Applicability of a linear diffusion model to determination of the height of the potential barrier at the grain boundaries of Fe-doped SrTiO3

Chih Yuan S. Chang, Igor Lubomirsky, Sangtae Kim

Research output: Contribution to journalArticle

Abstract

The potential barrier formed at the grain boundaries in Fe-doped SrTiO3 is reported to be one of the main reasons of the exceptionally large grain boundary resistivity of the material. Of particular interest is thus how to accurately quantify the potential barrier height, Ψgb, in such electronic conductors. This study aims to expand the applicability of a linear diffusion model (namely I-V model) to electronic conductors. The I-V model has previously proven its success in accurate determination of Ψgb in popular ionic conductors. By employing 1 mol% Fe-doped SrTiO3 as a model material, the current-voltage characteristics of the grain boundary investigated demonstrate the power law behavior predicted by the I-V model, verifying the applicability of this model. The Ψgb estimated from the I-V model at different temperatures are compared with those from the resistivity ratio of the grain boundary to the bulk. The resistivity ratio has been exclusively used to determine Ψgb in various conductors over several decades and yet has limitations in its accuracy. The Ψgb determined by the I-V model are found to be substantially lower than those from the resistivity ratio; such discrepancy implies that the potential barrier only partially contributes to the high grain boundary resistivity of a lightly doped electron-hole conducting SrTiO3.

Original languageEnglish
Pages (from-to)19250-19256
Number of pages7
JournalPhysical Chemistry Chemical Physics
Volume20
Issue number28
DOIs
Publication statusPublished - Jan 1 2018

Fingerprint

Grain boundaries
grain boundaries
conductors
electrical resistivity
strontium titanium oxide
Current voltage characteristics
electronics
conduction
Electrons
electric potential

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physical and Theoretical Chemistry

Cite this

Applicability of a linear diffusion model to determination of the height of the potential barrier at the grain boundaries of Fe-doped SrTiO3 . / Chang, Chih Yuan S.; Lubomirsky, Igor; Kim, Sangtae.

In: Physical Chemistry Chemical Physics, Vol. 20, No. 28, 01.01.2018, p. 19250-19256.

Research output: Contribution to journalArticle

@article{501803cb6e4d4dfab37e3e0318ccb613,
title = "Applicability of a linear diffusion model to determination of the height of the potential barrier at the grain boundaries of Fe-doped SrTiO3",
abstract = "The potential barrier formed at the grain boundaries in Fe-doped SrTiO3 is reported to be one of the main reasons of the exceptionally large grain boundary resistivity of the material. Of particular interest is thus how to accurately quantify the potential barrier height, Ψgb, in such electronic conductors. This study aims to expand the applicability of a linear diffusion model (namely I-V model) to electronic conductors. The I-V model has previously proven its success in accurate determination of Ψgb in popular ionic conductors. By employing 1 mol{\%} Fe-doped SrTiO3 as a model material, the current-voltage characteristics of the grain boundary investigated demonstrate the power law behavior predicted by the I-V model, verifying the applicability of this model. The Ψgb estimated from the I-V model at different temperatures are compared with those from the resistivity ratio of the grain boundary to the bulk. The resistivity ratio has been exclusively used to determine Ψgb in various conductors over several decades and yet has limitations in its accuracy. The Ψgb determined by the I-V model are found to be substantially lower than those from the resistivity ratio; such discrepancy implies that the potential barrier only partially contributes to the high grain boundary resistivity of a lightly doped electron-hole conducting SrTiO3.",
author = "Chang, {Chih Yuan S.} and Igor Lubomirsky and Sangtae Kim",
year = "2018",
month = "1",
day = "1",
doi = "10.1039/c8cp02806k",
language = "English",
volume = "20",
pages = "19250--19256",
journal = "Physical Chemistry Chemical Physics",
issn = "1463-9076",
publisher = "Royal Society of Chemistry",
number = "28",

}

TY - JOUR

T1 - Applicability of a linear diffusion model to determination of the height of the potential barrier at the grain boundaries of Fe-doped SrTiO3

AU - Chang, Chih Yuan S.

AU - Lubomirsky, Igor

AU - Kim, Sangtae

PY - 2018/1/1

Y1 - 2018/1/1

N2 - The potential barrier formed at the grain boundaries in Fe-doped SrTiO3 is reported to be one of the main reasons of the exceptionally large grain boundary resistivity of the material. Of particular interest is thus how to accurately quantify the potential barrier height, Ψgb, in such electronic conductors. This study aims to expand the applicability of a linear diffusion model (namely I-V model) to electronic conductors. The I-V model has previously proven its success in accurate determination of Ψgb in popular ionic conductors. By employing 1 mol% Fe-doped SrTiO3 as a model material, the current-voltage characteristics of the grain boundary investigated demonstrate the power law behavior predicted by the I-V model, verifying the applicability of this model. The Ψgb estimated from the I-V model at different temperatures are compared with those from the resistivity ratio of the grain boundary to the bulk. The resistivity ratio has been exclusively used to determine Ψgb in various conductors over several decades and yet has limitations in its accuracy. The Ψgb determined by the I-V model are found to be substantially lower than those from the resistivity ratio; such discrepancy implies that the potential barrier only partially contributes to the high grain boundary resistivity of a lightly doped electron-hole conducting SrTiO3.

AB - The potential barrier formed at the grain boundaries in Fe-doped SrTiO3 is reported to be one of the main reasons of the exceptionally large grain boundary resistivity of the material. Of particular interest is thus how to accurately quantify the potential barrier height, Ψgb, in such electronic conductors. This study aims to expand the applicability of a linear diffusion model (namely I-V model) to electronic conductors. The I-V model has previously proven its success in accurate determination of Ψgb in popular ionic conductors. By employing 1 mol% Fe-doped SrTiO3 as a model material, the current-voltage characteristics of the grain boundary investigated demonstrate the power law behavior predicted by the I-V model, verifying the applicability of this model. The Ψgb estimated from the I-V model at different temperatures are compared with those from the resistivity ratio of the grain boundary to the bulk. The resistivity ratio has been exclusively used to determine Ψgb in various conductors over several decades and yet has limitations in its accuracy. The Ψgb determined by the I-V model are found to be substantially lower than those from the resistivity ratio; such discrepancy implies that the potential barrier only partially contributes to the high grain boundary resistivity of a lightly doped electron-hole conducting SrTiO3.

UR - http://www.scopus.com/inward/record.url?scp=85050537330&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85050537330&partnerID=8YFLogxK

U2 - 10.1039/c8cp02806k

DO - 10.1039/c8cp02806k

M3 - Article

AN - SCOPUS:85050537330

VL - 20

SP - 19250

EP - 19256

JO - Physical Chemistry Chemical Physics

JF - Physical Chemistry Chemical Physics

SN - 1463-9076

IS - 28

ER -