Abstract
The SnO2/Pt contact has been investigated using in situ photoelectron spectroscopy and electrical 2-point and 4-point conductivity measurements. A remarkable increase of barrier height from 0.4 eV to 0.9 eV is observed after annealing the as-deposited contact in 0.5 Pa oxygen atmosphere. Subsequent annealing in vacuum reduces the barrier height again. Despite the expected large barrier height, the current-voltage characteristics displays ohmic behavior. The discrepancy between photoemission and electrical behavior is attributed to the polycrystalline nature of the SnO2 film used in this study, leading to an inhomogeneous Schottky barrier height along the surface of polycrystalline specimens.
| Original language | English |
|---|---|
| Pages (from-to) | 3246-3252 |
| Number of pages | 7 |
| Journal | Surface Science |
| Volume | 602 |
| Issue number | 21 |
| DOIs | |
| Publication status | Published - Nov 1 2008 |
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Keywords
- Electrical transport measurement
- Photoelectron spectroscopy
- Platinum
- Schottky barrier
- Tin oxide
ASJC Scopus subject areas
- Surfaces and Interfaces
- Condensed Matter Physics
- Materials Chemistry
- Surfaces, Coatings and Films
Cite this
Barrier heights at the SnO2/Pt interface : In situ photoemission and electrical properties. / Körber, Christoph; Harvey, Steven P.; Mason, Thomas O; Klein, Andreas.
In: Surface Science, Vol. 602, No. 21, 01.11.2008, p. 3246-3252.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Barrier heights at the SnO2/Pt interface
T2 - In situ photoemission and electrical properties
AU - Körber, Christoph
AU - Harvey, Steven P.
AU - Mason, Thomas O
AU - Klein, Andreas
PY - 2008/11/1
Y1 - 2008/11/1
N2 - The SnO2/Pt contact has been investigated using in situ photoelectron spectroscopy and electrical 2-point and 4-point conductivity measurements. A remarkable increase of barrier height from 0.4 eV to 0.9 eV is observed after annealing the as-deposited contact in 0.5 Pa oxygen atmosphere. Subsequent annealing in vacuum reduces the barrier height again. Despite the expected large barrier height, the current-voltage characteristics displays ohmic behavior. The discrepancy between photoemission and electrical behavior is attributed to the polycrystalline nature of the SnO2 film used in this study, leading to an inhomogeneous Schottky barrier height along the surface of polycrystalline specimens.
AB - The SnO2/Pt contact has been investigated using in situ photoelectron spectroscopy and electrical 2-point and 4-point conductivity measurements. A remarkable increase of barrier height from 0.4 eV to 0.9 eV is observed after annealing the as-deposited contact in 0.5 Pa oxygen atmosphere. Subsequent annealing in vacuum reduces the barrier height again. Despite the expected large barrier height, the current-voltage characteristics displays ohmic behavior. The discrepancy between photoemission and electrical behavior is attributed to the polycrystalline nature of the SnO2 film used in this study, leading to an inhomogeneous Schottky barrier height along the surface of polycrystalline specimens.
KW - Electrical transport measurement
KW - Photoelectron spectroscopy
KW - Platinum
KW - Schottky barrier
KW - Tin oxide
UR - http://www.scopus.com/inward/record.url?scp=54249086540&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=54249086540&partnerID=8YFLogxK
U2 - 10.1016/j.susc.2008.08.015
DO - 10.1016/j.susc.2008.08.015
M3 - Article
AN - SCOPUS:54249086540
VL - 602
SP - 3246
EP - 3252
JO - Surface Science
JF - Surface Science
SN - 0039-6028
IS - 21
ER -