Abstract
Indium oxide (In 2O 3) forms the basis for an important class of transparent conducting oxides that see wide use in optoelectronic devices, flat-panel displays, and photovoltaics. Here we present a new method for depositing In 2O 3 thin films by atomic layer deposition (ALD) using alternating exposures to cyclopentadienyl indium and ozone. Using a precursor vaporization temperature of 40°C and deposition temperatures of 200-450°C, we measure growth rates of 1.3-2.0 Å/cycle. A significant advantage of this synthesis route over previous techniques is the ability to conformally coat porous materials such as anodic aluminum oxide membranes. The deposited films are nanocrystalline, cubic phase In 2O 3 and are highly transparent and conducting. In situ quadrupole mass spectrometry and quartz crystal microbalance measurements elucidate the details of the In 2O 3 growth mechanism.
| Original language | English |
|---|---|
| Pages (from-to) | 3571-3578 |
| Number of pages | 8 |
| Journal | Chemistry of Materials |
| Volume | 18 |
| Issue number | 15 |
| DOIs | |
| Publication status | Published - Jul 25 2006 |
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ASJC Scopus subject areas
- Materials Chemistry
- Materials Science(all)
Cite this
Atomic layer deposition of in 2O 3 using cyclopentadienyl indium : A new synthetic route to transparent conducting oxide films. / Elam, Jeffrey W.; Martinson, Alex B F; Pellin, Michael J.; Hupp, Joseph T.
In: Chemistry of Materials, Vol. 18, No. 15, 25.07.2006, p. 3571-3578.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Atomic layer deposition of in 2O 3 using cyclopentadienyl indium
T2 - A new synthetic route to transparent conducting oxide films
AU - Elam, Jeffrey W.
AU - Martinson, Alex B F
AU - Pellin, Michael J.
AU - Hupp, Joseph T
PY - 2006/7/25
Y1 - 2006/7/25
N2 - Indium oxide (In 2O 3) forms the basis for an important class of transparent conducting oxides that see wide use in optoelectronic devices, flat-panel displays, and photovoltaics. Here we present a new method for depositing In 2O 3 thin films by atomic layer deposition (ALD) using alternating exposures to cyclopentadienyl indium and ozone. Using a precursor vaporization temperature of 40°C and deposition temperatures of 200-450°C, we measure growth rates of 1.3-2.0 Å/cycle. A significant advantage of this synthesis route over previous techniques is the ability to conformally coat porous materials such as anodic aluminum oxide membranes. The deposited films are nanocrystalline, cubic phase In 2O 3 and are highly transparent and conducting. In situ quadrupole mass spectrometry and quartz crystal microbalance measurements elucidate the details of the In 2O 3 growth mechanism.
AB - Indium oxide (In 2O 3) forms the basis for an important class of transparent conducting oxides that see wide use in optoelectronic devices, flat-panel displays, and photovoltaics. Here we present a new method for depositing In 2O 3 thin films by atomic layer deposition (ALD) using alternating exposures to cyclopentadienyl indium and ozone. Using a precursor vaporization temperature of 40°C and deposition temperatures of 200-450°C, we measure growth rates of 1.3-2.0 Å/cycle. A significant advantage of this synthesis route over previous techniques is the ability to conformally coat porous materials such as anodic aluminum oxide membranes. The deposited films are nanocrystalline, cubic phase In 2O 3 and are highly transparent and conducting. In situ quadrupole mass spectrometry and quartz crystal microbalance measurements elucidate the details of the In 2O 3 growth mechanism.
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U2 - 10.1021/cm060754y
DO - 10.1021/cm060754y
M3 - Article
VL - 18
SP - 3571
EP - 3578
JO - Chemistry of Materials
JF - Chemistry of Materials
SN - 0897-4756
IS - 15
ER -