Anthracenedicarboximides as air-stable N-channel semiconductors for thin-film transistors with remarkable current on-off ratios

Zhiming Wang; Choongik Kim; Antonio Facchetti; Tobin J. Marks

doi:10.1021/ja073306f

Anthracenedicarboximides as air-stable N-channel semiconductors for thin-film transistors with remarkable current on-off ratios

Zhiming Wang, Choongik Kim, Antonio Facchetti, Tobin J. Marks

Northwestern University

Research output: Contribution to journal › Article

168 Citations (Scopus)

Abstract

A new n-type semiconductor family for organic field-effect transistors (FETs), based on core-unsubstituted and core-cyanated anthracenedicarboximides, is reported. By tuning electron affinity, these materials exhibit good electron-transport properties and stability in ambient as well as very high I_on/I_off ratios. Unoptimized N,N-di-n-octyl-9,10-dicyano-2,3:6,7-anthracenedicarboximide (ADI8-CN₂)-based FETs exhibit good electron mobilities (μ_e = 0.02 cm²/(V s)) and very high I_on/I_off > 10⁷ in ambient conditions.

Original language	English
Pages (from-to)	13362-13363
Number of pages	2
Journal	Journal of the American Chemical Society
Volume	129
Issue number	44
DOIs	https://doi.org/10.1021/ja073306f
Publication status	Published - Nov 7 2007

ASJC Scopus subject areas

Catalysis
Chemistry(all)
Biochemistry
Colloid and Surface Chemistry

Access to Document

10.1021/ja073306f

Fingerprint Dive into the research topics of 'Anthracenedicarboximides as air-stable N-channel semiconductors for thin-film transistors with remarkable current on-off ratios'. Together they form a unique fingerprint.

Cite this

Wang, Z., Kim, C., Facchetti, A., & Marks, T. J. (2007). Anthracenedicarboximides as air-stable N-channel semiconductors for thin-film transistors with remarkable current on-off ratios. Journal of the American Chemical Society, 129(44), 13362-13363. https://doi.org/10.1021/ja073306f

@article{78fbdbc60ac74f67a197033ce83190b4,

title = "Anthracenedicarboximides as air-stable N-channel semiconductors for thin-film transistors with remarkable current on-off ratios",

abstract = "A new n-type semiconductor family for organic field-effect transistors (FETs), based on core-unsubstituted and core-cyanated anthracenedicarboximides, is reported. By tuning electron affinity, these materials exhibit good electron-transport properties and stability in ambient as well as very high Ion/Ioff ratios. Unoptimized N,N-di-n-octyl-9,10-dicyano-2,3:6,7-anthracenedicarboximide (ADI8-CN2)-based FETs exhibit good electron mobilities (μe = 0.02 cm2/(V s)) and very high Ion/Ioff > 107 in ambient conditions.",

author = "Zhiming Wang and Choongik Kim and Antonio Facchetti and Marks, {Tobin J.}",

year = "2007",

month = nov,

day = "7",

doi = "10.1021/ja073306f",

language = "English",

volume = "129",

pages = "13362--13363",

journal = "Journal of the American Chemical Society",

issn = "0002-7863",

publisher = "American Chemical Society",

number = "44",

}

TY - JOUR

T1 - Anthracenedicarboximides as air-stable N-channel semiconductors for thin-film transistors with remarkable current on-off ratios

AU - Wang, Zhiming

AU - Kim, Choongik

AU - Facchetti, Antonio

AU - Marks, Tobin J.

PY - 2007/11/7

Y1 - 2007/11/7

N2 - A new n-type semiconductor family for organic field-effect transistors (FETs), based on core-unsubstituted and core-cyanated anthracenedicarboximides, is reported. By tuning electron affinity, these materials exhibit good electron-transport properties and stability in ambient as well as very high Ion/Ioff ratios. Unoptimized N,N-di-n-octyl-9,10-dicyano-2,3:6,7-anthracenedicarboximide (ADI8-CN2)-based FETs exhibit good electron mobilities (μe = 0.02 cm2/(V s)) and very high Ion/Ioff > 107 in ambient conditions.

AB - A new n-type semiconductor family for organic field-effect transistors (FETs), based on core-unsubstituted and core-cyanated anthracenedicarboximides, is reported. By tuning electron affinity, these materials exhibit good electron-transport properties and stability in ambient as well as very high Ion/Ioff ratios. Unoptimized N,N-di-n-octyl-9,10-dicyano-2,3:6,7-anthracenedicarboximide (ADI8-CN2)-based FETs exhibit good electron mobilities (μe = 0.02 cm2/(V s)) and very high Ion/Ioff > 107 in ambient conditions.

UR - http://www.scopus.com/inward/record.url?scp=35948935913&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=35948935913&partnerID=8YFLogxK

U2 - 10.1021/ja073306f

DO - 10.1021/ja073306f

M3 - Article

C2 - 17935325

AN - SCOPUS:35948935913

VL - 129

SP - 13362

EP - 13363

JO - Journal of the American Chemical Society

JF - Journal of the American Chemical Society

SN - 0002-7863

IS - 44

ER -