Atomic ordering and gap formation in Ag-Sb-based ternary chalcogenides

Khang Hoang; S. D. Mahanti; James R. Salvador; Mercouri G. Kanatzidis

doi:10.1103/PhysRevLett.99.156403

Atomic ordering and gap formation in Ag-Sb-based ternary chalcogenides

Khang Hoang, S. D. Mahanti, James R. Salvador, Mercouri G. Kanatzidis

Northwestern University

Research output: Contribution to journal › Article

81 Citations (Scopus)

Abstract

Novel semiconductors with tailored properties can be designed theoretically based on our understanding of the interplay of atomic and electronic structures and the nature of the electronic states near the band-gap region. We discuss here the realization of this idea in Ag-Sb-based ternary chalcogenides, which are important optical phase change and thermoelectric materials. Based on our studies we propose new systems for high-performance thermoelectrics.

Original language	English
Article number	156403
Journal	Physical review letters
Volume	99
Issue number	15
DOIs	https://doi.org/10.1103/PhysRevLett.99.156403
Publication status	Published - Oct 9 2007

Fingerprint

ASJC Scopus subject areas

Physics and Astronomy(all)

Cite this

Hoang, K., Mahanti, S. D., Salvador, J. R., & Kanatzidis, M. G. (2007). Atomic ordering and gap formation in Ag-Sb-based ternary chalcogenides. Physical review letters, 99(15), [156403]. https://doi.org/10.1103/PhysRevLett.99.156403

@article{d8276cefcae44d74b02aae602ad1d458,

title = "Atomic ordering and gap formation in Ag-Sb-based ternary chalcogenides",

abstract = "Novel semiconductors with tailored properties can be designed theoretically based on our understanding of the interplay of atomic and electronic structures and the nature of the electronic states near the band-gap region. We discuss here the realization of this idea in Ag-Sb-based ternary chalcogenides, which are important optical phase change and thermoelectric materials. Based on our studies we propose new systems for high-performance thermoelectrics.",

author = "Khang Hoang and Mahanti, {S. D.} and Salvador, {James R.} and Kanatzidis, {Mercouri G.}",

year = "2007",

month = oct

day = "9",

doi = "10.1103/PhysRevLett.99.156403",

language = "English",

volume = "99",

journal = "Physical Review Letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "15",

}

TY - JOUR

T1 - Atomic ordering and gap formation in Ag-Sb-based ternary chalcogenides

AU - Hoang, Khang

AU - Mahanti, S. D.

AU - Salvador, James R.

AU - Kanatzidis, Mercouri G.

PY - 2007/10/9

Y1 - 2007/10/9

N2 - Novel semiconductors with tailored properties can be designed theoretically based on our understanding of the interplay of atomic and electronic structures and the nature of the electronic states near the band-gap region. We discuss here the realization of this idea in Ag-Sb-based ternary chalcogenides, which are important optical phase change and thermoelectric materials. Based on our studies we propose new systems for high-performance thermoelectrics.

AB - Novel semiconductors with tailored properties can be designed theoretically based on our understanding of the interplay of atomic and electronic structures and the nature of the electronic states near the band-gap region. We discuss here the realization of this idea in Ag-Sb-based ternary chalcogenides, which are important optical phase change and thermoelectric materials. Based on our studies we propose new systems for high-performance thermoelectrics.

UR - http://www.scopus.com/inward/record.url?scp=35148887114&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=35148887114&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.99.156403

DO - 10.1103/PhysRevLett.99.156403

M3 - Article

AN - SCOPUS:35148887114

VL - 99

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 15

M1 - 156403

ER -

Access to Document

10.1103/PhysRevLett.99.156403