Atomic-scale engineering of the SiC-SiO2 interface

S. T. Pantelides, G. Duscher, M. Di Ventra, R. Buczko, K. McDonald, M. B. Huang, R. A. Weller, I. Baumvol, F. C. Stedile, C. Radtke, S. J. Pennycook, G. Chung, C. C. Tin, J. R. Williams, J. H. Won, Leonard C Feldman

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)

Abstract

We report results from three distinct but related thrusts that aim to elucidate the atomic-scale structure and properties of the SiC-SiO2 interface. a) First-principles theoretical calculations probe the global bonding arrangements and the local processes during oxidation; b) Z-contrast atomic-resolution transmission electron microscopy and electron-energy-loss spectroscopy provide images and interface spectra, and c) nuclear techniques and electrical measurements are used to profile N at the interface and determine interface trap densities.

Original languageEnglish
Title of host publicationMaterials Science Forum
PublisherTrans Tech Publ Ltd
Volume338
Publication statusPublished - 2000
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: Oct 10 1999Oct 15 1999

Other

OtherICSCRM '99: The International Conference on Silicon Carbide and Related Materials
CityResearch Triangle Park, NC, USA
Period10/10/9910/15/99

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Electron energy loss spectroscopy
Transmission electron microscopy
Oxidation

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Pantelides, S. T., Duscher, G., Di Ventra, M., Buczko, R., McDonald, K., Huang, M. B., ... Feldman, L. C. (2000). Atomic-scale engineering of the SiC-SiO2 interface. In Materials Science Forum (Vol. 338). Trans Tech Publ Ltd.

Atomic-scale engineering of the SiC-SiO2 interface. / Pantelides, S. T.; Duscher, G.; Di Ventra, M.; Buczko, R.; McDonald, K.; Huang, M. B.; Weller, R. A.; Baumvol, I.; Stedile, F. C.; Radtke, C.; Pennycook, S. J.; Chung, G.; Tin, C. C.; Williams, J. R.; Won, J. H.; Feldman, Leonard C.

Materials Science Forum. Vol. 338 Trans Tech Publ Ltd, 2000.

Research output: Chapter in Book/Report/Conference proceedingChapter

Pantelides, ST, Duscher, G, Di Ventra, M, Buczko, R, McDonald, K, Huang, MB, Weller, RA, Baumvol, I, Stedile, FC, Radtke, C, Pennycook, SJ, Chung, G, Tin, CC, Williams, JR, Won, JH & Feldman, LC 2000, Atomic-scale engineering of the SiC-SiO2 interface. in Materials Science Forum. vol. 338, Trans Tech Publ Ltd, ICSCRM '99: The International Conference on Silicon Carbide and Related Materials, Research Triangle Park, NC, USA, 10/10/99.
Pantelides ST, Duscher G, Di Ventra M, Buczko R, McDonald K, Huang MB et al. Atomic-scale engineering of the SiC-SiO2 interface. In Materials Science Forum. Vol. 338. Trans Tech Publ Ltd. 2000
Pantelides, S. T. ; Duscher, G. ; Di Ventra, M. ; Buczko, R. ; McDonald, K. ; Huang, M. B. ; Weller, R. A. ; Baumvol, I. ; Stedile, F. C. ; Radtke, C. ; Pennycook, S. J. ; Chung, G. ; Tin, C. C. ; Williams, J. R. ; Won, J. H. ; Feldman, Leonard C. / Atomic-scale engineering of the SiC-SiO2 interface. Materials Science Forum. Vol. 338 Trans Tech Publ Ltd, 2000.
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AU - Pantelides, S. T.

AU - Duscher, G.

AU - Di Ventra, M.

AU - Buczko, R.

AU - McDonald, K.

AU - Huang, M. B.

AU - Weller, R. A.

AU - Baumvol, I.

AU - Stedile, F. C.

AU - Radtke, C.

AU - Pennycook, S. J.

AU - Chung, G.

AU - Tin, C. C.

AU - Williams, J. R.

AU - Won, J. H.

AU - Feldman, Leonard C

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