Atomic layer deposition of Cu(i) oxide films using Cu(II) bis(dimethylamino-2-propoxide) and water

J. R. Avila, A. W. Peters, Zhanyong Li, M. A. Ortuño, A. B.F. Martinson, C. J. Cramer, Joseph T Hupp, O. K. Farha

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

To grow films of Cu2O, bis-(dimethylamino-2-propoxide)Cu(II), or Cu(dmap), is used as an atomic layer deposition precursor using only water vapor as a co-reactant. Between 110 and 175 °C, a growth rate of 0.12 ± 0.02 Å per cycle was measured using an in situ quartz crystal microbalance (QCM). X-ray photoelectron spectroscopy (XPS) confirms the growth of metal-oxide films featuring Cu(i).

Original languageEnglish
Pages (from-to)5790-5795
Number of pages6
JournalDalton Transactions
Volume46
Issue number18
DOIs
Publication statusPublished - 2017

ASJC Scopus subject areas

  • Inorganic Chemistry

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    Avila, J. R., Peters, A. W., Li, Z., Ortuño, M. A., Martinson, A. B. F., Cramer, C. J., Hupp, J. T., & Farha, O. K. (2017). Atomic layer deposition of Cu(i) oxide films using Cu(II) bis(dimethylamino-2-propoxide) and water. Dalton Transactions, 46(18), 5790-5795. https://doi.org/10.1039/c6dt02572b