Anisotropic compressibility and effects of pressure on the electronic structure and Tc for superconducting infinite layer compounds

D. L. Novikov; O. N. Mryasov; Arthur J Freeman

doi:10.1016/0921-4534(94)90042-6

Anisotropic compressibility and effects of pressure on the electronic structure and T_c for superconducting infinite layer compounds

D. L. Novikov, O. N. Mryasov, Arthur J Freeman

Northwestern University

Research output: Contribution to journal › Article

8 Citations (Scopus)

Abstract

Total energy local density determinations of the effects of pressure on the (Sr_1-xCa_x)_1-yCuO₂ infinite layer (IL) T_c=110 K superconductor show, that the compressibility is highly anisotropic. Surprisingly, the energy location of the van Hove singularity (vHs) moves towards E_F with pressure, thereby showing a correspondence between the number of holes (from dopants) needed to shift E_F down to the vHs and the pressure needed to be applied to a fixed dopant material to achieve the best T_c. Some consequences for understanding the pressure effects on the T_c of the Hg superconductors and possible experiments are suggested.

Original language	English
Pages (from-to)	246-252
Number of pages	7
Journal	Physica C: Superconductivity and its Applications
Volume	219
Issue number	1-2
DOIs	https://doi.org/10.1016/0921-4534(94)90042-6
Publication status	Published - Jan 1 1994

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ASJC Scopus subject areas

Condensed Matter Physics

Cite this

Novikov, D. L., Mryasov, O. N., & Freeman, A. J. (1994). Anisotropic compressibility and effects of pressure on the electronic structure and T_c for superconducting infinite layer compounds. Physica C: Superconductivity and its Applications, 219(1-2), 246-252. https://doi.org/10.1016/0921-4534(94)90042-6

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10.1016/0921-4534(94)90042-6