Bandgap tunability in Zn(Sn,Ge)N2 semiconductor alloys

Prineha Narang, Shiyou Chen, Naomi C. Coronel, Sheraz Gul, Junko Yano, Lin Wang Wang, Nathan S. Lewis, Harry A. Atwater

Research output: Contribution to journalArticlepeer-review

49 Citations (Scopus)


ZnSn1-xGexN2 direct bandgap semiconductor alloys, with a crystal structure and electronic structure similar to InGaN, are earth-abundant alternatives for efficient, high-quality optoelectronic devices and solar-energy conversion. The bandgap is tunable almost monotonically from 2 eV (ZnSnN2) to 3.1 eV (ZnGeN2) by control of the Sn/Ge ratio.

Original languageEnglish
Pages (from-to)1235-1241
Number of pages7
JournalAdvanced Materials
Issue number8
Publication statusPublished - Feb 26 2014


  • Zn(Sn,Ge)N semiconductor alloys
  • bandgap
  • miscibility

ASJC Scopus subject areas

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

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