Barrier heights at the SnO2/Pt interface: In situ photoemission and electrical properties

Christoph Körber; Steven P. Harvey; Thomas O. Mason; Andreas Klein

doi:10.1016/j.susc.2008.08.015

Barrier heights at the SnO₂/Pt interface: In situ photoemission and electrical properties

Christoph Körber, Steven P. Harvey, Thomas O. Mason, Andreas Klein

Northwestern University

Research output: Contribution to journal › Article › peer-review

48 Citations (Scopus)

Abstract

The SnO₂/Pt contact has been investigated using in situ photoelectron spectroscopy and electrical 2-point and 4-point conductivity measurements. A remarkable increase of barrier height from 0.4 eV to 0.9 eV is observed after annealing the as-deposited contact in 0.5 Pa oxygen atmosphere. Subsequent annealing in vacuum reduces the barrier height again. Despite the expected large barrier height, the current-voltage characteristics displays ohmic behavior. The discrepancy between photoemission and electrical behavior is attributed to the polycrystalline nature of the SnO₂ film used in this study, leading to an inhomogeneous Schottky barrier height along the surface of polycrystalline specimens.

Original language	English
Pages (from-to)	3246-3252
Number of pages	7
Journal	Surface Science
Volume	602
Issue number	21
DOIs	https://doi.org/10.1016/j.susc.2008.08.015
Publication status	Published - Nov 1 2008

Keywords

Electrical transport measurement
Photoelectron spectroscopy
Platinum
Schottky barrier
Tin oxide

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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title = "Barrier heights at the SnO2/Pt interface: In situ photoemission and electrical properties",

abstract = "The SnO2/Pt contact has been investigated using in situ photoelectron spectroscopy and electrical 2-point and 4-point conductivity measurements. A remarkable increase of barrier height from 0.4 eV to 0.9 eV is observed after annealing the as-deposited contact in 0.5 Pa oxygen atmosphere. Subsequent annealing in vacuum reduces the barrier height again. Despite the expected large barrier height, the current-voltage characteristics displays ohmic behavior. The discrepancy between photoemission and electrical behavior is attributed to the polycrystalline nature of the SnO2 film used in this study, leading to an inhomogeneous Schottky barrier height along the surface of polycrystalline specimens.",

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T2 - In situ photoemission and electrical properties

AU - Körber, Christoph

AU - Harvey, Steven P.

AU - Mason, Thomas O.

AU - Klein, Andreas

PY - 2008/11/1

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N2 - The SnO2/Pt contact has been investigated using in situ photoelectron spectroscopy and electrical 2-point and 4-point conductivity measurements. A remarkable increase of barrier height from 0.4 eV to 0.9 eV is observed after annealing the as-deposited contact in 0.5 Pa oxygen atmosphere. Subsequent annealing in vacuum reduces the barrier height again. Despite the expected large barrier height, the current-voltage characteristics displays ohmic behavior. The discrepancy between photoemission and electrical behavior is attributed to the polycrystalline nature of the SnO2 film used in this study, leading to an inhomogeneous Schottky barrier height along the surface of polycrystalline specimens.

AB - The SnO2/Pt contact has been investigated using in situ photoelectron spectroscopy and electrical 2-point and 4-point conductivity measurements. A remarkable increase of barrier height from 0.4 eV to 0.9 eV is observed after annealing the as-deposited contact in 0.5 Pa oxygen atmosphere. Subsequent annealing in vacuum reduces the barrier height again. Despite the expected large barrier height, the current-voltage characteristics displays ohmic behavior. The discrepancy between photoemission and electrical behavior is attributed to the polycrystalline nature of the SnO2 film used in this study, leading to an inhomogeneous Schottky barrier height along the surface of polycrystalline specimens.

KW - Electrical transport measurement

KW - Photoelectron spectroscopy

KW - Platinum

KW - Schottky barrier

KW - Tin oxide

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