Angle-resolved photoemission study of the high-performance low-temperature thermoelectric material (formula presented)

V. A. Greanya, W. C. Tonjes, Rong Liu, C. G. Olson, D. Y. Chung, Mercouri G Kanatzidis

Research output: Contribution to journalArticle

Abstract

We report a study of the valence-band electronic structure of the newly discovered thermoelectric material, (formula presented) using angle-resolved photoelectron spectroscopy. This material exhibits quasi-one-dimensional behavior, which is related to its unique crystal structure. The highly anisotropic band dispersions might explain the large value of the figure of merit, (formula presented) observed in the hole-doped systems. Our experimental results are compared with a recent theoretical band-structure calculation.

Original languageEnglish
Pages (from-to)1-6
Number of pages6
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume65
Issue number20
DOIs
Publication statusPublished - Jan 1 2002

Fingerprint

thermoelectric materials
Photoemission
photoelectric emission
Photoelectron spectroscopy
Valence bands
Dispersions
Band structure
Electronic structure
Crystal structure
figure of merit
Temperature
photoelectron spectroscopy
electronic structure
valence
crystal structure

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Angle-resolved photoemission study of the high-performance low-temperature thermoelectric material (formula presented). / Greanya, V. A.; Tonjes, W. C.; Liu, Rong; Olson, C. G.; Chung, D. Y.; Kanatzidis, Mercouri G.

In: Physical Review B - Condensed Matter and Materials Physics, Vol. 65, No. 20, 01.01.2002, p. 1-6.

Research output: Contribution to journalArticle

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