Abstract
We report artificially atomic-scale ordered superlattice alloy systems, new scheme to pursue high-zt materials. We have fabricated Bi/Sb superlattice alloys that are artificially ordered on the atomic scale using MBE, confirmed by the presence of XRD superlattice satellites. We have observed that the electronic structure can be modified from semimetal, through zero-gap, to semiconductor by changing the superlattice period and sublayer thicknesses using electrical resistivity, thermopower, and magneto-transport measurements. InSb/Bi superlattice alloys have also been prepared and studied using XRD and thermopower measurements, which shows that their thermoelectric transport properties can be modified in accordance with structural modification. This superlattice alloy scheme gives us one more tool to control and tune the electronic structure and consequently the thermoelectric properties.
| Original language | English |
|---|---|
| Title of host publication | Proceedings - IEEE International Symposium on Circuits and Systems |
| Volume | 4 |
| Publication status | Published - 2001 |
| Event | IEEE International Symposium on Circuits and Systems (ISCAS 2001) - Sydney, NSW, Australia Duration: May 6 2001 → May 9 2001 |
Other
| Other | IEEE International Symposium on Circuits and Systems (ISCAS 2001) |
|---|---|
| Country | Australia |
| City | Sydney, NSW |
| Period | 5/6/01 → 5/9/01 |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
Cite this
Artificially atomic-scale ordered superlattice alloys for thermoelectric applications. / Cho, S.; Kim, Y.; DiVenere, A.; Wong, G. K L; Freeman, Arthur J; Ketterson, J. B.; Olafsen, L. J.; Vurgaftman, I.; Meyer, J. R.; Hoffman, C. A.; Chen, G.
Proceedings - IEEE International Symposium on Circuits and Systems. Vol. 4 2001.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Artificially atomic-scale ordered superlattice alloys for thermoelectric applications
AU - Cho, S.
AU - Kim, Y.
AU - DiVenere, A.
AU - Wong, G. K L
AU - Freeman, Arthur J
AU - Ketterson, J. B.
AU - Olafsen, L. J.
AU - Vurgaftman, I.
AU - Meyer, J. R.
AU - Hoffman, C. A.
AU - Chen, G.
PY - 2001
Y1 - 2001
N2 - We report artificially atomic-scale ordered superlattice alloy systems, new scheme to pursue high-zt materials. We have fabricated Bi/Sb superlattice alloys that are artificially ordered on the atomic scale using MBE, confirmed by the presence of XRD superlattice satellites. We have observed that the electronic structure can be modified from semimetal, through zero-gap, to semiconductor by changing the superlattice period and sublayer thicknesses using electrical resistivity, thermopower, and magneto-transport measurements. InSb/Bi superlattice alloys have also been prepared and studied using XRD and thermopower measurements, which shows that their thermoelectric transport properties can be modified in accordance with structural modification. This superlattice alloy scheme gives us one more tool to control and tune the electronic structure and consequently the thermoelectric properties.
AB - We report artificially atomic-scale ordered superlattice alloy systems, new scheme to pursue high-zt materials. We have fabricated Bi/Sb superlattice alloys that are artificially ordered on the atomic scale using MBE, confirmed by the presence of XRD superlattice satellites. We have observed that the electronic structure can be modified from semimetal, through zero-gap, to semiconductor by changing the superlattice period and sublayer thicknesses using electrical resistivity, thermopower, and magneto-transport measurements. InSb/Bi superlattice alloys have also been prepared and studied using XRD and thermopower measurements, which shows that their thermoelectric transport properties can be modified in accordance with structural modification. This superlattice alloy scheme gives us one more tool to control and tune the electronic structure and consequently the thermoelectric properties.
UR - http://www.scopus.com/inward/record.url?scp=0035010230&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0035010230&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:0035010230
VL - 4
BT - Proceedings - IEEE International Symposium on Circuits and Systems
ER -