Abstract
ZnSn1-xGexN2 direct bandgap semiconductor alloys, with a crystal structure and electronic structure similar to InGaN, are earth-abundant alternatives for efficient, high-quality optoelectronic devices and solar-energy conversion. The bandgap is tunable almost monotonically from 2 eV (ZnSnN2) to 3.1 eV (ZnGeN2) by control of the Sn/Ge ratio.
Original language | English |
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Pages (from-to) | 1235-1241 |
Number of pages | 7 |
Journal | Advanced Materials |
Volume | 26 |
Issue number | 8 |
DOIs | |
Publication status | Published - Feb 26 2014 |
Keywords
- Zn(Sn,Ge)N semiconductor alloys
- bandgap
- miscibility
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering