Atomic-scale engineering of the SiC-SiO2 interface

S. T. Pantelides, G. Duscher, M. Di Ventra, R. Buczko, K. McDonald, M. B. Huang, R. A. Weller, I. Baumvol, F. C. Stedile, C. Radtke, S. J. Pennycook, G. Chung, C. C. Tin, J. R. Williams, J. H. Won, L. C. Feldman

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)


We report results from three distinct but related thrusts that aim to elucidate the atomic-scale structure and properties of the SiC-SiO2 interface. a) First-principles theoretical calculations probe the global bonding arrangements and the local processes during oxidation; b) Z-contrast atomic-resolution transmission electron microscopy and electron-energy-loss spectroscopy provide images and interface spectra, and c) nuclear techniques and electrical measurements are used to profile N at the interface and determine interface trap densities.

Original languageEnglish
Pages (from-to)II/-
JournalMaterials Science Forum
Publication statusPublished - 2000
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: Oct 10 1999Oct 15 1999

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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