Atomic layer deposition of tin oxide films using tetrakis(dimethylamino) tin

Jeffrey W. Elam, David A. Baker, Alexander J. Hryn, Alex B F Martinson, Michael J. Pellin, Joseph T Hupp

Research output: Contribution to journalArticle

97 Citations (Scopus)

Abstract

The authors present a new method for preparing thin films of Sn O2 by atomic layer deposition (ALD) using alternating exposures to tetrakis(dimethylamino) tin and hydrogen peroxide. This method avoids problems of corrosion and agglomeration associated with the halogenated compound, Sn Cl4. Tin oxide films were successfully deposited on a variety of substrates using deposition temperatures of 50-300 °C at an average growth rate of 1.2 Åcycle. They use in situ quartz crystal microbalance and quadrupole mass spectrometry measurements to explore the mechanism for Sn O2 ALD. Scanning electron microscopy of Sn O2 films deposited on Si(100) show that the Sn O2 films are smooth, conformal, and nearly featureless, while atomic force microscopy yields a surface roughness of only 0.84 nm for a film with a thickness of 92 nm. X-ray diffraction reveals that the Sn O2 films are amorphous. Films deposited on glass yielded a resistivity of ∼0.3 cm and an optical transmission of 94% for a film thickness of 140 nm. X-ray photoelectron spectroscopy measurements were consistent with residual dimethylamine ligands remaining in the film at deposition temperatures below 150 °C. This method allows, for the first time, low temperature (50 °C) growth of Sn O2 films by ALD. Additionally, they show that this process is suitable for conformally coating high aspect ratio anodic alumina membranes.

Original languageEnglish
Pages (from-to)244-252
Number of pages9
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume26
Issue number2
DOIs
Publication statusPublished - 2008

Fingerprint

Tin
Atomic layer deposition
atomic layer epitaxy
Tin oxides
tin oxides
Oxide films
oxide films
tin
Aluminum Oxide
Quartz crystal microbalances
Amorphous films
Light transmission
Hydrogen peroxide
Temperature
Hydrogen Peroxide
peroxides
Mass spectrometry
Film thickness
agglomeration
stannic oxide

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

Atomic layer deposition of tin oxide films using tetrakis(dimethylamino) tin. / Elam, Jeffrey W.; Baker, David A.; Hryn, Alexander J.; Martinson, Alex B F; Pellin, Michael J.; Hupp, Joseph T.

In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 26, No. 2, 2008, p. 244-252.

Research output: Contribution to journalArticle

Elam, Jeffrey W. ; Baker, David A. ; Hryn, Alexander J. ; Martinson, Alex B F ; Pellin, Michael J. ; Hupp, Joseph T. / Atomic layer deposition of tin oxide films using tetrakis(dimethylamino) tin. In: Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films. 2008 ; Vol. 26, No. 2. pp. 244-252.
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