Ba4in8Sb16

Thermoelectric properties of a new layered zintl phase with infinite Zigzag Sb chains and pentagonal tubes

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Abstract

A new Zintl phase Ba4In8Sb16 was obtained from a direct element combination reaction of the elements in a sealed graphite tube at 700°C, and its structure was determined by single-crystal X-ray diffraction methods. It crystallizes in the orthorhombic space group Pnma (No. 62) with a = 10.166(3) Å, b = 4.5239(14) Å, c = 19.495(6) Å, and Z = 1. Ba4In8Sb16 has a two-dimensional structure with thick corrugated (In8Sb16)8- layers separated by Ba2+ ions. In the layer, InSb4 tetrahedra are connected by sharing three corners and by bridging the fourth corner in such a manner that infinite pentagonal tubes are formed. The compound is a narrow band gap (∼ 0.10 eV) semiconductor and satisfies the classical Zintl rule. Band structure calculations confirm that the material is a semiconductor and indicate that it has optimized In-Sb bonding interactions. Polycrystalline ingots of Ba4In8Sb16 show room-temperature electrical conductivity of 135 S/cm and a Seebeck coefficient of 70 μV/K. The thermal conductivity of Ba4In8Sb16 is about 1.7 W/m·K in the temperature range 150-300 K.

Original languageEnglish
Pages (from-to)3154-3159
Number of pages6
JournalChemistry of Materials
Volume11
Issue number11
Publication statusPublished - 1999

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Semiconductor materials
Seebeck coefficient
Graphite
Ingots
Band structure
Thermal conductivity
Energy gap
Single crystals
Ions
X ray diffraction
Temperature
Electric Conductivity

ASJC Scopus subject areas

  • Materials Chemistry
  • Materials Science(all)

Cite this

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title = "Ba4in8Sb16: Thermoelectric properties of a new layered zintl phase with infinite Zigzag Sb chains and pentagonal tubes",
abstract = "A new Zintl phase Ba4In8Sb16 was obtained from a direct element combination reaction of the elements in a sealed graphite tube at 700°C, and its structure was determined by single-crystal X-ray diffraction methods. It crystallizes in the orthorhombic space group Pnma (No. 62) with a = 10.166(3) {\AA}, b = 4.5239(14) {\AA}, c = 19.495(6) {\AA}, and Z = 1. Ba4In8Sb16 has a two-dimensional structure with thick corrugated (In8Sb16)8- layers separated by Ba2+ ions. In the layer, InSb4 tetrahedra are connected by sharing three corners and by bridging the fourth corner in such a manner that infinite pentagonal tubes are formed. The compound is a narrow band gap (∼ 0.10 eV) semiconductor and satisfies the classical Zintl rule. Band structure calculations confirm that the material is a semiconductor and indicate that it has optimized In-Sb bonding interactions. Polycrystalline ingots of Ba4In8Sb16 show room-temperature electrical conductivity of 135 S/cm and a Seebeck coefficient of 70 μV/K. The thermal conductivity of Ba4In8Sb16 is about 1.7 W/m·K in the temperature range 150-300 K.",
author = "Kanatzidis, {Mercouri G}",
year = "1999",
language = "English",
volume = "11",
pages = "3154--3159",
journal = "Chemistry of Materials",
issn = "0897-4756",
publisher = "American Chemical Society",
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N2 - A new Zintl phase Ba4In8Sb16 was obtained from a direct element combination reaction of the elements in a sealed graphite tube at 700°C, and its structure was determined by single-crystal X-ray diffraction methods. It crystallizes in the orthorhombic space group Pnma (No. 62) with a = 10.166(3) Å, b = 4.5239(14) Å, c = 19.495(6) Å, and Z = 1. Ba4In8Sb16 has a two-dimensional structure with thick corrugated (In8Sb16)8- layers separated by Ba2+ ions. In the layer, InSb4 tetrahedra are connected by sharing three corners and by bridging the fourth corner in such a manner that infinite pentagonal tubes are formed. The compound is a narrow band gap (∼ 0.10 eV) semiconductor and satisfies the classical Zintl rule. Band structure calculations confirm that the material is a semiconductor and indicate that it has optimized In-Sb bonding interactions. Polycrystalline ingots of Ba4In8Sb16 show room-temperature electrical conductivity of 135 S/cm and a Seebeck coefficient of 70 μV/K. The thermal conductivity of Ba4In8Sb16 is about 1.7 W/m·K in the temperature range 150-300 K.

AB - A new Zintl phase Ba4In8Sb16 was obtained from a direct element combination reaction of the elements in a sealed graphite tube at 700°C, and its structure was determined by single-crystal X-ray diffraction methods. It crystallizes in the orthorhombic space group Pnma (No. 62) with a = 10.166(3) Å, b = 4.5239(14) Å, c = 19.495(6) Å, and Z = 1. Ba4In8Sb16 has a two-dimensional structure with thick corrugated (In8Sb16)8- layers separated by Ba2+ ions. In the layer, InSb4 tetrahedra are connected by sharing three corners and by bridging the fourth corner in such a manner that infinite pentagonal tubes are formed. The compound is a narrow band gap (∼ 0.10 eV) semiconductor and satisfies the classical Zintl rule. Band structure calculations confirm that the material is a semiconductor and indicate that it has optimized In-Sb bonding interactions. Polycrystalline ingots of Ba4In8Sb16 show room-temperature electrical conductivity of 135 S/cm and a Seebeck coefficient of 70 μV/K. The thermal conductivity of Ba4In8Sb16 is about 1.7 W/m·K in the temperature range 150-300 K.

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