Atomic displacements in the Si(111)-(7×7) surface

R. J. Culbertson, Leonard C Feldman, P. J. Silverman

Research output: Contribution to journalArticle

92 Citations (Scopus)

Abstract

The parallel and perpendicular displacements of atoms in the first few layers of Si(111)-(7×7) have been determined with use of ion scattering. It was directly observed that the major reconstruction of this surface involves 0.4 displacements perpendicular to the surface.

Original languageEnglish
Pages (from-to)2043-2046
Number of pages4
JournalPhysical Review Letters
Volume45
Issue number25
DOIs
Publication statusPublished - 1980

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ion scattering
atoms

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Atomic displacements in the Si(111)-(7×7) surface. / Culbertson, R. J.; Feldman, Leonard C; Silverman, P. J.

In: Physical Review Letters, Vol. 45, No. 25, 1980, p. 2043-2046.

Research output: Contribution to journalArticle

Culbertson, R. J. ; Feldman, Leonard C ; Silverman, P. J. / Atomic displacements in the Si(111)-(7×7) surface. In: Physical Review Letters. 1980 ; Vol. 45, No. 25. pp. 2043-2046.
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