Abstract
We demonstrate how GaAs can be selectively oxidized in a plasma to control the physical and chemical properties of the oxides. Electrical measurements indicate that charged traps can be removed.
| Original language | English |
|---|---|
| Pages (from-to) | 237-238 |
| Number of pages | 2 |
| Journal | Applied Physics Letters |
| Volume | 34 |
| Issue number | 3 |
| DOIs | |
| Publication status | Published - 1979 |
Fingerprint
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
Cite this
Application of selective chemical reaction concept for controlling the properties of oxides on GaAs. / Chang, Robert P. H.; Coleman, J. J.; Polak, A. J.; Feldman, Leonard C; Chang, C. C.
In: Applied Physics Letters, Vol. 34, No. 3, 1979, p. 237-238.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Application of selective chemical reaction concept for controlling the properties of oxides on GaAs
AU - Chang, Robert P. H.
AU - Coleman, J. J.
AU - Polak, A. J.
AU - Feldman, Leonard C
AU - Chang, C. C.
PY - 1979
Y1 - 1979
N2 - We demonstrate how GaAs can be selectively oxidized in a plasma to control the physical and chemical properties of the oxides. Electrical measurements indicate that charged traps can be removed.
AB - We demonstrate how GaAs can be selectively oxidized in a plasma to control the physical and chemical properties of the oxides. Electrical measurements indicate that charged traps can be removed.
UR - http://www.scopus.com/inward/record.url?scp=0010375028&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0010375028&partnerID=8YFLogxK
U2 - 10.1063/1.90750
DO - 10.1063/1.90750
M3 - Article
AN - SCOPUS:0010375028
VL - 34
SP - 237
EP - 238
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 3
ER -