Band-like transport in high mobility unencapsulated single-layer MoS 2 transistors

Deep Jariwala, Vinod K. Sangwan, Dattatray J. Late, James E. Johns, Vinayak P. Dravid, Tobin J. Marks, Lincoln J. Lauhon, Mark C. Hersam

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Abstract

Ultra-thin MoS2 has recently emerged as a promising two-dimensional semiconductor for electronic and optoelectronic applications. Here, we report high mobility (>60 cm2/Vs at room temperature) field-effect transistors that employ unencapsulated single-layer MoS2 on oxidized Si wafers with a low level of extrinsic contamination. While charge transport in the sub-threshold regime is consistent with a variable range hopping model, monotonically decreasing field-effect mobility with increasing temperature suggests band-like transport in the linear regime. At temperatures below 100 K, temperature-independent mobility is limited by Coulomb scattering, whereas, at temperatures above 100 K, phonon-limited mobility decreases as a power law with increasing temperature.

Original languageEnglish
Article number173107
JournalApplied Physics Letters
Volume102
Issue number17
DOIs
Publication statusPublished - Apr 29 2013

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Jariwala, D., Sangwan, V. K., Late, D. J., Johns, J. E., Dravid, V. P., Marks, T. J., Lauhon, L. J., & Hersam, M. C. (2013). Band-like transport in high mobility unencapsulated single-layer MoS 2 transistors. Applied Physics Letters, 102(17), [173107]. https://doi.org/10.1063/1.4803920