Behavior of electrodeposited cd and pb schottky junctions on C H3 -Terminated n-Si(111) Surfaces

Stephen Maldonado, Nathan S Lewis

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

n-SiCd and n-SiPb Schottky junctions have been prepared by electrodeposition of Cd or Pb from acidic aqueous solutions onto H-terminated and C H3 -terminated n-type Si(111) surfaces. For both nondegenerately (n-) and degenerately (n+ -) doped H-Si(111) electrodes, Cd and Pb were readily electroplated and oxidatively stripped, consistent with a small barrier height (b) at the Si/solution and the Si/metal junctions. Electrodeposition of Cd or Pb onto degenerately doped C H3 -terminated n+ -Si (111) electrodes occurred at the same potentials as Cd or Pd electrodeposition onto H-terminated n+ -Si (111). However, electrodeposition on nondegenerately doped C H3 -terminated n-Si(111) surfaces was significantly shifted to more negative applied potentials (by -130 and -347 mV, respectively), and the anodic stripping of the electrodeposited metals was severely attenuated, indicating large values of b for contacts on nondegenerately doped n-type C H3 -Si (111) surfaces. With either Cd or Pb, current-voltage measurements on the dry, electrodeposited Schottky junctions indicated that much larger values of b were obtained on C H3 -terminated n-Si(111) surfaces than on H-terminated n-Si(111) surfaces. Chronoamperometric data indicated that C H3 -Si (111) surfaces possessed an order-of-magnitude lower density of nucleation sites for metal electrodeposition than did H-Si(111) surfaces, attesting to the high degree of structural passivation afforded by the C H3 -Si surface modification.

Original languageEnglish
JournalJournal of the Electrochemical Society
Volume156
Issue number2
DOIs
Publication statusPublished - 2009

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Electrodeposition
electrodeposition
Metals
anodic stripping
metals
Electrodes
Voltage measurement
Electric current measurement
electrodes
Passivation
Surface treatment
electrical measurement
passivity
Nucleation
nucleation
aqueous solutions

ASJC Scopus subject areas

  • Electrochemistry
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Surfaces, Coatings and Films
  • Renewable Energy, Sustainability and the Environment
  • Condensed Matter Physics

Cite this

Behavior of electrodeposited cd and pb schottky junctions on C H3 -Terminated n-Si(111) Surfaces. / Maldonado, Stephen; Lewis, Nathan S.

In: Journal of the Electrochemical Society, Vol. 156, No. 2, 2009.

Research output: Contribution to journalArticle

@article{dfd0799e6b46462ea8629d92eca85e5f,
title = "Behavior of electrodeposited cd and pb schottky junctions on C H3 -Terminated n-Si(111) Surfaces",
abstract = "n-SiCd and n-SiPb Schottky junctions have been prepared by electrodeposition of Cd or Pb from acidic aqueous solutions onto H-terminated and C H3 -terminated n-type Si(111) surfaces. For both nondegenerately (n-) and degenerately (n+ -) doped H-Si(111) electrodes, Cd and Pb were readily electroplated and oxidatively stripped, consistent with a small barrier height (b) at the Si/solution and the Si/metal junctions. Electrodeposition of Cd or Pb onto degenerately doped C H3 -terminated n+ -Si (111) electrodes occurred at the same potentials as Cd or Pd electrodeposition onto H-terminated n+ -Si (111). However, electrodeposition on nondegenerately doped C H3 -terminated n-Si(111) surfaces was significantly shifted to more negative applied potentials (by -130 and -347 mV, respectively), and the anodic stripping of the electrodeposited metals was severely attenuated, indicating large values of b for contacts on nondegenerately doped n-type C H3 -Si (111) surfaces. With either Cd or Pb, current-voltage measurements on the dry, electrodeposited Schottky junctions indicated that much larger values of b were obtained on C H3 -terminated n-Si(111) surfaces than on H-terminated n-Si(111) surfaces. Chronoamperometric data indicated that C H3 -Si (111) surfaces possessed an order-of-magnitude lower density of nucleation sites for metal electrodeposition than did H-Si(111) surfaces, attesting to the high degree of structural passivation afforded by the C H3 -Si surface modification.",
author = "Stephen Maldonado and Lewis, {Nathan S}",
year = "2009",
doi = "10.1149/1.3021450",
language = "English",
volume = "156",
journal = "Journal of the Electrochemical Society",
issn = "0013-4651",
publisher = "Electrochemical Society, Inc.",
number = "2",

}

TY - JOUR

T1 - Behavior of electrodeposited cd and pb schottky junctions on C H3 -Terminated n-Si(111) Surfaces

AU - Maldonado, Stephen

AU - Lewis, Nathan S

PY - 2009

Y1 - 2009

N2 - n-SiCd and n-SiPb Schottky junctions have been prepared by electrodeposition of Cd or Pb from acidic aqueous solutions onto H-terminated and C H3 -terminated n-type Si(111) surfaces. For both nondegenerately (n-) and degenerately (n+ -) doped H-Si(111) electrodes, Cd and Pb were readily electroplated and oxidatively stripped, consistent with a small barrier height (b) at the Si/solution and the Si/metal junctions. Electrodeposition of Cd or Pb onto degenerately doped C H3 -terminated n+ -Si (111) electrodes occurred at the same potentials as Cd or Pd electrodeposition onto H-terminated n+ -Si (111). However, electrodeposition on nondegenerately doped C H3 -terminated n-Si(111) surfaces was significantly shifted to more negative applied potentials (by -130 and -347 mV, respectively), and the anodic stripping of the electrodeposited metals was severely attenuated, indicating large values of b for contacts on nondegenerately doped n-type C H3 -Si (111) surfaces. With either Cd or Pb, current-voltage measurements on the dry, electrodeposited Schottky junctions indicated that much larger values of b were obtained on C H3 -terminated n-Si(111) surfaces than on H-terminated n-Si(111) surfaces. Chronoamperometric data indicated that C H3 -Si (111) surfaces possessed an order-of-magnitude lower density of nucleation sites for metal electrodeposition than did H-Si(111) surfaces, attesting to the high degree of structural passivation afforded by the C H3 -Si surface modification.

AB - n-SiCd and n-SiPb Schottky junctions have been prepared by electrodeposition of Cd or Pb from acidic aqueous solutions onto H-terminated and C H3 -terminated n-type Si(111) surfaces. For both nondegenerately (n-) and degenerately (n+ -) doped H-Si(111) electrodes, Cd and Pb were readily electroplated and oxidatively stripped, consistent with a small barrier height (b) at the Si/solution and the Si/metal junctions. Electrodeposition of Cd or Pb onto degenerately doped C H3 -terminated n+ -Si (111) electrodes occurred at the same potentials as Cd or Pd electrodeposition onto H-terminated n+ -Si (111). However, electrodeposition on nondegenerately doped C H3 -terminated n-Si(111) surfaces was significantly shifted to more negative applied potentials (by -130 and -347 mV, respectively), and the anodic stripping of the electrodeposited metals was severely attenuated, indicating large values of b for contacts on nondegenerately doped n-type C H3 -Si (111) surfaces. With either Cd or Pb, current-voltage measurements on the dry, electrodeposited Schottky junctions indicated that much larger values of b were obtained on C H3 -terminated n-Si(111) surfaces than on H-terminated n-Si(111) surfaces. Chronoamperometric data indicated that C H3 -Si (111) surfaces possessed an order-of-magnitude lower density of nucleation sites for metal electrodeposition than did H-Si(111) surfaces, attesting to the high degree of structural passivation afforded by the C H3 -Si surface modification.

UR - http://www.scopus.com/inward/record.url?scp=58049125493&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=58049125493&partnerID=8YFLogxK

U2 - 10.1149/1.3021450

DO - 10.1149/1.3021450

M3 - Article

AN - SCOPUS:58049125493

VL - 156

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

SN - 0013-4651

IS - 2

ER -