Band alignment issues in metal/dielectric stacks: A combined photoemission and inverse photoemission study of the HfO 2/Pt and HfO 2/Hf systems

S. Sayan, R. A. Bartynski, J. Robertson, J. S. Suehle, E. Vogel, N. V. Nguyen, J. Ehrstein, J. J. Kopanski, S. Suzer, M. Banaszak Holl, E. Garfunkel

Research output: Contribution to conferencePaper

Abstract

We have studied the HfO 2/Hf and HfO 2/Pt systems by photoemission and inverse photoemission spectroscopies. It is found that the "effective workfunction" of metals in multilayer structures are different than their vacuum workfunctions and are modified by their interface dipoles at the metal/high-k interface. The effective workfunction of Hf is 4.4 eV whereas that of Pt is 5.3 eV, within the range of acceptable values for PMOS and NMOS respectively.

Original languageEnglish
Pages255-263
Number of pages9
Publication statusPublished - Oct 28 2004
EventAdvanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium - San Antonio, TX, United States
Duration: May 10 2004May 12 2004

Other

OtherAdvanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium
CountryUnited States
CitySan Antonio, TX
Period5/10/045/12/04

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Sayan, S., Bartynski, R. A., Robertson, J., Suehle, J. S., Vogel, E., Nguyen, N. V., Ehrstein, J., Kopanski, J. J., Suzer, S., Holl, M. B., & Garfunkel, E. (2004). Band alignment issues in metal/dielectric stacks: A combined photoemission and inverse photoemission study of the HfO 2/Pt and HfO 2/Hf systems. 255-263. Paper presented at Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II - Proceedings of the International Symposium, San Antonio, TX, United States.