C. Tonjes, Rong Liu, C. G. Olson, D. Y. Chung, Mercouri G Kanatzidis

Research output: Contribution to journalArticle

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Abstract

We report a study of the valence-band electronic structure of the newly discovered thermoelectric material, CsBi4Te6, using angle-resolved photoelectron spectroscopy. This material exhibits quasi-one-dimensional behavior, which is related to its unique crystal structure. The highly anisotropic band dispersions might explain the large value of the figure of merit, ZT, observed in the hole-doped systems. Our experimental results are compared with a recent theoretical band-structure calculation.

Original languageEnglish
Article number205123
Pages (from-to)2051231-2051236
Number of pages6
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume65
Issue number20
Publication statusPublished - May 15 2002

Fingerprint

thermoelectric materials
Photoemission
photoelectric emission
Photoelectron spectroscopy
Valence bands
Dispersions
Band structure
Electronic structure
Crystal structure
figure of merit
Temperature
photoelectron spectroscopy
electronic structure
valence
crystal structure

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Angle-resolved photoemission study of the high-performance low-temperature thermoelectric material CSBi4Te6. / Greanya, V. A.; Tonjes, W. C.; Liu, Rong; Olson, C. G.; Chung, D. Y.; Kanatzidis, Mercouri G.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 65, No. 20, 205123, 15.05.2002, p. 2051231-2051236.

Research output: Contribution to journalArticle

Greanya, V. A. ; Tonjes, W. C. ; Liu, Rong ; Olson, C. G. ; Chung, D. Y. ; Kanatzidis, Mercouri G. / Angle-resolved photoemission study of the high-performance low-temperature thermoelectric material CSBi4Te6. In: Physical Review B - Condensed Matter and Materials Physics. 2002 ; Vol. 65, No. 20. pp. 2051231-2051236.
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