The band offsets between an amorphous LaAl O3 dielectric prepared by molecular-beam deposition and a n -type In0.53 Ga0.47 As (001) layer have been measured using synchrotron radiation photoemission spectroscopy. The valence and conduction band offsets at the postdeposition annealed LaAl O3 InGaAs interface are 3.1±0.1 and 2.35±0.2 eV, respectively. The band gap of LaAl O3, as determined by Al 2p and O 1s core level energy loss spectra, is 6.2±0.1 eV. Within the resolution of the medium energy ion scattering technique, no interfacial oxide layer is seen between the InGaAs and the 3.6 nm thick amorphous LaAl O3.
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)