Artificially ordered BiSb alloys: Growth and transport properties

Sunglae Cho, Yunki Kim, Antonio DiVenere, George K L Wong, Arthur J Freeman, John B. Ketterson, Linda J. Olafsen, Igor Vurgaftman, Jerry R. Meyer, Craig A. Hoffman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We propose a new approach for potentially achieving high-ZT materials: artificially ordered alloy structures. We have prepared artificially ordered Bi/Sb alloys with different (Bi/Sb) periods from 7.7 angstroms to 55 angstroms by MBE. Atomic-scale ordering effects on the structural and transport properties have been studied. The formation of an ordered alloy was confirmed by the presence of XRD superlattice satellites. Using electrical resistivity, thermopower, and magneto-transport measurements, we have observed a semimetal-semiconductor transition in an ordered BiSb superlattice. The intentional ordering of the layered Bi-Sb structure has produced a new phase and the measured differences in the electronic spectrum relative to the random alloy are a consequence of its atomic structure.

Original languageEnglish
Title of host publicationInternational Conference on Thermoelectrics, ICT, Proceedings
PublisherIEEE
Pages104-107
Number of pages4
Publication statusPublished - 1999
Event18th International Conference on Thermoelectrics (ICT'99) - Baltimore, MD, USA
Duration: Aug 29 1999Sep 2 1999

Other

Other18th International Conference on Thermoelectrics (ICT'99)
CityBaltimore, MD, USA
Period8/29/999/2/99

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'Artificially ordered BiSb alloys: Growth and transport properties'. Together they form a unique fingerprint.

  • Cite this

    Cho, S., Kim, Y., DiVenere, A., Wong, G. K. L., Freeman, A. J., Ketterson, J. B., Olafsen, L. J., Vurgaftman, I., Meyer, J. R., & Hoffman, C. A. (1999). Artificially ordered BiSb alloys: Growth and transport properties. In International Conference on Thermoelectrics, ICT, Proceedings (pp. 104-107). IEEE.