Atomic layer deposition of Cu(i) oxide films using Cu(II) bis(dimethylamino-2-propoxide) and water

J. R. Avila, A. W. Peters, Zhanyong Li, M. A. Ortuño, A. B.F. Martinson, C. J. Cramer, Joseph T Hupp, O. K. Farha

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Abstract

To grow films of Cu2O, bis-(dimethylamino-2-propoxide)Cu(II), or Cu(dmap), is used as an atomic layer deposition precursor using only water vapor as a co-reactant. Between 110 and 175 °C, a growth rate of 0.12 ± 0.02 Å per cycle was measured using an in situ quartz crystal microbalance (QCM). X-ray photoelectron spectroscopy (XPS) confirms the growth of metal-oxide films featuring Cu(i).

Original languageEnglish
Pages (from-to)5790-5795
Number of pages6
JournalDalton Transactions
Volume46
Issue number18
DOIs
Publication statusPublished - 2017

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ASJC Scopus subject areas

  • Inorganic Chemistry

Cite this

Avila, J. R., Peters, A. W., Li, Z., Ortuño, M. A., Martinson, A. B. F., Cramer, C. J., ... Farha, O. K. (2017). Atomic layer deposition of Cu(i) oxide films using Cu(II) bis(dimethylamino-2-propoxide) and water. Dalton Transactions, 46(18), 5790-5795. https://doi.org/10.1039/c6dt02572b