Anthracenedicarboximides as air-stable N-channel semiconductors for thin-film transistors with remarkable current on-off ratios

Zhiming Wang; Choongik Kim; Antonio Facchetti; Tobin J. Marks

doi:10.1021/ja073306f

Anthracenedicarboximides as air-stable N-channel semiconductors for thin-film transistors with remarkable current on-off ratios

Zhiming Wang, Choongik Kim, Antonio Facchetti, Tobin J. Marks

Northwestern University

Research output: Contribution to journal › Article

167 Citations (Scopus)

Abstract

A new n-type semiconductor family for organic field-effect transistors (FETs), based on core-unsubstituted and core-cyanated anthracenedicarboximides, is reported. By tuning electron affinity, these materials exhibit good electron-transport properties and stability in ambient as well as very high I_on/I_off ratios. Unoptimized N,N-di-n-octyl-9,10-dicyano-2,3:6,7-anthracenedicarboximide (ADI8-CN₂)-based FETs exhibit good electron mobilities (μ_e = 0.02 cm²/(V s)) and very high I_on/I_off > 10⁷ in ambient conditions.

Original language	English
Pages (from-to)	13362-13363
Number of pages	2
Journal	Journal of the American Chemical Society
Volume	129
Issue number	44
DOIs	https://doi.org/10.1021/ja073306f
Publication status	Published - Nov 7 2007

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ASJC Scopus subject areas

Catalysis
Chemistry(all)
Biochemistry
Colloid and Surface Chemistry

Cite this

Wang, Z., Kim, C., Facchetti, A., & Marks, T. J. (2007). Anthracenedicarboximides as air-stable N-channel semiconductors for thin-film transistors with remarkable current on-off ratios. Journal of the American Chemical Society, 129(44), 13362-13363. https://doi.org/10.1021/ja073306f

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10.1021/ja073306f