Abstract
To grow films of Cu2O, bis-(dimethylamino-2-propoxide)Cu(II), or Cu(dmap), is used as an atomic layer deposition precursor using only water vapor as a co-reactant. Between 110 and 175 °C, a growth rate of 0.12 ± 0.02 Å per cycle was measured using an in situ quartz crystal microbalance (QCM). X-ray photoelectron spectroscopy (XPS) confirms the growth of metal-oxide films featuring Cu(i).
Original language | English |
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Pages (from-to) | 5790-5795 |
Number of pages | 6 |
Journal | Dalton Transactions |
Volume | 46 |
Issue number | 18 |
DOIs | |
Publication status | Published - 2017 |
ASJC Scopus subject areas
- Inorganic Chemistry