Abstract
We have studied the HfO 2/Hf and HfO 2/Pt systems by photoemission and inverse photoemission spectroscopies. It is found that the "effective workfunction" of metals in multilayer structures are different than their vacuum workfunctions and are modified by their interface dipoles at the metal/high-k interface. The effective workfunction of Hf is 4.4 eV whereas that of Pt is 5.3 eV, within the range of acceptable values for PMOS and NMOS respectively.
| Original language | English |
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| Pages | 255-263 |
| Number of pages | 9 |
| Publication status | Published - Oct 28 2004 |
| Event | Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium - San Antonio, TX, United States Duration: May 10 2004 → May 12 2004 |
Other
| Other | Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium |
|---|---|
| Country | United States |
| City | San Antonio, TX |
| Period | 5/10/04 → 5/12/04 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
Sayan, S., Bartynski, R. A., Robertson, J., Suehle, J. S., Vogel, E., Nguyen, N. V., Ehrstein, J., Kopanski, J. J., Suzer, S., Holl, M. B., & Garfunkel, E. (2004). Band alignment issues in metal/dielectric stacks: A combined photoemission and inverse photoemission study of the HfO 2/Pt and HfO 2/Hf systems. 255-263. Paper presented at Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium, San Antonio, TX, United States.