Bandgap tunability in Zn(Sn,Ge)N2 semiconductor alloys

Prineha Narang, Shiyou Chen, Naomi C. Coronel, Sheraz Gul, Junko Yano, Lin Wang Wang, Nathan S. Lewis, Harry A. Atwater

Research output: Contribution to journalArticle

37 Citations (Scopus)

Abstract

ZnSn1-xGexN2 direct bandgap semiconductor alloys, with a crystal structure and electronic structure similar to InGaN, are earth-abundant alternatives for efficient, high-quality optoelectronic devices and solar-energy conversion. The bandgap is tunable almost monotonically from 2 eV (ZnSnN2) to 3.1 eV (ZnGeN2) by control of the Sn/Ge ratio.

Original languageEnglish
Pages (from-to)1235-1241
Number of pages7
JournalAdvanced Materials
Volume26
Issue number8
DOIs
Publication statusPublished - Feb 26 2014

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Keywords

  • Zn(Sn,Ge)N semiconductor alloys
  • bandgap
  • miscibility

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Narang, P., Chen, S., Coronel, N. C., Gul, S., Yano, J., Wang, L. W., Lewis, N. S., & Atwater, H. A. (2014). Bandgap tunability in Zn(Sn,Ge)N2 semiconductor alloys. Advanced Materials, 26(8), 1235-1241. https://doi.org/10.1002/adma.201304473