Atomic-scale templates patterned by ultrahigh vacuum scanning tunneling microscopy on silicon

Michael A. Walsh, Mark C Hersam

Research output: Contribution to journalArticle

57 Citations (Scopus)

Abstract

The ultrahigh vacuum (UHV) scanning tunneling microscope (STM) enables patterning and characterization of the physical, chemical, and electronic properties of nanostructures on surfaces with atomic precision. On hydrogen-passivated Si(100) surfaces, selective nanopatterning with the STM probe allows the creation of atomic-scale templates of dangling bonds surrounded by a robust hydrogen resist. Feedback-controlled lithography, which can remove a single hydrogen atom from the Si(100):H surface, demonstrates high-resolution nanopatterning. The resulting patterns can be used as templates for a variety of materials to form hybrid silicon nanostructures while maintaining a pristine background resist. The versatility of this UHV-STM nanolithography approach has led to its use on a variety of other substrates, including alternative hydrogen-passivated semiconductor surfaces, molecular resists, and native oxide resists. This review discusses the mechanisms of STM-induced hydrogen desorption, the postpatterning deposition of molecules and materials, and the implications for nanoscale device fabrication.

Original languageEnglish
Pages (from-to)193-216
Number of pages24
JournalAnnual Review of Physical Chemistry
Volume60
DOIs
Publication statusPublished - May 2009

Fingerprint

Ultrahigh vacuum
Scanning tunneling microscopy
Silicon
ultrahigh vacuum
scanning tunneling microscopy
Hydrogen
templates
microscopes
Microscopes
scanning
silicon
Scanning
hydrogen
Nanostructures
selective surfaces
Nanolithography
versatility
Dangling bonds
chemical properties
hydrogen atoms

Keywords

  • Feedback-controlled lithography
  • Nanoelectronics
  • Nanolithography
  • Surface chemistry

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry

Cite this

Atomic-scale templates patterned by ultrahigh vacuum scanning tunneling microscopy on silicon. / Walsh, Michael A.; Hersam, Mark C.

In: Annual Review of Physical Chemistry, Vol. 60, 05.2009, p. 193-216.

Research output: Contribution to journalArticle

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