Approach for efficiently locating and electrically contacting nanostructures fabricated via UHV-STM lithography on Si(100)

Mark C Hersam, G. C. Abeln, J. W. Lyding

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

The development of atomically precise UHV-STM nanofabrication of metallic, dielectric, and organic nanostructures on Si(100) surfaces has created new opportunities for realizing future nanoelectronic devices. Concomitant with these opportunities are the practical challenges of efficient location/registration of nanostructures and macroscopic-to-nanoscale electrical interfaces. In this paper, we present an approach utilizing p-n junctions to contact nanostructures. The junctions are located potentiometrically and are fully compatible with UHV experimental procedures.

Original languageEnglish
Pages (from-to)235-237
Number of pages3
JournalMicroelectronic Engineering
Volume47
Issue number1
DOIs
Publication statusPublished - Jun 1999

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nanofabrication
p-n junctions
Lithography
Nanostructures
lithography
Nanoelectronics
Nanotechnology

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics

Cite this

Approach for efficiently locating and electrically contacting nanostructures fabricated via UHV-STM lithography on Si(100). / Hersam, Mark C; Abeln, G. C.; Lyding, J. W.

In: Microelectronic Engineering, Vol. 47, No. 1, 06.1999, p. 235-237.

Research output: Contribution to journalArticle

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