Atomic displacements in the Si(111)-(7×7) surface

R. J. Culbertson, Leonard C Feldman, P. J. Silverman

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Abstract

The parallel and perpendicular displacements of atoms in the first few layers of Si(111)-(7×7) have been determined with use of ion scattering. It was directly observed that the major reconstruction of this surface involves 0.4 displacements perpendicular to the surface.

Original languageEnglish
Pages (from-to)2043-2046
Number of pages4
JournalPhysical Review Letters
Volume45
Issue number25
DOIs
Publication statusPublished - 1980

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

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