Atomic Layer Deposition of Molybdenum Oxides with Tunable Stoichiometry Enables Controllable Doping of MoS2

Michael J. Moody, Alex Henning, Titel Jurca, Ju Ying Shang, Hadallia Bergeron, Itamar Balla, Jack N. Lding, Emily A. Weiss, Mark C. Hersam, Tracy L. Lohr, Tobin J. Marks, Lincoln J. Lauhon

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7 Citations (Scopus)

Abstract

A study demonstrates two new low-temperature atomic layer deposition (ALD) processes and use them to deposit molybdenum oxides with controlled molybdenum oxidation states. The optical bandgaps and resistivities increase with increasing oxygen content, following the same trends as crystalline molybdenum oxides. The study dopes MoS2 by depositing a MoOx overlayer and tune the threshold voltage shift in thin film transistors (TFTs) from positive (p-type) to negative (n-type) by tuning the oxide composition. Low hysteresis in sweeps of the transistor gate voltage, an absence of strain, and reversibility upon oxide etching together suggest that this process maintains the van der Waals interface without significant chemical changes, and should be applicable as a doping strategy for 2D systems.

Original languageEnglish
Pages (from-to)3628-3632
Number of pages5
JournalChemistry of Materials
Volume30
Issue number11
DOIs
Publication statusPublished - Jun 12 2018

ASJC Scopus subject areas

  • Chemistry(all)
  • Chemical Engineering(all)
  • Materials Chemistry

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    Moody, M. J., Henning, A., Jurca, T., Shang, J. Y., Bergeron, H., Balla, I., Lding, J. N., Weiss, E. A., Hersam, M. C., Lohr, T. L., Marks, T. J., & Lauhon, L. J. (2018). Atomic Layer Deposition of Molybdenum Oxides with Tunable Stoichiometry Enables Controllable Doping of MoS2 Chemistry of Materials, 30(11), 3628-3632. https://doi.org/10.1021/acs.chemmater.8b01171