Band offsets between amorphous LaAl O3 and In0.53 Ga0.47 As

N. Goel, W. Tsai, C. M. Garner, Y. Sun, P. Pianetta, M. Warusawithana, D. G. Schlom, H. Wen, C. Gaspe, J. C. Keay, M. B. Santos, L. V. Goncharova, Eric Garfunkel, T. Gustafsson

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Abstract

The band offsets between an amorphous LaAl O3 dielectric prepared by molecular-beam deposition and a n -type In0.53 Ga0.47 As (001) layer have been measured using synchrotron radiation photoemission spectroscopy. The valence and conduction band offsets at the postdeposition annealed LaAl O3 InGaAs interface are 3.1±0.1 and 2.35±0.2 eV, respectively. The band gap of LaAl O3, as determined by Al 2p and O 1s core level energy loss spectra, is 6.2±0.1 eV. Within the resolution of the medium energy ion scattering technique, no interfacial oxide layer is seen between the InGaAs and the 3.6 nm thick amorphous LaAl O3.

Original languageEnglish
Article number113515
JournalApplied Physics Letters
Volume91
Issue number11
DOIs
Publication statusPublished - 2007

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ion scattering
molecular beams
conduction bands
synchrotron radiation
photoelectric emission
energy dissipation
valence
oxides
spectroscopy
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Goel, N., Tsai, W., Garner, C. M., Sun, Y., Pianetta, P., Warusawithana, M., ... Gustafsson, T. (2007). Band offsets between amorphous LaAl O3 and In0.53 Ga0.47 As. Applied Physics Letters, 91(11), [113515]. https://doi.org/10.1063/1.2783264

Band offsets between amorphous LaAl O3 and In0.53 Ga0.47 As. / Goel, N.; Tsai, W.; Garner, C. M.; Sun, Y.; Pianetta, P.; Warusawithana, M.; Schlom, D. G.; Wen, H.; Gaspe, C.; Keay, J. C.; Santos, M. B.; Goncharova, L. V.; Garfunkel, Eric; Gustafsson, T.

In: Applied Physics Letters, Vol. 91, No. 11, 113515, 2007.

Research output: Contribution to journalArticle

Goel, N, Tsai, W, Garner, CM, Sun, Y, Pianetta, P, Warusawithana, M, Schlom, DG, Wen, H, Gaspe, C, Keay, JC, Santos, MB, Goncharova, LV, Garfunkel, E & Gustafsson, T 2007, 'Band offsets between amorphous LaAl O3 and In0.53 Ga0.47 As', Applied Physics Letters, vol. 91, no. 11, 113515. https://doi.org/10.1063/1.2783264
Goel N, Tsai W, Garner CM, Sun Y, Pianetta P, Warusawithana M et al. Band offsets between amorphous LaAl O3 and In0.53 Ga0.47 As. Applied Physics Letters. 2007;91(11). 113515. https://doi.org/10.1063/1.2783264
Goel, N. ; Tsai, W. ; Garner, C. M. ; Sun, Y. ; Pianetta, P. ; Warusawithana, M. ; Schlom, D. G. ; Wen, H. ; Gaspe, C. ; Keay, J. C. ; Santos, M. B. ; Goncharova, L. V. ; Garfunkel, Eric ; Gustafsson, T. / Band offsets between amorphous LaAl O3 and In0.53 Ga0.47 As. In: Applied Physics Letters. 2007 ; Vol. 91, No. 11.
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