Atomic-level study of the robustness of the Si(100)-2X1: H surface following exposure to ambient conditions

Mark C Hersam, N. P. Guisinger, J. W. Lyding, D. S. Thompson, J. S. Moore

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

The in situ hydrogen-passivated Si(100)-2X1 surface is characterized with x-ray photoelectron spectroscopy (XPS) and ultra-high-vacuum scanning tunneling microscopy (STM) following exposure to ambient conditions. The XPS measurements illustrate the chemical inertness of this surface as the onset of oxidation is not observed for the first 40 h of ambient exposure. After 15 min of contact with atmospheric conditions, the STM images reveal that the Si(100)-2X1:H surface remains atomically pristine. This exceptional stability is of relevance to a wide variety of applications that require ultrapure Si(100) substrates (e.g., microelectronics, semiconductor processing, nanofabrication, etc.).

Original languageEnglish
Pages (from-to)886-888
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number7
DOIs
Publication statusPublished - Feb 12 2001

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x ray spectroscopy
scanning tunneling microscopy
photoelectron spectroscopy
nanofabrication
meteorology
microelectronics
ultrahigh vacuum
oxidation
hydrogen

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Atomic-level study of the robustness of the Si(100)-2X1 : H surface following exposure to ambient conditions. / Hersam, Mark C; Guisinger, N. P.; Lyding, J. W.; Thompson, D. S.; Moore, J. S.

In: Applied Physics Letters, Vol. 78, No. 7, 12.02.2001, p. 886-888.

Research output: Contribution to journalArticle

Hersam, Mark C ; Guisinger, N. P. ; Lyding, J. W. ; Thompson, D. S. ; Moore, J. S. / Atomic-level study of the robustness of the Si(100)-2X1 : H surface following exposure to ambient conditions. In: Applied Physics Letters. 2001 ; Vol. 78, No. 7. pp. 886-888.
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