Atomic layer deposition of Cu(i) oxide films using Cu(II) bis(dimethylamino-2-propoxide) and water

J. R. Avila; A. W. Peters; Zhanyong Li; M. A. Ortuño; A. B.F. Martinson; C. J. Cramer; Joseph T Hupp; O. K. Farha

doi:10.1039/c6dt02572b

Atomic layer deposition of Cu(i) oxide films using Cu(II) bis(dimethylamino-2-propoxide) and water

J. R. Avila, A. W. Peters, Zhanyong Li, M. A. Ortuño, A. B.F. Martinson, C. J. Cramer, Joseph T Hupp, O. K. Farha

Northwestern University

Research output: Contribution to journal › Article

9 Citations (Scopus)

Abstract

To grow films of Cu₂O, bis-(dimethylamino-2-propoxide)Cu(II), or Cu(dmap), is used as an atomic layer deposition precursor using only water vapor as a co-reactant. Between 110 and 175 °C, a growth rate of 0.12 ± 0.02 Å per cycle was measured using an in situ quartz crystal microbalance (QCM). X-ray photoelectron spectroscopy (XPS) confirms the growth of metal-oxide films featuring Cu(i).

Original language	English
Pages (from-to)	5790-5795
Number of pages	6
Journal	Dalton Transactions
Volume	46
Issue number	18
DOIs	https://doi.org/10.1039/c6dt02572b
Publication status	Published - 2017

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ASJC Scopus subject areas

Inorganic Chemistry

Cite this

Avila, J. R., Peters, A. W., Li, Z., Ortuño, M. A., Martinson, A. B. F., Cramer, C. J., ... Farha, O. K. (2017). Atomic layer deposition of Cu(i) oxide films using Cu(II) bis(dimethylamino-2-propoxide) and water. Dalton Transactions, 46(18), 5790-5795. https://doi.org/10.1039/c6dt02572b

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AU - Li, Zhanyong

AU - Ortuño, M. A.

AU - Martinson, A. B.F.

AU - Cramer, C. J.

AU - Hupp, Joseph T

AU - Farha, O. K.

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AB - To grow films of Cu2O, bis-(dimethylamino-2-propoxide)Cu(II), or Cu(dmap), is used as an atomic layer deposition precursor using only water vapor as a co-reactant. Between 110 and 175 °C, a growth rate of 0.12 ± 0.02 Å per cycle was measured using an in situ quartz crystal microbalance (QCM). X-ray photoelectron spectroscopy (XPS) confirms the growth of metal-oxide films featuring Cu(i).

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10.1039/c6dt02572b