Band alignment issues in metal/dielectric stacks: A combined photoemission and inverse photoemission study of the HfO 2/Pt and HfO 2/Hf systems

S. Sayan; R. A. Bartynski; J. Robertson; J. S. Suehle; E. Vogel; N. V. Nguyen; J. Ehrstein; J. J. Kopanski; S. Suzer; M. Banaszak Holl; E. Garfunkel

Band alignment issues in metal/dielectric stacks: A combined photoemission and inverse photoemission study of the HfO ₂/Pt and HfO ₂/Hf systems

S. Sayan, R. A. Bartynski, J. Robertson, J. S. Suehle, E. Vogel, N. V. Nguyen, J. Ehrstein, J. J. Kopanski, S. Suzer, M. Banaszak Holl, E. Garfunkel

Rutgers University

Research output: Contribution to conference › Paper › peer-review

Abstract

We have studied the HfO ₂/Hf and HfO ₂/Pt systems by photoemission and inverse photoemission spectroscopies. It is found that the "effective workfunction" of metals in multilayer structures are different than their vacuum workfunctions and are modified by their interface dipoles at the metal/high-k interface. The effective workfunction of Hf is 4.4 eV whereas that of Pt is 5.3 eV, within the range of acceptable values for PMOS and NMOS respectively.

Original language	English
Pages	255-263
Number of pages	9
Publication status	Published - Oct 28 2004
Event	Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium - San Antonio, TX, United States Duration: May 10 2004 → May 12 2004

Other

Other	Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium
Country	United States
City	San Antonio, TX
Period	5/10/04 → 5/12/04

ASJC Scopus subject areas

Engineering(all)

Fingerprint Dive into the research topics of 'Band alignment issues in metal/dielectric stacks: A combined photoemission and inverse photoemission study of the HfO <sub>2</sub>/Pt and HfO <sub>2</sub>/Hf systems'. Together they form a unique fingerprint.

Cite this

Sayan, S., Bartynski, R. A., Robertson, J., Suehle, J. S., Vogel, E., Nguyen, N. V., Ehrstein, J., Kopanski, J. J., Suzer, S., Holl, M. B., & Garfunkel, E. (2004). Band alignment issues in metal/dielectric stacks: A combined photoemission and inverse photoemission study of the HfO ₂/Pt and HfO ₂/Hf systems. 255-263. Paper presented at Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium, San Antonio, TX, United States.

Band alignment issues in metal/dielectric stacks : A combined photoemission and inverse photoemission study of the HfO ₂/Pt and HfO ₂/Hf systems. / Sayan, S.; Bartynski, R. A.; Robertson, J.; Suehle, J. S.; Vogel, E.; Nguyen, N. V.; Ehrstein, J.; Kopanski, J. J.; Suzer, S.; Holl, M. Banaszak; Garfunkel, E.

2004. 255-263 Paper presented at Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium, San Antonio, TX, United States.

Research output: Contribution to conference › Paper › peer-review

Sayan, S, Bartynski, RA, Robertson, J, Suehle, JS, Vogel, E, Nguyen, NV, Ehrstein, J, Kopanski, JJ, Suzer, S, Holl, MB & Garfunkel, E 2004, 'Band alignment issues in metal/dielectric stacks: A combined photoemission and inverse photoemission study of the HfO ₂/Pt and HfO ₂/Hf systems', Paper presented at Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium, San Antonio, TX, United States, 5/10/04 - 5/12/04 pp. 255-263.

Sayan S, Bartynski RA, Robertson J, Suehle JS, Vogel E, Nguyen NV et al. Band alignment issues in metal/dielectric stacks: A combined photoemission and inverse photoemission study of the HfO ₂/Pt and HfO ₂/Hf systems. 2004. Paper presented at Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium, San Antonio, TX, United States.

Sayan, S. ; Bartynski, R. A. ; Robertson, J. ; Suehle, J. S. ; Vogel, E. ; Nguyen, N. V. ; Ehrstein, J. ; Kopanski, J. J. ; Suzer, S. ; Holl, M. Banaszak ; Garfunkel, E. / Band alignment issues in metal/dielectric stacks : A combined photoemission and inverse photoemission study of the HfO ₂/Pt and HfO ₂/Hf systems. Paper presented at Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium, San Antonio, TX, United States.9 p.

@conference{70c578278c1f43aabb52a3eded46b785,

title = "Band alignment issues in metal/dielectric stacks: A combined photoemission and inverse photoemission study of the HfO 2/Pt and HfO 2/Hf systems",

abstract = "We have studied the HfO 2/Hf and HfO 2/Pt systems by photoemission and inverse photoemission spectroscopies. It is found that the {"}effective workfunction{"} of metals in multilayer structures are different than their vacuum workfunctions and are modified by their interface dipoles at the metal/high-k interface. The effective workfunction of Hf is 4.4 eV whereas that of Pt is 5.3 eV, within the range of acceptable values for PMOS and NMOS respectively.",

author = "S. Sayan and Bartynski, {R. A.} and J. Robertson and Suehle, {J. S.} and E. Vogel and Nguyen, {N. V.} and J. Ehrstein and Kopanski, {J. J.} and S. Suzer and Holl, {M. Banaszak} and E. Garfunkel",

year = "2004",

month = oct,

day = "28",

language = "English",

pages = "255--263",

note = "Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium ; Conference date: 10-05-2004 Through 12-05-2004",

}

TY - CONF

T1 - Band alignment issues in metal/dielectric stacks

T2 - Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium

AU - Sayan, S.

AU - Bartynski, R. A.

AU - Robertson, J.

AU - Suehle, J. S.

AU - Vogel, E.

AU - Nguyen, N. V.

AU - Ehrstein, J.

AU - Kopanski, J. J.

AU - Suzer, S.

AU - Holl, M. Banaszak

AU - Garfunkel, E.

PY - 2004/10/28

Y1 - 2004/10/28

N2 - We have studied the HfO 2/Hf and HfO 2/Pt systems by photoemission and inverse photoemission spectroscopies. It is found that the "effective workfunction" of metals in multilayer structures are different than their vacuum workfunctions and are modified by their interface dipoles at the metal/high-k interface. The effective workfunction of Hf is 4.4 eV whereas that of Pt is 5.3 eV, within the range of acceptable values for PMOS and NMOS respectively.

AB - We have studied the HfO 2/Hf and HfO 2/Pt systems by photoemission and inverse photoemission spectroscopies. It is found that the "effective workfunction" of metals in multilayer structures are different than their vacuum workfunctions and are modified by their interface dipoles at the metal/high-k interface. The effective workfunction of Hf is 4.4 eV whereas that of Pt is 5.3 eV, within the range of acceptable values for PMOS and NMOS respectively.

UR - http://www.scopus.com/inward/record.url?scp=5744247717&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=5744247717&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:5744247717

SP - 255

EP - 263

Y2 - 10 May 2004 through 12 May 2004