Application of selective chemical reaction concept for controlling the properties of oxides on GaAs

Robert P. H. Chang; J. J. Coleman; A. J. Polak; Leonard C Feldman; C. C. Chang

doi:10.1063/1.90750

Application of selective chemical reaction concept for controlling the properties of oxides on GaAs

Robert P. H. Chang, J. J. Coleman, A. J. Polak, Leonard C Feldman, C. C. Chang

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

We demonstrate how GaAs can be selectively oxidized in a plasma to control the physical and chemical properties of the oxides. Electrical measurements indicate that charged traps can be removed.

Original language	English
Pages (from-to)	237-238
Number of pages	2
Journal	Applied Physics Letters
Volume	34
Issue number	3
DOIs	https://doi.org/10.1063/1.90750
Publication status	Published - 1979

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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10.1063/1.90750

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@article{c2babdc7709046bfaa732c725bb7cb9b,

title = "Application of selective chemical reaction concept for controlling the properties of oxides on GaAs",

abstract = "We demonstrate how GaAs can be selectively oxidized in a plasma to control the physical and chemical properties of the oxides. Electrical measurements indicate that charged traps can be removed.",

author = "Chang, {Robert P. H.} and Coleman, {J. J.} and Polak, {A. J.} and Feldman, {Leonard C} and Chang, {C. C.}",

year = "1979",

doi = "10.1063/1.90750",

language = "English",

volume = "34",

pages = "237--238",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "3",

}

TY - JOUR

T1 - Application of selective chemical reaction concept for controlling the properties of oxides on GaAs

AU - Chang, Robert P. H.

AU - Coleman, J. J.

AU - Polak, A. J.

AU - Feldman, Leonard C

AU - Chang, C. C.

PY - 1979

Y1 - 1979

N2 - We demonstrate how GaAs can be selectively oxidized in a plasma to control the physical and chemical properties of the oxides. Electrical measurements indicate that charged traps can be removed.

AB - We demonstrate how GaAs can be selectively oxidized in a plasma to control the physical and chemical properties of the oxides. Electrical measurements indicate that charged traps can be removed.

UR - http://www.scopus.com/inward/record.url?scp=0010375028&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0010375028&partnerID=8YFLogxK

U2 - 10.1063/1.90750

DO - 10.1063/1.90750

M3 - Article

AN - SCOPUS:0010375028

VL - 34

SP - 237

EP - 238

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 3

ER -