Artificially atomic-scale ordered superlattice alloys for thermoelectric applications

S. Cho; Y. Kim; A. DiVenere; G. K L Wong; Arthur J Freeman; J. B. Ketterson; L. J. Olafsen; I. Vurgaftman; J. R. Meyer; C. A. Hoffman; G. Chen

Artificially atomic-scale ordered superlattice alloys for thermoelectric applications

S. Cho, Y. Kim, A. DiVenere, G. K L Wong, Arthur J Freeman, J. B. Ketterson, L. J. Olafsen, I. Vurgaftman, J. R. Meyer, C. A. Hoffman, G. Chen

Northwestern University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report artificially atomic-scale ordered superlattice alloy systems, new scheme to pursue high-zt materials. We have fabricated Bi/Sb superlattice alloys that are artificially ordered on the atomic scale using MBE, confirmed by the presence of XRD superlattice satellites. We have observed that the electronic structure can be modified from semimetal, through zero-gap, to semiconductor by changing the superlattice period and sublayer thicknesses using electrical resistivity, thermopower, and magneto-transport measurements. InSb/Bi superlattice alloys have also been prepared and studied using XRD and thermopower measurements, which shows that their thermoelectric transport properties can be modified in accordance with structural modification. This superlattice alloy scheme gives us one more tool to control and tune the electronic structure and consequently the thermoelectric properties.

Original language	English
Title of host publication	Proceedings - IEEE International Symposium on Circuits and Systems
Volume	4
Publication status	Published - 2001
Event	IEEE International Symposium on Circuits and Systems (ISCAS 2001) - Sydney, NSW, Australia Duration: May 6 2001 → May 9 2001

Other

Other	IEEE International Symposium on Circuits and Systems (ISCAS 2001)
Country	Australia
City	Sydney, NSW
Period	5/6/01 → 5/9/01

ASJC Scopus subject areas

Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials

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Artificially atomic-scale ordered superlattice alloys for thermoelectric applications. / Cho, S.; Kim, Y.; DiVenere, A.; Wong, G. K L; Freeman, Arthur J; Ketterson, J. B.; Olafsen, L. J.; Vurgaftman, I.; Meyer, J. R.; Hoffman, C. A.; Chen, G.

Proceedings - IEEE International Symposium on Circuits and Systems. Vol. 4 2001.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Cho, S, Kim, Y, DiVenere, A, Wong, GKL, Freeman, AJ, Ketterson, JB, Olafsen, LJ, Vurgaftman, I, Meyer, JR, Hoffman, CA & Chen, G 2001, Artificially atomic-scale ordered superlattice alloys for thermoelectric applications. in Proceedings - IEEE International Symposium on Circuits and Systems. vol. 4, IEEE International Symposium on Circuits and Systems (ISCAS 2001), Sydney, NSW, Australia, 5/6/01.

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title = "Artificially atomic-scale ordered superlattice alloys for thermoelectric applications",

abstract = "We report artificially atomic-scale ordered superlattice alloy systems, new scheme to pursue high-zt materials. We have fabricated Bi/Sb superlattice alloys that are artificially ordered on the atomic scale using MBE, confirmed by the presence of XRD superlattice satellites. We have observed that the electronic structure can be modified from semimetal, through zero-gap, to semiconductor by changing the superlattice period and sublayer thicknesses using electrical resistivity, thermopower, and magneto-transport measurements. InSb/Bi superlattice alloys have also been prepared and studied using XRD and thermopower measurements, which shows that their thermoelectric transport properties can be modified in accordance with structural modification. This superlattice alloy scheme gives us one more tool to control and tune the electronic structure and consequently the thermoelectric properties.",

author = "S. Cho and Y. Kim and A. DiVenere and Wong, {G. K L} and Freeman, {Arthur J} and Ketterson, {J. B.} and Olafsen, {L. J.} and I. Vurgaftman and Meyer, {J. R.} and Hoffman, {C. A.} and G. Chen",

year = "2001",

language = "English",

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note = "IEEE International Symposium on Circuits and Systems (ISCAS 2001) ; Conference date: 06-05-2001 Through 09-05-2001",

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AU - Cho, S.

AU - Kim, Y.

AU - DiVenere, A.

AU - Wong, G. K L

AU - Freeman, Arthur J

AU - Ketterson, J. B.

AU - Olafsen, L. J.

AU - Vurgaftman, I.

AU - Meyer, J. R.

AU - Hoffman, C. A.

AU - Chen, G.

PY - 2001

Y1 - 2001

N2 - We report artificially atomic-scale ordered superlattice alloy systems, new scheme to pursue high-zt materials. We have fabricated Bi/Sb superlattice alloys that are artificially ordered on the atomic scale using MBE, confirmed by the presence of XRD superlattice satellites. We have observed that the electronic structure can be modified from semimetal, through zero-gap, to semiconductor by changing the superlattice period and sublayer thicknesses using electrical resistivity, thermopower, and magneto-transport measurements. InSb/Bi superlattice alloys have also been prepared and studied using XRD and thermopower measurements, which shows that their thermoelectric transport properties can be modified in accordance with structural modification. This superlattice alloy scheme gives us one more tool to control and tune the electronic structure and consequently the thermoelectric properties.

AB - We report artificially atomic-scale ordered superlattice alloy systems, new scheme to pursue high-zt materials. We have fabricated Bi/Sb superlattice alloys that are artificially ordered on the atomic scale using MBE, confirmed by the presence of XRD superlattice satellites. We have observed that the electronic structure can be modified from semimetal, through zero-gap, to semiconductor by changing the superlattice period and sublayer thicknesses using electrical resistivity, thermopower, and magneto-transport measurements. InSb/Bi superlattice alloys have also been prepared and studied using XRD and thermopower measurements, which shows that their thermoelectric transport properties can be modified in accordance with structural modification. This superlattice alloy scheme gives us one more tool to control and tune the electronic structure and consequently the thermoelectric properties.

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