ATOMIC STRUCTURE AT THE (111) Si-SiO//2 INTERFACE.

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Abstract

The structure and stoichiometry at the (111) Si-SiO//2 interface has been investigated by ion backscattering channeling methods. In qualitative agreement with other oxide covered Si surfaces studied by this technique, we find the oxide to be stoichiometric to approximately one monolayer of the interface and a thin region (1 EN DASH 2 monolayers) of distorted Si crystal. Further measurements were carried out to evaluate the magnitude and direction of the Si atomic displacements at the interface.

Original languageEnglish
Pages (from-to)4884-4887
Number of pages4
JournalJournal of Applied Physics
Volume53
Issue number7
DOIs
Publication statusPublished - Jul 1982

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oxides
stoichiometry
backscattering
crystals
ions

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

ATOMIC STRUCTURE AT THE (111) Si-SiO//2 INTERFACE. / Haight, R.; Feldman, Leonard C.

In: Journal of Applied Physics, Vol. 53, No. 7, 07.1982, p. 4884-4887.

Research output: Contribution to journalArticle

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