Abstract
We report results from three distinct but related thrusts that aim to elucidate the atomic-scale structure and properties of the SiC-SiO2 interface. a) First-principles theoretical calculations probe the global bonding arrangements and the local processes during oxidation; b) Z-contrast atomic-resolution transmission electron microscopy and electron-energy-loss spectroscopy provide images and interface spectra, and c) nuclear techniques and electrical measurements are used to profile N at the interface and determine interface trap densities.
Original language | English |
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Pages (from-to) | II/- |
Journal | Materials Science Forum |
Volume | 338 |
Publication status | Published - 2000 |
Event | ICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA Duration: Oct 10 1999 → Oct 15 1999 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering