Atomically resolved charge redistribution for Ga nanocluster arrays on the Si(111)-7 × 7 surface

Qing Hua Wang, Mark C Hersam

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

A study was conducted to observe atomically resolved, delocalized two-dimensional charge redistribution associated with Ga nanocluster arrays on the Si(111)-7×7 surface. The study used the topographic scanning tunneling microscopy (STM) images and spatial maps of the differential tunneling conductance to measure the surface local density of states (LDOS) of the surface. The study found that the electronic properties of self-assembled Ga nanocluster array on the Si(111)-7×7 surface can be mapped with atomic-scale spatial resolution. The study found that differential tunneling conductance maps show regions of increased LDOS form an interconnected two-dimensional network of Ga nanoclusters. The study used a UHV STM system and imaging chambers operating at room temperature, and placed the Ga metal in an alumina-coated W wire boat.

Original languageEnglish
Pages (from-to)915-919
Number of pages5
JournalSmall
Volume4
Issue number7
DOIs
Publication statusPublished - Jul 2008

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Scanning Tunnelling Microscopy
Nanoclusters
Ships
Aluminum Oxide
Scanning tunneling microscopy
Operating Rooms
Metals
Temperature
Boats
Electronic properties
Alumina
Wire
Imaging techniques

Keywords

  • Electronic structure
  • Scanning tunneling microscopy
  • Self-assembly
  • Semiconductor nanocrystals
  • Surface patterning

ASJC Scopus subject areas

  • Biomaterials
  • Engineering (miscellaneous)
  • Biotechnology
  • Medicine(all)

Cite this

Atomically resolved charge redistribution for Ga nanocluster arrays on the Si(111)-7 × 7 surface. / Wang, Qing Hua; Hersam, Mark C.

In: Small, Vol. 4, No. 7, 07.2008, p. 915-919.

Research output: Contribution to journalArticle

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