Anisotropy in thermoelectric properties of CsBi4Te6

Duck Young Chung, S. D. Mahanti, Wei Chen, Citrad Uher, Mercouri G Kanatzidis

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

CsBi4Te6 (ZT ∼ 0.8 at 225 K) shows highly anisotropic features in its crystal morphology and structure as expressed by the parallel infinite [Bi4Te6] rods which are linked via Bi-Bi bonds. Band calculations also point to a significant anisotropy in the carrier effective masses, and for this reason we examined the anisotropic thermoelectric properties of CsBi4Te6. The electrical conductivity, thermopower and thermal conductivity were measured along the three different crystallographic directions of the monoclinic structure of CsBi 4Te6. These measurements were performed on samples with different degrees of doping. The strong charge transport anisotropy of these samples was confirmed and also observed that the thermopower values along the c-axis direction (which is perpendicular to the layer of Cs atoms) was negative (-80 μV/K) while those along the needle direction (b-axis) and parallel to the [Bi4Te6] layers (a-axis) were p-type (50 100 μV/K at room temperature. Other anisotropic features in the crystal growth habit, electronic band structure, and electrical and thermal conductivities are also presented.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsG.S. Nolas, J. Yang, T.P. Hogan, D.C. Johnson
Pages141-148
Number of pages8
Volume793
Publication statusPublished - 2003
EventThermoelectric Materials 2003 - Research and Applications - Boston, MA., United States
Duration: Dec 1 2003Dec 3 2003

Other

OtherThermoelectric Materials 2003 - Research and Applications
CountryUnited States
CityBoston, MA.
Period12/1/0312/3/03

Fingerprint

Thermoelectric power
Thermal conductivity
Anisotropy
Crystal growth
Needles
Band structure
Charge transfer
Doping (additives)
Crystallization
Atoms
Crystals
Temperature
Electric Conductivity
Direction compound

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Chung, D. Y., Mahanti, S. D., Chen, W., Uher, C., & Kanatzidis, M. G. (2003). Anisotropy in thermoelectric properties of CsBi4Te6 In G. S. Nolas, J. Yang, T. P. Hogan, & D. C. Johnson (Eds.), Materials Research Society Symposium - Proceedings (Vol. 793, pp. 141-148)

Anisotropy in thermoelectric properties of CsBi4Te6 . / Chung, Duck Young; Mahanti, S. D.; Chen, Wei; Uher, Citrad; Kanatzidis, Mercouri G.

Materials Research Society Symposium - Proceedings. ed. / G.S. Nolas; J. Yang; T.P. Hogan; D.C. Johnson. Vol. 793 2003. p. 141-148.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Chung, DY, Mahanti, SD, Chen, W, Uher, C & Kanatzidis, MG 2003, Anisotropy in thermoelectric properties of CsBi4Te6 in GS Nolas, J Yang, TP Hogan & DC Johnson (eds), Materials Research Society Symposium - Proceedings. vol. 793, pp. 141-148, Thermoelectric Materials 2003 - Research and Applications, Boston, MA., United States, 12/1/03.
Chung DY, Mahanti SD, Chen W, Uher C, Kanatzidis MG. Anisotropy in thermoelectric properties of CsBi4Te6 In Nolas GS, Yang J, Hogan TP, Johnson DC, editors, Materials Research Society Symposium - Proceedings. Vol. 793. 2003. p. 141-148
Chung, Duck Young ; Mahanti, S. D. ; Chen, Wei ; Uher, Citrad ; Kanatzidis, Mercouri G. / Anisotropy in thermoelectric properties of CsBi4Te6 Materials Research Society Symposium - Proceedings. editor / G.S. Nolas ; J. Yang ; T.P. Hogan ; D.C. Johnson. Vol. 793 2003. pp. 141-148
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