Abstract
The structure and stoichiometry at the (111) Si-SiO//2 interface has been investigated by ion backscattering channeling methods. In qualitative agreement with other oxide covered Si surfaces studied by this technique, we find the oxide to be stoichiometric to approximately one monolayer of the interface and a thin region (1 EN DASH 2 monolayers) of distorted Si crystal. Further measurements were carried out to evaluate the magnitude and direction of the Si atomic displacements at the interface.
| Original language | English |
|---|---|
| Pages (from-to) | 4884-4887 |
| Number of pages | 4 |
| Journal | Journal of Applied Physics |
| Volume | 53 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - Jul 1982 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
- Physics and Astronomy (miscellaneous)
Cite this
ATOMIC STRUCTURE AT THE (111) Si-SiO//2 INTERFACE. / Haight, R.; Feldman, Leonard C.
In: Journal of Applied Physics, Vol. 53, No. 7, 07.1982, p. 4884-4887.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - ATOMIC STRUCTURE AT THE (111) Si-SiO//2 INTERFACE.
AU - Haight, R.
AU - Feldman, Leonard C
PY - 1982/7
Y1 - 1982/7
N2 - The structure and stoichiometry at the (111) Si-SiO//2 interface has been investigated by ion backscattering channeling methods. In qualitative agreement with other oxide covered Si surfaces studied by this technique, we find the oxide to be stoichiometric to approximately one monolayer of the interface and a thin region (1 EN DASH 2 monolayers) of distorted Si crystal. Further measurements were carried out to evaluate the magnitude and direction of the Si atomic displacements at the interface.
AB - The structure and stoichiometry at the (111) Si-SiO//2 interface has been investigated by ion backscattering channeling methods. In qualitative agreement with other oxide covered Si surfaces studied by this technique, we find the oxide to be stoichiometric to approximately one monolayer of the interface and a thin region (1 EN DASH 2 monolayers) of distorted Si crystal. Further measurements were carried out to evaluate the magnitude and direction of the Si atomic displacements at the interface.
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U2 - 10.1063/1.331320
DO - 10.1063/1.331320
M3 - Article
VL - 53
SP - 4884
EP - 4887
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 7
ER -