Band alignment issues related to HfO 2/SiO 2/p-Si gate stacks

S. Sayan, T. Emge, Eric Garfunkel, Xinyuan Zhao, L. Wielunski, R. A. Bartynski, David Vanderbilt, J. S. Suehle, S. Suzer, M. Banaszak-Holl

Research output: Contribution to journalArticle

91 Citations (Scopus)

Abstract

The valence and conduction band densities of states for the HfO 2/SiO 2/Si structure are determined by soft x-ray photoemission and inverse photoemission. First principles calculations are used to help in assigning valence band maxima and conduction band minima. The energies of defect states at the band edges are estimated by comparing the theoretical and experimental results. Determinations of the local surface potentials before and after a forming gas anneal are used to help determine the possible location of the charge in the film.

Original languageEnglish
Article number7
Pages (from-to)7485-7491
Number of pages7
JournalJournal of Applied Physics
Volume96
Issue number12
DOIs
Publication statusPublished - Dec 15 2004

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alignment
conduction bands
photoelectric emission
valence
defects
gases
x rays
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Sayan, S., Emge, T., Garfunkel, E., Zhao, X., Wielunski, L., Bartynski, R. A., ... Banaszak-Holl, M. (2004). Band alignment issues related to HfO 2/SiO 2/p-Si gate stacks. Journal of Applied Physics, 96(12), 7485-7491. [7]. https://doi.org/10.1063/1.1803107

Band alignment issues related to HfO 2/SiO 2/p-Si gate stacks. / Sayan, S.; Emge, T.; Garfunkel, Eric; Zhao, Xinyuan; Wielunski, L.; Bartynski, R. A.; Vanderbilt, David; Suehle, J. S.; Suzer, S.; Banaszak-Holl, M.

In: Journal of Applied Physics, Vol. 96, No. 12, 7, 15.12.2004, p. 7485-7491.

Research output: Contribution to journalArticle

Sayan, S, Emge, T, Garfunkel, E, Zhao, X, Wielunski, L, Bartynski, RA, Vanderbilt, D, Suehle, JS, Suzer, S & Banaszak-Holl, M 2004, 'Band alignment issues related to HfO 2/SiO 2/p-Si gate stacks', Journal of Applied Physics, vol. 96, no. 12, 7, pp. 7485-7491. https://doi.org/10.1063/1.1803107
Sayan S, Emge T, Garfunkel E, Zhao X, Wielunski L, Bartynski RA et al. Band alignment issues related to HfO 2/SiO 2/p-Si gate stacks. Journal of Applied Physics. 2004 Dec 15;96(12):7485-7491. 7. https://doi.org/10.1063/1.1803107
Sayan, S. ; Emge, T. ; Garfunkel, Eric ; Zhao, Xinyuan ; Wielunski, L. ; Bartynski, R. A. ; Vanderbilt, David ; Suehle, J. S. ; Suzer, S. ; Banaszak-Holl, M. / Band alignment issues related to HfO 2/SiO 2/p-Si gate stacks. In: Journal of Applied Physics. 2004 ; Vol. 96, No. 12. pp. 7485-7491.
@article{bd1fa3174d1f4fe9a5cf3b39889edaf0,
title = "Band alignment issues related to HfO 2/SiO 2/p-Si gate stacks",
abstract = "The valence and conduction band densities of states for the HfO 2/SiO 2/Si structure are determined by soft x-ray photoemission and inverse photoemission. First principles calculations are used to help in assigning valence band maxima and conduction band minima. The energies of defect states at the band edges are estimated by comparing the theoretical and experimental results. Determinations of the local surface potentials before and after a forming gas anneal are used to help determine the possible location of the charge in the film.",
author = "S. Sayan and T. Emge and Eric Garfunkel and Xinyuan Zhao and L. Wielunski and Bartynski, {R. A.} and David Vanderbilt and Suehle, {J. S.} and S. Suzer and M. Banaszak-Holl",
year = "2004",
month = "12",
day = "15",
doi = "10.1063/1.1803107",
language = "English",
volume = "96",
pages = "7485--7491",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "12",

}

TY - JOUR

T1 - Band alignment issues related to HfO 2/SiO 2/p-Si gate stacks

AU - Sayan, S.

AU - Emge, T.

AU - Garfunkel, Eric

AU - Zhao, Xinyuan

AU - Wielunski, L.

AU - Bartynski, R. A.

AU - Vanderbilt, David

AU - Suehle, J. S.

AU - Suzer, S.

AU - Banaszak-Holl, M.

PY - 2004/12/15

Y1 - 2004/12/15

N2 - The valence and conduction band densities of states for the HfO 2/SiO 2/Si structure are determined by soft x-ray photoemission and inverse photoemission. First principles calculations are used to help in assigning valence band maxima and conduction band minima. The energies of defect states at the band edges are estimated by comparing the theoretical and experimental results. Determinations of the local surface potentials before and after a forming gas anneal are used to help determine the possible location of the charge in the film.

AB - The valence and conduction band densities of states for the HfO 2/SiO 2/Si structure are determined by soft x-ray photoemission and inverse photoemission. First principles calculations are used to help in assigning valence band maxima and conduction band minima. The energies of defect states at the band edges are estimated by comparing the theoretical and experimental results. Determinations of the local surface potentials before and after a forming gas anneal are used to help determine the possible location of the charge in the film.

UR - http://www.scopus.com/inward/record.url?scp=19944362147&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=19944362147&partnerID=8YFLogxK

U2 - 10.1063/1.1803107

DO - 10.1063/1.1803107

M3 - Article

VL - 96

SP - 7485

EP - 7491

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 12

M1 - 7

ER -