Abstract
We demonstrate how GaAs can be selectively oxidized in a plasma to control the physical and chemical properties of the oxides. Electrical measurements indicate that charged traps can be removed.
Original language | English |
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Pages (from-to) | 237-238 |
Number of pages | 2 |
Journal | Applied Physics Letters |
Volume | 34 |
Issue number | 3 |
DOIs | |
Publication status | Published - 1979 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)