Band gap engineering of quaternary-alloyed ZnCdSSe quantum dots via a facile phosphine-free colloidal method

Zhengtao Deng, Hao Yan, Yan Liu

Research output: Contribution to journalArticle

109 Citations (Scopus)

Abstract

(Chemical Equation Presented) We demonstrate the synthesis of quaternary-alloyed ZnxCd1-xSySe 1-y quantum dots (ZnCdSSe QQDs) across the entire composition range (x, y) = 0 to 1 with a size tunable from 4.0 to 10.0 nm by a facile, "green", phosphine-free, low-cost colloidal method. The ZnCdSSe QQDs have both composition- and size-dependent band gaps, which can be hybrid-engineered to span the entire visible spectrum. The new ZnCdSSe QQDs are easy to synthesize and have high quantum yields (up to 65%) without the necessity of overcoating a shell. These new quantum dots may find broad uses in biolabeling, biosensing, light-emitting diodes, and other nanodevice applications.

Original languageEnglish
Pages (from-to)17744-17745
Number of pages2
JournalJournal of the American Chemical Society
Volume131
Issue number49
DOIs
Publication statusPublished - Dec 16 2009

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phosphine
Quantum Dots
Semiconductor quantum dots
Energy gap
Quantum yield
Chemical analysis
Light emitting diodes
Light
Costs and Cost Analysis
Costs

ASJC Scopus subject areas

  • Chemistry(all)
  • Catalysis
  • Biochemistry
  • Colloid and Surface Chemistry

Cite this

Band gap engineering of quaternary-alloyed ZnCdSSe quantum dots via a facile phosphine-free colloidal method. / Deng, Zhengtao; Yan, Hao; Liu, Yan.

In: Journal of the American Chemical Society, Vol. 131, No. 49, 16.12.2009, p. 17744-17745.

Research output: Contribution to journalArticle

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