Bandgap tunability in Zn(Sn,Ge)N2 semiconductor alloys

Prineha Narang, Shiyou Chen, Naomi C. Coronel, Sheraz Gul, Junko Yano, Lin Wang Wang, Nathan S Lewis, Harry A. Atwater

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

ZnSn1-xGexN2 direct bandgap semiconductor alloys, with a crystal structure and electronic structure similar to InGaN, are earth-abundant alternatives for efficient, high-quality optoelectronic devices and solar-energy conversion. The bandgap is tunable almost monotonically from 2 eV (ZnSnN2) to 3.1 eV (ZnGeN2) by control of the Sn/Ge ratio.

Original languageEnglish
Pages (from-to)1235-1241
Number of pages7
JournalAdvanced Materials
Volume26
Issue number8
DOIs
Publication statusPublished - Feb 26 2014

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Keywords

  • bandgap
  • miscibility
  • Zn(Sn,Ge)N semiconductor alloys

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Narang, P., Chen, S., Coronel, N. C., Gul, S., Yano, J., Wang, L. W., ... Atwater, H. A. (2014). Bandgap tunability in Zn(Sn,Ge)N2 semiconductor alloys. Advanced Materials, 26(8), 1235-1241. https://doi.org/10.1002/adma.201304473