Bandgap enhanced random laser

Shihhui Chang, Seng Tiong Ho, Y. Ling, Hui Cao, E. Seeling, X. Liu, Robert P. H. Chang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The size of the lasing states in ordered, partially ordered, and completely disordered systems were compared. As such, the spatial profile and dwell time of the localized states with the finite-difference time-domain (FDTD) method was calculated. By comparing the numerical results with the experimental data, the lasing threshold was reduced due to the effect of photonic bandgap on random laser.

Original languageEnglish
Title of host publicationConference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series
Pages1-2
Number of pages2
Volume74
Publication statusPublished - 2002
EventQuantum Electronics and Laser Science (QELS) 2002 - Long Beach, CA, United States
Duration: May 19 2002May 24 2002

Other

OtherQuantum Electronics and Laser Science (QELS) 2002
CountryUnited States
CityLong Beach, CA
Period5/19/025/24/02

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Chang, S., Ho, S. T., Ling, Y., Cao, H., Seeling, E., Liu, X., & Chang, R. P. H. (2002). Bandgap enhanced random laser. In Conference on Quantum Electronics and Laser Science (QELS) - Technical Digest Series (Vol. 74, pp. 1-2)