Atomic ordering and gap formation in Ag-Sb-based ternary chalcogenides

Khang Hoang, S. D. Mahanti, James R. Salvador, Mercouri G Kanatzidis

Research output: Contribution to journalArticle

76 Citations (Scopus)

Abstract

Novel semiconductors with tailored properties can be designed theoretically based on our understanding of the interplay of atomic and electronic structures and the nature of the electronic states near the band-gap region. We discuss here the realization of this idea in Ag-Sb-based ternary chalcogenides, which are important optical phase change and thermoelectric materials. Based on our studies we propose new systems for high-performance thermoelectrics.

Original languageEnglish
Article number156403
JournalPhysical Review Letters
Volume99
Issue number15
DOIs
Publication statusPublished - Oct 9 2007

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phase change materials
thermoelectric materials
chalcogenides
atomic structure
electronic structure
electronics

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Atomic ordering and gap formation in Ag-Sb-based ternary chalcogenides. / Hoang, Khang; Mahanti, S. D.; Salvador, James R.; Kanatzidis, Mercouri G.

In: Physical Review Letters, Vol. 99, No. 15, 156403, 09.10.2007.

Research output: Contribution to journalArticle

Hoang, Khang ; Mahanti, S. D. ; Salvador, James R. ; Kanatzidis, Mercouri G. / Atomic ordering and gap formation in Ag-Sb-based ternary chalcogenides. In: Physical Review Letters. 2007 ; Vol. 99, No. 15.
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