Atomic-level robustness of the Si(100)-2×1

H surface following liquid phase chemical treatments in atmospheric pressure environments

A. S. Baluch, N. P. Guisinger, R. Basu, E. T. Foley, Mark C Hersam

Research output: Contribution to journalArticle

18 Citations (Scopus)

Abstract

The robustness of the in situ prepared Si(100)-2×1:H surface followed by liquid phase chemical processing under atmospheric pressure conditions was analyzed. Directly interfaced nitrogen glovebox permitted combined UHV and ambient processing without exposing pristine H-passivated surface to ambient air. The hydrogen passivation remained largely intact after treatments in toluene and dichloromethane which was revealed by atomic resolution scanning tunneling microscope (STM) images. The results show that liquid phase processing of monohydride Si(100) surface with minimal perturbation at atomic scale enables innovative surface treatments with potential applications in silicon microelectronics and nanofabrication.

Original languageEnglish
JournalJournal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume22
Issue number3
DOIs
Publication statusPublished - May 2004

Fingerprint

Atmospheric pressure
atmospheric pressure
liquid phases
Liquids
gloveboxes
Processing
Hydrogen
nanofabrication
Methylene Chloride
Dichloromethane
Toluene
Silicon
surface treatment
Nanotechnology
Passivation
microelectronics
Microelectronics
passivity
Surface treatment
toluene

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

@article{3ed349d0907142afb0bf79abc9937ce3,
title = "Atomic-level robustness of the Si(100)-2×1: H surface following liquid phase chemical treatments in atmospheric pressure environments",
abstract = "The robustness of the in situ prepared Si(100)-2×1:H surface followed by liquid phase chemical processing under atmospheric pressure conditions was analyzed. Directly interfaced nitrogen glovebox permitted combined UHV and ambient processing without exposing pristine H-passivated surface to ambient air. The hydrogen passivation remained largely intact after treatments in toluene and dichloromethane which was revealed by atomic resolution scanning tunneling microscope (STM) images. The results show that liquid phase processing of monohydride Si(100) surface with minimal perturbation at atomic scale enables innovative surface treatments with potential applications in silicon microelectronics and nanofabrication.",
author = "Baluch, {A. S.} and Guisinger, {N. P.} and R. Basu and Foley, {E. T.} and Hersam, {Mark C}",
year = "2004",
month = "5",
doi = "10.1116/1.1722203",
language = "English",
volume = "22",
journal = "Journal of Vacuum Science and Technology A",
issn = "0734-2101",
publisher = "AVS Science and Technology Society",
number = "3",

}

TY - JOUR

T1 - Atomic-level robustness of the Si(100)-2×1

T2 - H surface following liquid phase chemical treatments in atmospheric pressure environments

AU - Baluch, A. S.

AU - Guisinger, N. P.

AU - Basu, R.

AU - Foley, E. T.

AU - Hersam, Mark C

PY - 2004/5

Y1 - 2004/5

N2 - The robustness of the in situ prepared Si(100)-2×1:H surface followed by liquid phase chemical processing under atmospheric pressure conditions was analyzed. Directly interfaced nitrogen glovebox permitted combined UHV and ambient processing without exposing pristine H-passivated surface to ambient air. The hydrogen passivation remained largely intact after treatments in toluene and dichloromethane which was revealed by atomic resolution scanning tunneling microscope (STM) images. The results show that liquid phase processing of monohydride Si(100) surface with minimal perturbation at atomic scale enables innovative surface treatments with potential applications in silicon microelectronics and nanofabrication.

AB - The robustness of the in situ prepared Si(100)-2×1:H surface followed by liquid phase chemical processing under atmospheric pressure conditions was analyzed. Directly interfaced nitrogen glovebox permitted combined UHV and ambient processing without exposing pristine H-passivated surface to ambient air. The hydrogen passivation remained largely intact after treatments in toluene and dichloromethane which was revealed by atomic resolution scanning tunneling microscope (STM) images. The results show that liquid phase processing of monohydride Si(100) surface with minimal perturbation at atomic scale enables innovative surface treatments with potential applications in silicon microelectronics and nanofabrication.

UR - http://www.scopus.com/inward/record.url?scp=3142596399&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3142596399&partnerID=8YFLogxK

U2 - 10.1116/1.1722203

DO - 10.1116/1.1722203

M3 - Article

VL - 22

JO - Journal of Vacuum Science and Technology A

JF - Journal of Vacuum Science and Technology A

SN - 0734-2101

IS - 3

ER -