Application of selective chemical reaction concept for controlling the properties of oxides on GaAs

Robert P. H. Chang, J. J. Coleman, A. J. Polak, Leonard C Feldman, C. C. Chang

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

We demonstrate how GaAs can be selectively oxidized in a plasma to control the physical and chemical properties of the oxides. Electrical measurements indicate that charged traps can be removed.

Original languageEnglish
Pages (from-to)237-238
Number of pages2
JournalApplied Physics Letters
Volume34
Issue number3
DOIs
Publication statusPublished - 1979

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chemical properties
electrical measurement
chemical reactions
physical properties
traps
oxides

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Application of selective chemical reaction concept for controlling the properties of oxides on GaAs. / Chang, Robert P. H.; Coleman, J. J.; Polak, A. J.; Feldman, Leonard C; Chang, C. C.

In: Applied Physics Letters, Vol. 34, No. 3, 1979, p. 237-238.

Research output: Contribution to journalArticle

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