Band-like transport in high mobility unencapsulated single-layer MoS 2 transistors

Deep Jariwala, Vinod K. Sangwan, Dattatray J. Late, James E. Johns, Vinayak P. Dravid, Tobin J Marks, Lincoln J. Lauhon, Mark C Hersam

Research output: Contribution to journalArticle

247 Citations (Scopus)

Abstract

Ultra-thin MoS2 has recently emerged as a promising two-dimensional semiconductor for electronic and optoelectronic applications. Here, we report high mobility (>60 cm2/Vs at room temperature) field-effect transistors that employ unencapsulated single-layer MoS2 on oxidized Si wafers with a low level of extrinsic contamination. While charge transport in the sub-threshold regime is consistent with a variable range hopping model, monotonically decreasing field-effect mobility with increasing temperature suggests band-like transport in the linear regime. At temperatures below 100 K, temperature-independent mobility is limited by Coulomb scattering, whereas, at temperatures above 100 K, phonon-limited mobility decreases as a power law with increasing temperature.

Original languageEnglish
Article number173107
JournalApplied Physics Letters
Volume102
Issue number17
DOIs
Publication statusPublished - Apr 29 2013

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transistors
temperature
contamination
temperature distribution
field effect transistors
wafers
thresholds
room temperature
scattering
electronics

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Band-like transport in high mobility unencapsulated single-layer MoS 2 transistors. / Jariwala, Deep; Sangwan, Vinod K.; Late, Dattatray J.; Johns, James E.; Dravid, Vinayak P.; Marks, Tobin J; Lauhon, Lincoln J.; Hersam, Mark C.

In: Applied Physics Letters, Vol. 102, No. 17, 173107, 29.04.2013.

Research output: Contribution to journalArticle

Jariwala, D, Sangwan, VK, Late, DJ, Johns, JE, Dravid, VP, Marks, TJ, Lauhon, LJ & Hersam, MC 2013, 'Band-like transport in high mobility unencapsulated single-layer MoS 2 transistors', Applied Physics Letters, vol. 102, no. 17, 173107. https://doi.org/10.1063/1.4803920
Jariwala, Deep ; Sangwan, Vinod K. ; Late, Dattatray J. ; Johns, James E. ; Dravid, Vinayak P. ; Marks, Tobin J ; Lauhon, Lincoln J. ; Hersam, Mark C. / Band-like transport in high mobility unencapsulated single-layer MoS 2 transistors. In: Applied Physics Letters. 2013 ; Vol. 102, No. 17.
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