Abstract
We demonstrate how GaAs can be selectively oxidized in a plasma to control the physical and chemical properties of the oxides. Electrical measurements indicate that charged traps can be removed.
| Original language | English |
|---|---|
| Pages (from-to) | 237-238 |
| Number of pages | 2 |
| Journal | Applied Physics Letters |
| Volume | 34 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 1979 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
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Cite this
Chang, R. P. H., Coleman, J. J., Polak, A. J., Feldman, L. C., & Chang, C. C. (1979). Application of selective chemical reaction concept for controlling the properties of oxides on GaAs. Applied Physics Letters, 34(3), 237-238. https://doi.org/10.1063/1.90750