Atomic Layer Deposition of Rhenium-Aluminum Oxide Thin Films and ReOx Incorporation in a Metal-Organic Framework

Martino Rimoldi, Joseph T Hupp, Omar K. Farha

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

Methyltrioxorhenium (ReO3Me) is introduced as the first rhenium atomic layer deposition (ALD) precursor and used to grow rhenium-aluminum oxide thin films in combination with trimethylaluminum (TMA-AlMe3). The growth rate of the smooth Re-Al oxide films, with general stoichiometry RexAlyO3x, has been monitored by in situ quartz crystal microbalance (QCM) and ex situ ellipsometry, and found to be 3.2 Å/cycle. X-ray photoelectron spectroscopy (XPS) revealed the mixed valent composition of the film with Re(III) species being the main component. In addition, ReO3Me has been successfully used to deposit rhenium oxide in NU-1000, a mesoporous zirconium-based metal-organic framework (MOF). The metalated MOF was found to retain porosity and crystallinity and to be catalytically active for ethene hydrogenation.

Original languageEnglish
Pages (from-to)35067-35074
Number of pages8
JournalACS Applied Materials and Interfaces
Volume9
Issue number40
DOIs
Publication statusPublished - Oct 11 2017

Keywords

  • atomic layer deposition
  • gas flow
  • hydrogenation
  • metal-organic framework
  • rhenium oxide
  • thin film
  • trimethylaluminum

ASJC Scopus subject areas

  • Materials Science(all)

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