Bandgap tunability in Zn(Sn,Ge)N2 semiconductor alloys

Prineha Narang; Shiyou Chen; Naomi C. Coronel; Sheraz Gul; Junko Yano; Lin Wang Wang; Nathan S. Lewis; Harry A. Atwater

doi:10.1002/adma.201304473

Bandgap tunability in Zn(Sn,Ge)N₂ semiconductor alloys

Prineha Narang, Shiyou Chen, Naomi C. Coronel, Sheraz Gul, Junko Yano, Lin Wang Wang, Nathan S. Lewis, Harry A. Atwater

California Institute of Technology

Research output: Contribution to journal › Article

41 Citations (Scopus)

Abstract

ZnSn_1-xGe_xN₂ direct bandgap semiconductor alloys, with a crystal structure and electronic structure similar to InGaN, are earth-abundant alternatives for efficient, high-quality optoelectronic devices and solar-energy conversion. The bandgap is tunable almost monotonically from 2 eV (ZnSnN₂) to 3.1 eV (ZnGeN₂) by control of the Sn/Ge ratio.

Original language	English
Pages (from-to)	1235-1241
Number of pages	7
Journal	Advanced Materials
Volume	26
Issue number	8
DOIs	https://doi.org/10.1002/adma.201304473
Publication status	Published - Feb 26 2014

Keywords

Zn(Sn,Ge)N semiconductor alloys
bandgap
miscibility

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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Narang, P., Chen, S., Coronel, N. C., Gul, S., Yano, J., Wang, L. W., Lewis, N. S., & Atwater, H. A. (2014). Bandgap tunability in Zn(Sn,Ge)N₂ semiconductor alloys. Advanced Materials, 26(8), 1235-1241. https://doi.org/10.1002/adma.201304473

@article{bcb15e05921d4db89b9ec30fd6397f84,

title = "Bandgap tunability in Zn(Sn,Ge)N2 semiconductor alloys",

abstract = "ZnSn1-xGexN2 direct bandgap semiconductor alloys, with a crystal structure and electronic structure similar to InGaN, are earth-abundant alternatives for efficient, high-quality optoelectronic devices and solar-energy conversion. The bandgap is tunable almost monotonically from 2 eV (ZnSnN2) to 3.1 eV (ZnGeN2) by control of the Sn/Ge ratio.",

keywords = "Zn(Sn,Ge)N semiconductor alloys, bandgap, miscibility",

author = "Prineha Narang and Shiyou Chen and Coronel, {Naomi C.} and Sheraz Gul and Junko Yano and Wang, {Lin Wang} and Lewis, {Nathan S.} and Atwater, {Harry A.}",

year = "2014",

month = feb,

day = "26",

doi = "10.1002/adma.201304473",

language = "English",

volume = "26",

pages = "1235--1241",

journal = "Advanced Materials",

issn = "0935-9648",

publisher = "Wiley-VCH Verlag",

number = "8",

}

TY - JOUR

T1 - Bandgap tunability in Zn(Sn,Ge)N2 semiconductor alloys

AU - Narang, Prineha

AU - Chen, Shiyou

AU - Coronel, Naomi C.

AU - Gul, Sheraz

AU - Yano, Junko

AU - Wang, Lin Wang

AU - Lewis, Nathan S.

AU - Atwater, Harry A.

PY - 2014/2/26

Y1 - 2014/2/26

N2 - ZnSn1-xGexN2 direct bandgap semiconductor alloys, with a crystal structure and electronic structure similar to InGaN, are earth-abundant alternatives for efficient, high-quality optoelectronic devices and solar-energy conversion. The bandgap is tunable almost monotonically from 2 eV (ZnSnN2) to 3.1 eV (ZnGeN2) by control of the Sn/Ge ratio.

AB - ZnSn1-xGexN2 direct bandgap semiconductor alloys, with a crystal structure and electronic structure similar to InGaN, are earth-abundant alternatives for efficient, high-quality optoelectronic devices and solar-energy conversion. The bandgap is tunable almost monotonically from 2 eV (ZnSnN2) to 3.1 eV (ZnGeN2) by control of the Sn/Ge ratio.

KW - Zn(Sn,Ge)N semiconductor alloys

KW - bandgap

KW - miscibility

UR - http://www.scopus.com/inward/record.url?scp=84894415151&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84894415151&partnerID=8YFLogxK

U2 - 10.1002/adma.201304473

DO - 10.1002/adma.201304473

M3 - Article

AN - SCOPUS:84894415151

VL - 26

SP - 1235

EP - 1241

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

IS - 8

ER -