Bandgap tunability in Zn(Sn,Ge)N2 semiconductor alloys

Prineha Narang; Shiyou Chen; Naomi C. Coronel; Sheraz Gul; Junko Yano; Lin Wang Wang; Nathan S. Lewis; Harry A. Atwater

doi:10.1002/adma.201304473

Bandgap tunability in Zn(Sn,Ge)N₂ semiconductor alloys

Prineha Narang, Shiyou Chen, Naomi C. Coronel, Sheraz Gul, Junko Yano, Lin Wang Wang, Nathan S. Lewis, Harry A. Atwater

California Institute of Technology

Research output: Contribution to journal › Article › peer-review

49 Citations (Scopus)

Abstract

ZnSn_1-xGe_xN₂ direct bandgap semiconductor alloys, with a crystal structure and electronic structure similar to InGaN, are earth-abundant alternatives for efficient, high-quality optoelectronic devices and solar-energy conversion. The bandgap is tunable almost monotonically from 2 eV (ZnSnN₂) to 3.1 eV (ZnGeN₂) by control of the Sn/Ge ratio.

Original language	English
Pages (from-to)	1235-1241
Number of pages	7
Journal	Advanced Materials
Volume	26
Issue number	8
DOIs	https://doi.org/10.1002/adma.201304473
Publication status	Published - Feb 26 2014

Keywords

Zn(Sn,Ge)N semiconductor alloys
bandgap
miscibility

ASJC Scopus subject areas

Materials Science(all)
Mechanics of Materials
Mechanical Engineering

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AU - Narang, Prineha

AU - Chen, Shiyou

AU - Coronel, Naomi C.

AU - Gul, Sheraz

AU - Yano, Junko

AU - Wang, Lin Wang

AU - Lewis, Nathan S.

AU - Atwater, Harry A.

PY - 2014/2/26

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N2 - ZnSn1-xGexN2 direct bandgap semiconductor alloys, with a crystal structure and electronic structure similar to InGaN, are earth-abundant alternatives for efficient, high-quality optoelectronic devices and solar-energy conversion. The bandgap is tunable almost monotonically from 2 eV (ZnSnN2) to 3.1 eV (ZnGeN2) by control of the Sn/Ge ratio.

AB - ZnSn1-xGexN2 direct bandgap semiconductor alloys, with a crystal structure and electronic structure similar to InGaN, are earth-abundant alternatives for efficient, high-quality optoelectronic devices and solar-energy conversion. The bandgap is tunable almost monotonically from 2 eV (ZnSnN2) to 3.1 eV (ZnGeN2) by control of the Sn/Ge ratio.

KW - Zn(Sn,Ge)N semiconductor alloys

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KW - miscibility

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