Bandgap tunability in Zn(Sn,Ge)N2 semiconductor alloys

Prineha Narang; Shiyou Chen; Naomi C. Coronel; Sheraz Gul; Junko Yano; Lin Wang Wang; Nathan S. Lewis; Harry A. Atwater

doi:10.1002/adma.201304473

Bandgap tunability in Zn(Sn,Ge)N₂ semiconductor alloys

Prineha Narang, Shiyou Chen, Naomi C. Coronel, Sheraz Gul, Junko Yano, Lin Wang Wang, Nathan S. Lewis, Harry A. Atwater

California Institute of Technology

Research output: Contribution to journal › Article

37 Citations (Scopus)

Abstract

ZnSn_1-xGe_xN₂ direct bandgap semiconductor alloys, with a crystal structure and electronic structure similar to InGaN, are earth-abundant alternatives for efficient, high-quality optoelectronic devices and solar-energy conversion. The bandgap is tunable almost monotonically from 2 eV (ZnSnN₂) to 3.1 eV (ZnGeN₂) by control of the Sn/Ge ratio.

Original language	English
Pages (from-to)	1235-1241
Number of pages	7
Journal	Advanced Materials
Volume	26
Issue number	8
DOIs	https://doi.org/10.1002/adma.201304473
Publication status	Published - Feb 26 2014

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Keywords

Zn(Sn,Ge)N semiconductor alloys
bandgap
miscibility

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

Cite this

Narang, P., Chen, S., Coronel, N. C., Gul, S., Yano, J., Wang, L. W., Lewis, N. S., & Atwater, H. A. (2014). Bandgap tunability in Zn(Sn,Ge)N₂ semiconductor alloys. Advanced Materials, 26(8), 1235-1241. https://doi.org/10.1002/adma.201304473

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AU - Wang, Lin Wang

AU - Lewis, Nathan S.

AU - Atwater, Harry A.

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Access to Document

10.1002/adma.201304473