Abstract
Novel semiconductors with tailored properties can be designed theoretically based on our understanding of the interplay of atomic and electronic structures and the nature of the electronic states near the band-gap region. We discuss here the realization of this idea in Ag-Sb-based ternary chalcogenides, which are important optical phase change and thermoelectric materials. Based on our studies we propose new systems for high-performance thermoelectrics.
| Original language | English |
|---|---|
| Article number | 156403 |
| Journal | Physical Review Letters |
| Volume | 99 |
| Issue number | 15 |
| DOIs | |
| Publication status | Published - Oct 9 2007 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Atomic ordering and gap formation in Ag-Sb-based ternary chalcogenides. / Hoang, Khang; Mahanti, S. D.; Salvador, James R.; Kanatzidis, Mercouri G.
In: Physical Review Letters, Vol. 99, No. 15, 156403, 09.10.2007.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Atomic ordering and gap formation in Ag-Sb-based ternary chalcogenides
AU - Hoang, Khang
AU - Mahanti, S. D.
AU - Salvador, James R.
AU - Kanatzidis, Mercouri G
PY - 2007/10/9
Y1 - 2007/10/9
N2 - Novel semiconductors with tailored properties can be designed theoretically based on our understanding of the interplay of atomic and electronic structures and the nature of the electronic states near the band-gap region. We discuss here the realization of this idea in Ag-Sb-based ternary chalcogenides, which are important optical phase change and thermoelectric materials. Based on our studies we propose new systems for high-performance thermoelectrics.
AB - Novel semiconductors with tailored properties can be designed theoretically based on our understanding of the interplay of atomic and electronic structures and the nature of the electronic states near the band-gap region. We discuss here the realization of this idea in Ag-Sb-based ternary chalcogenides, which are important optical phase change and thermoelectric materials. Based on our studies we propose new systems for high-performance thermoelectrics.
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U2 - 10.1103/PhysRevLett.99.156403
DO - 10.1103/PhysRevLett.99.156403
M3 - Article
VL - 99
JO - Physical Review Letters
JF - Physical Review Letters
SN - 0031-9007
IS - 15
M1 - 156403
ER -