TY - JOUR
T1 - Anthracenedicarboximides as air-stable N-channel semiconductors for thin-film transistors with remarkable current on-off ratios
AU - Wang, Zhiming
AU - Kim, Choongik
AU - Facchetti, Antonio
AU - Marks, Tobin J.
PY - 2007/11/7
Y1 - 2007/11/7
N2 - A new n-type semiconductor family for organic field-effect transistors (FETs), based on core-unsubstituted and core-cyanated anthracenedicarboximides, is reported. By tuning electron affinity, these materials exhibit good electron-transport properties and stability in ambient as well as very high Ion/Ioff ratios. Unoptimized N,N-di-n-octyl-9,10-dicyano-2,3:6,7-anthracenedicarboximide (ADI8-CN2)-based FETs exhibit good electron mobilities (μe = 0.02 cm2/(V s)) and very high Ion/Ioff > 107 in ambient conditions.
AB - A new n-type semiconductor family for organic field-effect transistors (FETs), based on core-unsubstituted and core-cyanated anthracenedicarboximides, is reported. By tuning electron affinity, these materials exhibit good electron-transport properties and stability in ambient as well as very high Ion/Ioff ratios. Unoptimized N,N-di-n-octyl-9,10-dicyano-2,3:6,7-anthracenedicarboximide (ADI8-CN2)-based FETs exhibit good electron mobilities (μe = 0.02 cm2/(V s)) and very high Ion/Ioff > 107 in ambient conditions.
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U2 - 10.1021/ja073306f
DO - 10.1021/ja073306f
M3 - Article
C2 - 17935325
AN - SCOPUS:35948935913
VL - 129
SP - 13362
EP - 13363
JO - Journal of the American Chemical Society
JF - Journal of the American Chemical Society
SN - 0002-7863
IS - 44
ER -