Application of selective chemical reaction concept for controlling the properties of oxides on GaAs

R. P.H. Chang, J. J. Coleman, A. J. Polak, L. C. Feldman, C. C. Chang

Research output: Contribution to journalArticlepeer-review

29 Citations (Scopus)

Abstract

We demonstrate how GaAs can be selectively oxidized in a plasma to control the physical and chemical properties of the oxides. Electrical measurements indicate that charged traps can be removed.

Original languageEnglish
Pages (from-to)237-238
Number of pages2
JournalApplied Physics Letters
Volume34
Issue number3
DOIs
Publication statusPublished - 1979

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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