Atomic layer deposition of Cu(i) oxide films using Cu(II) bis(dimethylamino-2-propoxide) and water

J. R. Avila, A. W. Peters, Zhanyong Li, M. A. Ortuño, A. B.F. Martinson, C. J. Cramer, Joseph T Hupp, O. K. Farha

Research output: Contribution to journal › Article

8 Citations (Scopus)

Abstract

To grow films of Cu2O, bis-(dimethylamino-2-propoxide)Cu(II), or Cu(dmap), is used as an atomic layer deposition precursor using only water vapor as a co-reactant. Between 110 and 175 °C, a growth rate of 0.12 ± 0.02 Å per cycle was measured using an in situ quartz crystal microbalance (QCM). X-ray photoelectron spectroscopy (XPS) confirms the growth of metal-oxide films featuring Cu(i).

Original languageEnglish
Pages (from-to)5790-5795
Number of pages6
JournalDalton Transactions
Volume46
Issue number18
DOIs
Publication statusPublished - 2017

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Atomic layer deposition
Quartz crystal microbalances
Steam
Oxide films
X ray photoelectron spectroscopy
Metals
Water

ASJC Scopus subject areas

  • Inorganic Chemistry

Cite this

Avila, J. R., Peters, A. W., Li, Z., Ortuño, M. A., Martinson, A. B. F., Cramer, C. J., ... Farha, O. K. (2017). Atomic layer deposition of Cu(i) oxide films using Cu(II) bis(dimethylamino-2-propoxide) and water. Dalton Transactions, 46(18), 5790-5795. https://doi.org/10.1039/c6dt02572b

Atomic layer deposition of Cu(i) oxide films using Cu(II) bis(dimethylamino-2-propoxide) and water. / Avila, J. R.; Peters, A. W.; Li, Zhanyong; Ortuño, M. A.; Martinson, A. B.F.; Cramer, C. J.; Hupp, Joseph T; Farha, O. K.

In: Dalton Transactions, Vol. 46, No. 18, 2017, p. 5790-5795.

Research output: Contribution to journal › Article

Avila, JR, Peters, AW, Li, Z, Ortuño, MA, Martinson, ABF, Cramer, CJ, Hupp, JT & Farha, OK 2017, 'Atomic layer deposition of Cu(i) oxide films using Cu(II) bis(dimethylamino-2-propoxide) and water', Dalton Transactions, vol. 46, no. 18, pp. 5790-5795. https://doi.org/10.1039/c6dt02572b
Avila JR, Peters AW, Li Z, Ortuño MA, Martinson ABF, Cramer CJ et al. Atomic layer deposition of Cu(i) oxide films using Cu(II) bis(dimethylamino-2-propoxide) and water. Dalton Transactions. 2017;46(18):5790-5795. https://doi.org/10.1039/c6dt02572b
Avila, J. R. ; Peters, A. W. ; Li, Zhanyong ; Ortuño, M. A. ; Martinson, A. B.F. ; Cramer, C. J. ; Hupp, Joseph T ; Farha, O. K. / Atomic layer deposition of Cu(i) oxide films using Cu(II) bis(dimethylamino-2-propoxide) and water. In: Dalton Transactions. 2017 ; Vol. 46, No. 18. pp. 5790-5795.
@article{da2a2f5eec124c36814ea6469a92a050,
title = "Atomic layer deposition of Cu(i) oxide films using Cu(II) bis(dimethylamino-2-propoxide) and water",
abstract = "To grow films of Cu2O, bis-(dimethylamino-2-propoxide)Cu(II), or Cu(dmap), is used as an atomic layer deposition precursor using only water vapor as a co-reactant. Between 110 and 175 °C, a growth rate of 0.12 ± 0.02 {\AA} per cycle was measured using an in situ quartz crystal microbalance (QCM). X-ray photoelectron spectroscopy (XPS) confirms the growth of metal-oxide films featuring Cu(i).",
author = "Avila, {J. R.} and Peters, {A. W.} and Zhanyong Li and Ortu{\~n}o, {M. A.} and Martinson, {A. B.F.} and Cramer, {C. J.} and Hupp, {Joseph T} and Farha, {O. K.}",
year = "2017",
doi = "10.1039/c6dt02572b",
language = "English",
volume = "46",
pages = "5790--5795",
journal = "Dalton Transactions",
issn = "1477-9226",
publisher = "Royal Society of Chemistry",
number = "18",

}

TY - JOUR

T1 - Atomic layer deposition of Cu(i) oxide films using Cu(II) bis(dimethylamino-2-propoxide) and water

AU - Avila, J. R.

AU - Peters, A. W.

AU - Li, Zhanyong

AU - Ortuño, M. A.

AU - Martinson, A. B.F.

AU - Cramer, C. J.

AU - Hupp, Joseph T

AU - Farha, O. K.

PY - 2017

Y1 - 2017

N2 - To grow films of Cu2O, bis-(dimethylamino-2-propoxide)Cu(II), or Cu(dmap), is used as an atomic layer deposition precursor using only water vapor as a co-reactant. Between 110 and 175 °C, a growth rate of 0.12 ± 0.02 Å per cycle was measured using an in situ quartz crystal microbalance (QCM). X-ray photoelectron spectroscopy (XPS) confirms the growth of metal-oxide films featuring Cu(i).

AB - To grow films of Cu2O, bis-(dimethylamino-2-propoxide)Cu(II), or Cu(dmap), is used as an atomic layer deposition precursor using only water vapor as a co-reactant. Between 110 and 175 °C, a growth rate of 0.12 ± 0.02 Å per cycle was measured using an in situ quartz crystal microbalance (QCM). X-ray photoelectron spectroscopy (XPS) confirms the growth of metal-oxide films featuring Cu(i).

UR - http://www.scopus.com/inward/record.url?scp=85021745757&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85021745757&partnerID=8YFLogxK

U2 - 10.1039/c6dt02572b

DO - 10.1039/c6dt02572b

M3 - Article

VL - 46

SP - 5790

EP - 5795

JO - Dalton Transactions

JF - Dalton Transactions

SN - 1477-9226

IS - 18

ER -

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