Atomic Layer Deposition of Molybdenum Oxides with Tunable Stoichiometry Enables Controllable Doping of MoS2

Michael J. Moody; Alex Henning; Titel Jurca; Ju Ying Shang; Hadallia Bergeron; Itamar Balla; Jack N. Lding; Emily A. Weiss; Mark C. Hersam; Tracy L. Lohr; Tobin J. Marks; Lincoln J. Lauhon

doi:10.1021/acs.chemmater.8b01171

Atomic Layer Deposition of Molybdenum Oxides with Tunable Stoichiometry Enables Controllable Doping of MoS₂

Michael J. Moody, Alex Henning, Titel Jurca, Ju Ying Shang, Hadallia Bergeron, Itamar Balla, Jack N. Lding, Emily A. Weiss, Mark C. Hersam, Tracy L. Lohr, Tobin J. Marks, Lincoln J. Lauhon

Northwestern University

Research output: Contribution to journal › Article

7 Citations (Scopus)

Abstract

A study demonstrates two new low-temperature atomic layer deposition (ALD) processes and use them to deposit molybdenum oxides with controlled molybdenum oxidation states. The optical bandgaps and resistivities increase with increasing oxygen content, following the same trends as crystalline molybdenum oxides. The study dopes MoS₂ by depositing a MoO_x overlayer and tune the threshold voltage shift in thin film transistors (TFTs) from positive (p-type) to negative (n-type) by tuning the oxide composition. Low hysteresis in sweeps of the transistor gate voltage, an absence of strain, and reversibility upon oxide etching together suggest that this process maintains the van der Waals interface without significant chemical changes, and should be applicable as a doping strategy for 2D systems.

Original language	English
Pages (from-to)	3628-3632
Number of pages	5
Journal	Chemistry of Materials
Volume	30
Issue number	11
DOIs	https://doi.org/10.1021/acs.chemmater.8b01171
Publication status	Published - Jun 12 2018

ASJC Scopus subject areas

Chemistry(all)
Chemical Engineering(all)
Materials Chemistry

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Moody, M. J., Henning, A., Jurca, T., Shang, J. Y., Bergeron, H., Balla, I., Lding, J. N., Weiss, E. A., Hersam, M. C., Lohr, T. L., Marks, T. J., & Lauhon, L. J. (2018). Atomic Layer Deposition of Molybdenum Oxides with Tunable Stoichiometry Enables Controllable Doping of MoS₂ Chemistry of Materials, 30(11), 3628-3632. https://doi.org/10.1021/acs.chemmater.8b01171

Atomic Layer Deposition of Molybdenum Oxides with Tunable Stoichiometry Enables Controllable Doping of MoS₂ . / Moody, Michael J.; Henning, Alex; Jurca, Titel; Shang, Ju Ying; Bergeron, Hadallia; Balla, Itamar; Lding, Jack N.; Weiss, Emily A.; Hersam, Mark C.; Lohr, Tracy L.; Marks, Tobin J.; Lauhon, Lincoln J.

In: Chemistry of Materials, Vol. 30, No. 11, 12.06.2018, p. 3628-3632.

Research output: Contribution to journal › Article

Moody, MJ, Henning, A, Jurca, T, Shang, JY, Bergeron, H, Balla, I, Lding, JN, Weiss, EA , Hersam, MC, Lohr, TL, Marks, TJ & Lauhon, LJ 2018, 'Atomic Layer Deposition of Molybdenum Oxides with Tunable Stoichiometry Enables Controllable Doping of MoS₂ ', Chemistry of Materials, vol. 30, no. 11, pp. 3628-3632. https://doi.org/10.1021/acs.chemmater.8b01171

Moody, Michael J. ; Henning, Alex ; Jurca, Titel ; Shang, Ju Ying ; Bergeron, Hadallia ; Balla, Itamar ; Lding, Jack N. ; Weiss, Emily A. ; Hersam, Mark C. ; Lohr, Tracy L. ; Marks, Tobin J. ; Lauhon, Lincoln J. / Atomic Layer Deposition of Molybdenum Oxides with Tunable Stoichiometry Enables Controllable Doping of MoS₂ In: Chemistry of Materials. 2018 ; Vol. 30, No. 11. pp. 3628-3632.

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abstract = "A study demonstrates two new low-temperature atomic layer deposition (ALD) processes and use them to deposit molybdenum oxides with controlled molybdenum oxidation states. The optical bandgaps and resistivities increase with increasing oxygen content, following the same trends as crystalline molybdenum oxides. The study dopes MoS2 by depositing a MoOx overlayer and tune the threshold voltage shift in thin film transistors (TFTs) from positive (p-type) to negative (n-type) by tuning the oxide composition. Low hysteresis in sweeps of the transistor gate voltage, an absence of strain, and reversibility upon oxide etching together suggest that this process maintains the van der Waals interface without significant chemical changes, and should be applicable as a doping strategy for 2D systems.",

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