Anthracenedicarboximides as air-stable N-channel semiconductors for thin-film transistors with remarkable current on-off ratios

Zhiming Wang, Choongik Kim, Antonio Facchetti, Tobin J Marks

Research output: Contribution to journalArticle

163 Citations (Scopus)

Abstract

A new n-type semiconductor family for organic field-effect transistors (FETs), based on core-unsubstituted and core-cyanated anthracenedicarboximides, is reported. By tuning electron affinity, these materials exhibit good electron-transport properties and stability in ambient as well as very high Ion/Ioff ratios. Unoptimized N,N-di-n-octyl-9,10-dicyano-2,3:6,7-anthracenedicarboximide (ADI8-CN2)-based FETs exhibit good electron mobilities (μe = 0.02 cm2/(V s)) and very high Ion/Ioff > 107 in ambient conditions.

Original languageEnglish
Pages (from-to)13362-13363
Number of pages2
JournalJournal of the American Chemical Society
Volume129
Issue number44
DOIs
Publication statusPublished - Nov 7 2007

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Semiconductors
Thin film transistors
Air
Electrons
Ions
Semiconductor materials
Electron transport properties
Organic field effect transistors
Electron affinity
Electron mobility
Electron Transport
Field effect transistors
Tuning

ASJC Scopus subject areas

  • Chemistry(all)

Cite this

Anthracenedicarboximides as air-stable N-channel semiconductors for thin-film transistors with remarkable current on-off ratios. / Wang, Zhiming; Kim, Choongik; Facchetti, Antonio; Marks, Tobin J.

In: Journal of the American Chemical Society, Vol. 129, No. 44, 07.11.2007, p. 13362-13363.

Research output: Contribution to journalArticle

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