Atomic-scale engineering of the SiC-SiO2 interface

S. T. Pantelides; G. Duscher; M. Di Ventra; R. Buczko; K. McDonald; M. B. Huang; R. A. Weller; I. Baumvol; F. C. Stedile; C. Radtke; S. J. Pennycook; G. Chung; C. C. Tin; J. R. Williams; J. H. Won; L. C. Feldman

Atomic-scale engineering of the SiC-SiO₂ interface

S. T. Pantelides, G. Duscher, M. Di Ventra, R. Buczko, K. McDonald, M. B. Huang, R. A. Weller, I. Baumvol, F. C. Stedile, C. Radtke, S. J. Pennycook, G. Chung, C. C. Tin, J. R. Williams, J. H. Won, L. C. Feldman

Rutgers University

Research output: Contribution to journal › Conference article › peer-review

1 Citation (Scopus)

Abstract

We report results from three distinct but related thrusts that aim to elucidate the atomic-scale structure and properties of the SiC-SiO₂ interface. a) First-principles theoretical calculations probe the global bonding arrangements and the local processes during oxidation; b) Z-contrast atomic-resolution transmission electron microscopy and electron-energy-loss spectroscopy provide images and interface spectra, and c) nuclear techniques and electrical measurements are used to profile N at the interface and determine interface trap densities.

Original language	English
Pages (from-to)	II/-
Journal	Materials Science Forum
Volume	338
Publication status	Published - 2000
Event	ICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA Duration: Oct 10 1999 → Oct 15 1999

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Atomic-scale engineering of the SiC-SiO₂ interface. / Pantelides, S. T.; Duscher, G.; Di Ventra, M.; Buczko, R.; McDonald, K.; Huang, M. B.; Weller, R. A.; Baumvol, I.; Stedile, F. C.; Radtke, C.; Pennycook, S. J.; Chung, G.; Tin, C. C.; Williams, J. R.; Won, J. H.; Feldman, L. C.

In: Materials Science Forum, Vol. 338, 2000, p. II/-.

Research output: Contribution to journal › Conference article › peer-review

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title = "Atomic-scale engineering of the SiC-SiO2 interface",

abstract = "We report results from three distinct but related thrusts that aim to elucidate the atomic-scale structure and properties of the SiC-SiO2 interface. a) First-principles theoretical calculations probe the global bonding arrangements and the local processes during oxidation; b) Z-contrast atomic-resolution transmission electron microscopy and electron-energy-loss spectroscopy provide images and interface spectra, and c) nuclear techniques and electrical measurements are used to profile N at the interface and determine interface trap densities.",

author = "Pantelides, {S. T.} and G. Duscher and {Di Ventra}, M. and R. Buczko and K. McDonald and Huang, {M. B.} and Weller, {R. A.} and I. Baumvol and Stedile, {F. C.} and C. Radtke and Pennycook, {S. J.} and G. Chung and Tin, {C. C.} and Williams, {J. R.} and Won, {J. H.} and Feldman, {L. C.}",

year = "2000",

language = "English",

volume = "338",

pages = "II/--",

journal = "Materials Science Forum",

issn = "0255-5476",

publisher = "Trans Tech Publications",

note = "ICSCRM '99: The International Conference on Silicon Carbide and Related Materials ; Conference date: 10-10-1999 Through 15-10-1999",

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TY - JOUR

T1 - Atomic-scale engineering of the SiC-SiO2 interface

AU - Pantelides, S. T.

AU - Duscher, G.

AU - Di Ventra, M.

AU - Buczko, R.

AU - McDonald, K.

AU - Huang, M. B.

AU - Weller, R. A.

AU - Baumvol, I.

AU - Stedile, F. C.

AU - Radtke, C.

AU - Pennycook, S. J.

AU - Chung, G.

AU - Tin, C. C.

AU - Williams, J. R.

AU - Won, J. H.

AU - Feldman, L. C.

PY - 2000

Y1 - 2000

N2 - We report results from three distinct but related thrusts that aim to elucidate the atomic-scale structure and properties of the SiC-SiO2 interface. a) First-principles theoretical calculations probe the global bonding arrangements and the local processes during oxidation; b) Z-contrast atomic-resolution transmission electron microscopy and electron-energy-loss spectroscopy provide images and interface spectra, and c) nuclear techniques and electrical measurements are used to profile N at the interface and determine interface trap densities.

AB - We report results from three distinct but related thrusts that aim to elucidate the atomic-scale structure and properties of the SiC-SiO2 interface. a) First-principles theoretical calculations probe the global bonding arrangements and the local processes during oxidation; b) Z-contrast atomic-resolution transmission electron microscopy and electron-energy-loss spectroscopy provide images and interface spectra, and c) nuclear techniques and electrical measurements are used to profile N at the interface and determine interface trap densities.

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UR - http://www.scopus.com/inward/citedby.url?scp=0033702554&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0033702554

VL - 338

SP - II/-

JO - Materials Science Forum

JF - Materials Science Forum

SN - 0255-5476

T2 - ICSCRM '99: The International Conference on Silicon Carbide and Related Materials

Y2 - 10 October 1999 through 15 October 1999

ER -

Atomic-scale engineering of the SiC-SiO2 interface

Abstract

ASJC Scopus subject areas

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Atomic-scale engineering of the SiC-SiO₂ interface