Band alignment issues related to HfO 2/SiO 2/p-Si gate stacks

S. Sayan, T. Emge, E. Garfunkel, Xinyuan Zhao, L. Wielunski, R. A. Bartynski, David Vanderbilt, J. S. Suehle, S. Suzer, M. Banaszak-Holl

Research output: Contribution to journalArticle

92 Citations (Scopus)


The valence and conduction band densities of states for the HfO 2/SiO 2/Si structure are determined by soft x-ray photoemission and inverse photoemission. First principles calculations are used to help in assigning valence band maxima and conduction band minima. The energies of defect states at the band edges are estimated by comparing the theoretical and experimental results. Determinations of the local surface potentials before and after a forming gas anneal are used to help determine the possible location of the charge in the film.

Original languageEnglish
Article number7
Pages (from-to)7485-7491
Number of pages7
JournalJournal of Applied Physics
Issue number12
Publication statusPublished - Dec 15 2004


ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Sayan, S., Emge, T., Garfunkel, E., Zhao, X., Wielunski, L., Bartynski, R. A., Vanderbilt, D., Suehle, J. S., Suzer, S., & Banaszak-Holl, M. (2004). Band alignment issues related to HfO 2/SiO 2/p-Si gate stacks. Journal of Applied Physics, 96(12), 7485-7491. [7].