Abstract
We report a study of the valence-band electronic structure of the newly discovered thermoelectric material, (formula presented) using angle-resolved photoelectron spectroscopy. This material exhibits quasi-one-dimensional behavior, which is related to its unique crystal structure. The highly anisotropic band dispersions might explain the large value of the figure of merit, (formula presented) observed in the hole-doped systems. Our experimental results are compared with a recent theoretical band-structure calculation.
| Original language | English |
|---|---|
| Pages (from-to) | 1-6 |
| Number of pages | 6 |
| Journal | Physical Review B - Condensed Matter and Materials Physics |
| Volume | 65 |
| Issue number | 20 |
| DOIs | |
| Publication status | Published - Jan 1 2002 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
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Greanya, V. A., Tonjes, W. C., Liu, R., Olson, C. G., Chung, D. Y., & Kanatzidis, M. G. (2002). Angle-resolved photoemission study of the high-performance low-temperature thermoelectric material (formula presented). Physical Review B - Condensed Matter and Materials Physics, 65(20), 1-6. https://doi.org/10.1103/PhysRevB.65.205123