Atomic layer-controlled growth of transparent conducting ZnO on plastic substrates

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Abstract

Highly transparent (T>80%) and conductive (ρ approximately 10-3 cm) zinc oxide thin films were deposited by atomic layer-controlled growth on a wide variety of substrates, including glass sapphire and flexible polyethylene terephthalate (PET) at temperatures of 100-210 °C using diethylzinc (DEtZn) and water. This is the first example of atomic layer-controlled growth or atomic layer epitaxy on a polymer substrate. The growth was accomplished by separating the CVD reaction, Zn(CH2CH3)2+H2O→ZnO+2CH3CH3, into the following half reactions: (A) Zn-OH*+Zn(CH2CH3)2→Zn-O-Zn-CH2 CH3*+CH3CH3 (B) Zn-CH2CH3*+H2O→Zn-OH*+CH3CH3. The reactions were self-terminating and growth rates from 1.5-1.9 angstroms/cycle were observed. In order to grow films at higher temperatures and to improve film adhesion, alumina buffer layers were deposited before the ZnO films on PET substrates. The resistivity of the films improved by doping gallium into the films and with increasing temperature. The best film grown on PET had a resistivity of 1.4×10-3 Ωcm, while the best film grown on glass had a resistivity of 8×10-4 cm.

Original languageEnglish
Pages (from-to)132-138
Number of pages7
JournalMaterials Chemistry and Physics
Volume58
Issue number2
DOIs
Publication statusPublished - Mar 25 1999

Fingerprint

plastics
Plastics
conduction
Substrates
Polyethylene Terephthalates
polyethylene terephthalate
Polyethylene terephthalates
Aluminum Oxide
electrical resistivity
Atomic layer epitaxy
Zinc Oxide
Glass
Gallium
glass
Buffer layers
atomic layer epitaxy
Zinc oxide
stopping
Sapphire
zinc oxides

ASJC Scopus subject areas

  • Materials Chemistry

Cite this

Atomic layer-controlled growth of transparent conducting ZnO on plastic substrates. / Ott, A. W.; Chang, Robert P. H.

In: Materials Chemistry and Physics, Vol. 58, No. 2, 25.03.1999, p. 132-138.

Research output: Contribution to journalArticle

@article{5c8e72f4d0474eb39bcb281a3beacd35,
title = "Atomic layer-controlled growth of transparent conducting ZnO on plastic substrates",
abstract = "Highly transparent (T>80{\%}) and conductive (ρ approximately 10-3 cm) zinc oxide thin films were deposited by atomic layer-controlled growth on a wide variety of substrates, including glass sapphire and flexible polyethylene terephthalate (PET) at temperatures of 100-210 °C using diethylzinc (DEtZn) and water. This is the first example of atomic layer-controlled growth or atomic layer epitaxy on a polymer substrate. The growth was accomplished by separating the CVD reaction, Zn(CH2CH3)2+H2O→ZnO+2CH3CH3, into the following half reactions: (A) Zn-OH*+Zn(CH2CH3)2→Zn-O-Zn-CH2 CH3*+CH3CH3 (B) Zn-CH2CH3*+H2O→Zn-OH*+CH3CH3. The reactions were self-terminating and growth rates from 1.5-1.9 angstroms/cycle were observed. In order to grow films at higher temperatures and to improve film adhesion, alumina buffer layers were deposited before the ZnO films on PET substrates. The resistivity of the films improved by doping gallium into the films and with increasing temperature. The best film grown on PET had a resistivity of 1.4×10-3 Ωcm, while the best film grown on glass had a resistivity of 8×10-4 cm.",
author = "Ott, {A. W.} and Chang, {Robert P. H.}",
year = "1999",
month = "3",
day = "25",
doi = "10.1016/S0254-0584(98)00264-8",
language = "English",
volume = "58",
pages = "132--138",
journal = "Materials Chemistry and Physics",
issn = "0254-0584",
publisher = "Elsevier BV",
number = "2",

}

TY - JOUR

T1 - Atomic layer-controlled growth of transparent conducting ZnO on plastic substrates

AU - Ott, A. W.

AU - Chang, Robert P. H.

PY - 1999/3/25

Y1 - 1999/3/25

N2 - Highly transparent (T>80%) and conductive (ρ approximately 10-3 cm) zinc oxide thin films were deposited by atomic layer-controlled growth on a wide variety of substrates, including glass sapphire and flexible polyethylene terephthalate (PET) at temperatures of 100-210 °C using diethylzinc (DEtZn) and water. This is the first example of atomic layer-controlled growth or atomic layer epitaxy on a polymer substrate. The growth was accomplished by separating the CVD reaction, Zn(CH2CH3)2+H2O→ZnO+2CH3CH3, into the following half reactions: (A) Zn-OH*+Zn(CH2CH3)2→Zn-O-Zn-CH2 CH3*+CH3CH3 (B) Zn-CH2CH3*+H2O→Zn-OH*+CH3CH3. The reactions were self-terminating and growth rates from 1.5-1.9 angstroms/cycle were observed. In order to grow films at higher temperatures and to improve film adhesion, alumina buffer layers were deposited before the ZnO films on PET substrates. The resistivity of the films improved by doping gallium into the films and with increasing temperature. The best film grown on PET had a resistivity of 1.4×10-3 Ωcm, while the best film grown on glass had a resistivity of 8×10-4 cm.

AB - Highly transparent (T>80%) and conductive (ρ approximately 10-3 cm) zinc oxide thin films were deposited by atomic layer-controlled growth on a wide variety of substrates, including glass sapphire and flexible polyethylene terephthalate (PET) at temperatures of 100-210 °C using diethylzinc (DEtZn) and water. This is the first example of atomic layer-controlled growth or atomic layer epitaxy on a polymer substrate. The growth was accomplished by separating the CVD reaction, Zn(CH2CH3)2+H2O→ZnO+2CH3CH3, into the following half reactions: (A) Zn-OH*+Zn(CH2CH3)2→Zn-O-Zn-CH2 CH3*+CH3CH3 (B) Zn-CH2CH3*+H2O→Zn-OH*+CH3CH3. The reactions were self-terminating and growth rates from 1.5-1.9 angstroms/cycle were observed. In order to grow films at higher temperatures and to improve film adhesion, alumina buffer layers were deposited before the ZnO films on PET substrates. The resistivity of the films improved by doping gallium into the films and with increasing temperature. The best film grown on PET had a resistivity of 1.4×10-3 Ωcm, while the best film grown on glass had a resistivity of 8×10-4 cm.

UR - http://www.scopus.com/inward/record.url?scp=0345148449&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0345148449&partnerID=8YFLogxK

U2 - 10.1016/S0254-0584(98)00264-8

DO - 10.1016/S0254-0584(98)00264-8

M3 - Article

VL - 58

SP - 132

EP - 138

JO - Materials Chemistry and Physics

JF - Materials Chemistry and Physics

SN - 0254-0584

IS - 2

ER -