Anomalous thermal expansion in the square-net compounds RE 4 T Ge8 (RE = Yb, Gd; T = Cr-Ni, Ag)

Sebastian C. Peter, Maria Chondroudi, Christos D. Malliakas, Mahalingam Balasubramanian, Mercouri G Kanatzidis

Research output: Contribution to journalArticle

30 Citations (Scopus)

Abstract

The family of materials RE4TGe8 (RE = Yb, Gd; T = transition metal) exhibits directional zero thermal expansion (ZTE) via a process that is associated with the linking of planar square nets in the third dimension. The Ge square nets in these compounds exhibit commensurate long-range modulations similar to those observed in charge-density-wave compounds. The ZTE is manifested in the plane of the square nets from 10 to 300 K with negligible volume expansion below ∼160 K. The specific atomic arrangement in RE 4TGe8 enables a Poisson-like mechanism that allows the structure to contract along one direction as it expands only slightly in the perpendicular direction.

Original languageEnglish
Pages (from-to)13840-13843
Number of pages4
JournalJournal of the American Chemical Society
Volume133
Issue number35
DOIs
Publication statusPublished - Sep 7 2011

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Thermal expansion
Hot Temperature
Charge density waves
Transition metals
Metals
Modulation
Direction compound

ASJC Scopus subject areas

  • Chemistry(all)
  • Catalysis
  • Biochemistry
  • Colloid and Surface Chemistry

Cite this

Anomalous thermal expansion in the square-net compounds RE 4 T Ge8 (RE = Yb, Gd; T = Cr-Ni, Ag). / Peter, Sebastian C.; Chondroudi, Maria; Malliakas, Christos D.; Balasubramanian, Mahalingam; Kanatzidis, Mercouri G.

In: Journal of the American Chemical Society, Vol. 133, No. 35, 07.09.2011, p. 13840-13843.

Research output: Contribution to journalArticle

Peter, Sebastian C. ; Chondroudi, Maria ; Malliakas, Christos D. ; Balasubramanian, Mahalingam ; Kanatzidis, Mercouri G. / Anomalous thermal expansion in the square-net compounds RE 4 T Ge8 (RE = Yb, Gd; T = Cr-Ni, Ag). In: Journal of the American Chemical Society. 2011 ; Vol. 133, No. 35. pp. 13840-13843.
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