ATOMIC STRUCTURE AT THE (111) Si-SiO//2 INTERFACE.

R. Haight; Leonard C Feldman

doi:10.1063/1.331320

ATOMIC STRUCTURE AT THE (111) Si-SiO//2 INTERFACE.

R. Haight, Leonard C Feldman

Rutgers University

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Abstract

The structure and stoichiometry at the (111) Si-SiO//2 interface has been investigated by ion backscattering channeling methods. In qualitative agreement with other oxide covered Si surfaces studied by this technique, we find the oxide to be stoichiometric to approximately one monolayer of the interface and a thin region (1 EN DASH 2 monolayers) of distorted Si crystal. Further measurements were carried out to evaluate the magnitude and direction of the Si atomic displacements at the interface.

Original language	English
Pages (from-to)	4884-4887
Number of pages	4
Journal	Journal of Applied Physics
Volume	53
Issue number	7
DOIs	https://doi.org/10.1063/1.331320
Publication status	Published - Jul 1982

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ASJC Scopus subject areas

Physics and Astronomy(all)
Physics and Astronomy (miscellaneous)

Cite this

Haight, R., & Feldman, L. C. (1982). ATOMIC STRUCTURE AT THE (111) Si-SiO//2 INTERFACE. Journal of Applied Physics, 53(7), 4884-4887. https://doi.org/10.1063/1.331320

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10.1063/1.331320