ZnSn1-xGexN2 direct bandgap semiconductor alloys, with a crystal structure and electronic structure similar to InGaN, are earth-abundant alternatives for efficient, high-quality optoelectronic devices and solar-energy conversion. The bandgap is tunable almost monotonically from 2 eV (ZnSnN2) to 3.1 eV (ZnGeN2) by control of the Sn/Ge ratio.
- Zn(Sn,Ge)N semiconductor alloys
ASJC Scopus subject areas
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering