Atomic Layer Deposition of Molybdenum Oxides with Tunable Stoichiometry Enables Controllable Doping of MoS2

Michael J. Moody, Alex Henning, Titel Jurca, Ju Ying Shang, Hadallia Bergeron, Itamar Balla, Jack N. Lding, Emily A Weiss, Mark C Hersam, Tracy L. Lohr, Tobin J Marks, Lincoln J. Lauhon

Research output: Contribution to journal › Article

3 Citations (Scopus)
Original languageEnglish
Pages (from-to)3628-3632
Number of pages5
JournalChemistry of Materials
Volume30
Issue number11
DOIs
Publication statusPublished - Jun 12 2018

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Semiconductor doping
Molybdenum oxide
Sulfur Compounds
Van der Waals forces
Atomic layer deposition
Field effect transistors
Stoichiometry
Electronic properties
Oxides
Oxide films
Carrier concentration
Metals
Doping (additives)
Molybdenum
Optical band gaps
Thin film transistors
Threshold voltage
Hysteresis
Etching
Transistors

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

Cite this

Moody, M. J., Henning, A., Jurca, T., Shang, J. Y., Bergeron, H., Balla, I., ... Lauhon, L. J. (2018). Atomic Layer Deposition of Molybdenum Oxides with Tunable Stoichiometry Enables Controllable Doping of MoS2. Chemistry of Materials, 30(11), 3628-3632. https://doi.org/10.1021/acs.chemmater.8b01171

Atomic Layer Deposition of Molybdenum Oxides with Tunable Stoichiometry Enables Controllable Doping of MoS2. / Moody, Michael J.; Henning, Alex; Jurca, Titel; Shang, Ju Ying; Bergeron, Hadallia; Balla, Itamar; Lding, Jack N.; Weiss, Emily A; Hersam, Mark C; Lohr, Tracy L.; Marks, Tobin J; Lauhon, Lincoln J.

In: Chemistry of Materials, Vol. 30, No. 11, 12.06.2018, p. 3628-3632.

Research output: Contribution to journal › Article

Moody, MJ, Henning, A, Jurca, T, Shang, JY, Bergeron, H, Balla, I, Lding, JN, Weiss, EA, Hersam, MC, Lohr, TL, Marks, TJ & Lauhon, LJ 2018, 'Atomic Layer Deposition of Molybdenum Oxides with Tunable Stoichiometry Enables Controllable Doping of MoS2', Chemistry of Materials, vol. 30, no. 11, pp. 3628-3632. https://doi.org/10.1021/acs.chemmater.8b01171
Moody MJ, Henning A, Jurca T, Shang JY, Bergeron H, Balla I et al. Atomic Layer Deposition of Molybdenum Oxides with Tunable Stoichiometry Enables Controllable Doping of MoS2. Chemistry of Materials. 2018 Jun 12;30(11):3628-3632. https://doi.org/10.1021/acs.chemmater.8b01171
Moody, Michael J. ; Henning, Alex ; Jurca, Titel ; Shang, Ju Ying ; Bergeron, Hadallia ; Balla, Itamar ; Lding, Jack N. ; Weiss, Emily A ; Hersam, Mark C ; Lohr, Tracy L. ; Marks, Tobin J ; Lauhon, Lincoln J. / Atomic Layer Deposition of Molybdenum Oxides with Tunable Stoichiometry Enables Controllable Doping of MoS2. In: Chemistry of Materials. 2018 ; Vol. 30, No. 11. pp. 3628-3632.
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