Atomic Layer Deposition of Molybdenum Oxides with Tunable Stoichiometry Enables Controllable Doping of MoS2

Michael J. Moody, Alex Henning, Titel Jurca, Ju Ying Shang, Hadallia Bergeron, Itamar Balla, Jack N. Lding, Emily A Weiss, Mark C Hersam, Tracy L. Lohr, Tobin J Marks, Lincoln J. Lauhon

Research output: Contribution to journalArticle

3 Citations (Scopus)
Original languageEnglish
Pages (from-to)3628-3632
Number of pages5
JournalChemistry of Materials
Volume30
Issue number11
DOIs
Publication statusPublished - Jun 12 2018

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Semiconductor doping
Molybdenum oxide
Sulfur Compounds
Van der Waals forces
Atomic layer deposition
Field effect transistors
Stoichiometry
Electronic properties
Oxides
Oxide films
Carrier concentration
Metals
Doping (additives)
Molybdenum
Optical band gaps
Thin film transistors
Threshold voltage
Hysteresis
Etching
Transistors

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

Cite this

Moody, M. J., Henning, A., Jurca, T., Shang, J. Y., Bergeron, H., Balla, I., ... Lauhon, L. J. (2018). Atomic Layer Deposition of Molybdenum Oxides with Tunable Stoichiometry Enables Controllable Doping of MoS2. Chemistry of Materials, 30(11), 3628-3632. https://doi.org/10.1021/acs.chemmater.8b01171

Atomic Layer Deposition of Molybdenum Oxides with Tunable Stoichiometry Enables Controllable Doping of MoS2. / Moody, Michael J.; Henning, Alex; Jurca, Titel; Shang, Ju Ying; Bergeron, Hadallia; Balla, Itamar; Lding, Jack N.; Weiss, Emily A; Hersam, Mark C; Lohr, Tracy L.; Marks, Tobin J; Lauhon, Lincoln J.

In: Chemistry of Materials, Vol. 30, No. 11, 12.06.2018, p. 3628-3632.

Research output: Contribution to journalArticle

Moody, MJ, Henning, A, Jurca, T, Shang, JY, Bergeron, H, Balla, I, Lding, JN, Weiss, EA, Hersam, MC, Lohr, TL, Marks, TJ & Lauhon, LJ 2018, 'Atomic Layer Deposition of Molybdenum Oxides with Tunable Stoichiometry Enables Controllable Doping of MoS2', Chemistry of Materials, vol. 30, no. 11, pp. 3628-3632. https://doi.org/10.1021/acs.chemmater.8b01171
Moody, Michael J. ; Henning, Alex ; Jurca, Titel ; Shang, Ju Ying ; Bergeron, Hadallia ; Balla, Itamar ; Lding, Jack N. ; Weiss, Emily A ; Hersam, Mark C ; Lohr, Tracy L. ; Marks, Tobin J ; Lauhon, Lincoln J. / Atomic Layer Deposition of Molybdenum Oxides with Tunable Stoichiometry Enables Controllable Doping of MoS2. In: Chemistry of Materials. 2018 ; Vol. 30, No. 11. pp. 3628-3632.
@article{6e8f9d63158f4c56bfc3ee0449fb0cef,
title = "Atomic Layer Deposition of Molybdenum Oxides with Tunable Stoichiometry Enables Controllable Doping of MoS2",
author = "Moody, {Michael J.} and Alex Henning and Titel Jurca and Shang, {Ju Ying} and Hadallia Bergeron and Itamar Balla and Lding, {Jack N.} and Weiss, {Emily A} and Hersam, {Mark C} and Lohr, {Tracy L.} and Marks, {Tobin J} and Lauhon, {Lincoln J.}",
year = "2018",
month = "6",
day = "12",
doi = "10.1021/acs.chemmater.8b01171",
language = "English",
volume = "30",
pages = "3628--3632",
journal = "Chemistry of Materials",
issn = "0897-4756",
publisher = "American Chemical Society",
number = "11",

}

TY - JOUR

T1 - Atomic Layer Deposition of Molybdenum Oxides with Tunable Stoichiometry Enables Controllable Doping of MoS2

AU - Moody, Michael J.

AU - Henning, Alex

AU - Jurca, Titel

AU - Shang, Ju Ying

AU - Bergeron, Hadallia

AU - Balla, Itamar

AU - Lding, Jack N.

AU - Weiss, Emily A

AU - Hersam, Mark C

AU - Lohr, Tracy L.

AU - Marks, Tobin J

AU - Lauhon, Lincoln J.

PY - 2018/6/12

Y1 - 2018/6/12

UR - http://www.scopus.com/inward/record.url?scp=85047413088&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85047413088&partnerID=8YFLogxK

U2 - 10.1021/acs.chemmater.8b01171

DO - 10.1021/acs.chemmater.8b01171

M3 - Article

AN - SCOPUS:85047413088

VL - 30

SP - 3628

EP - 3632

JO - Chemistry of Materials

JF - Chemistry of Materials

SN - 0897-4756

IS - 11

ER -