Application of selective chemical reaction concept for controlling the properties of oxides on GaAs

Robert P. H. Chang; J. J. Coleman; A. J. Polak; Leonard C Feldman; C. C. Chang

doi:10.1063/1.90750

Application of selective chemical reaction concept for controlling the properties of oxides on GaAs

Robert P. H. Chang, J. J. Coleman, A. J. Polak, Leonard C Feldman, C. C. Chang

Research output: Contribution to journal › Article

29 Citations (Scopus)

Abstract

We demonstrate how GaAs can be selectively oxidized in a plasma to control the physical and chemical properties of the oxides. Electrical measurements indicate that charged traps can be removed.

Original language	English
Pages (from-to)	237-238
Number of pages	2
Journal	Applied Physics Letters
Volume	34
Issue number	3
DOIs	https://doi.org/10.1063/1.90750
Publication status	Published - 1979

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ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Cite this

Chang, R. P. H., Coleman, J. J., Polak, A. J., Feldman, L. C., & Chang, C. C. (1979). Application of selective chemical reaction concept for controlling the properties of oxides on GaAs. Applied Physics Letters, 34(3), 237-238. https://doi.org/10.1063/1.90750

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10.1063/1.90750