Atomic layer deposition of in 2O 3 using cyclopentadienyl indium: A new synthetic route to transparent conducting oxide films

Jeffrey W. Elam, Alex B.F. Martinson, Michael J. Pellin, Joseph T. Hupp

Research output: Contribution to journalArticle

86 Citations (Scopus)

Abstract

Indium oxide (In 2O 3) forms the basis for an important class of transparent conducting oxides that see wide use in optoelectronic devices, flat-panel displays, and photovoltaics. Here we present a new method for depositing In 2O 3 thin films by atomic layer deposition (ALD) using alternating exposures to cyclopentadienyl indium and ozone. Using a precursor vaporization temperature of 40°C and deposition temperatures of 200-450°C, we measure growth rates of 1.3-2.0 Å/cycle. A significant advantage of this synthesis route over previous techniques is the ability to conformally coat porous materials such as anodic aluminum oxide membranes. The deposited films are nanocrystalline, cubic phase In 2O 3 and are highly transparent and conducting. In situ quadrupole mass spectrometry and quartz crystal microbalance measurements elucidate the details of the In 2O 3 growth mechanism.

Original languageEnglish
Pages (from-to)3571-3578
Number of pages8
JournalChemistry of Materials
Volume18
Issue number15
DOIs
Publication statusPublished - Jul 25 2006

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

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