Behavior of Si photoelectrodes under high level injection conditions. 2. Experimental measurements and digital simulations of the behavior of quasi-Fermi levels under illumination and applied bias

Olaf Krüger, C. N. Kenyon, Ming X. Tan, Nathan S Lewis

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15 Citations (Scopus)

Abstract

Use of thin, nearly intrinsically doped Si electrodes having implanted, interdigitated n+ and p+ back contact points has allowed electrical control over the potential of either electrons or holes in the solid. During potential control at the n+ point contacts, the open-circuit potential of holes could be monitored, while during potential control of the p+ point contacts, the open-circuit potential of electrons was measured. In combination with current density-voltage measurements of either electrons or holes passing through the back contact points, these data allowed a comparison of the behavior of a given carrier type when generated by an applied bias (i.e., as majority carriers) relative to their behavior when generated with band gap illumination of the solid (as minority carriers). Data have been collected for Si/CH3OH junctions having 1,1′-dimethylferrocene+/0, decamethylferrocene+/0, methyl viologen2+/+, and cobaltocene+/0 as redox couples. These data have been used to validate certain key predictions of the quasi-Fermi level concept in photoelectrochemistry. In addition, digital simulations that include two-dimensional representations of the charge density distribution and of the current fluxes in the solid have been utilized to provide a quantitative understanding of the observed experimental behavior.

Original languageEnglish
Pages (from-to)2840-2849
Number of pages10
JournalJournal of Physical Chemistry B
Volume101
Issue number15
Publication statusPublished - Apr 10 1997

Fingerprint

digital simulation
Point contacts
Fermi level
Lighting
illumination
injection
Electrons
simulation
photoelectrochemistry
Networks (circuits)
Voltage measurement
Charge density
majority carriers
electrons
minority carriers
Energy gap
Current density
electrical measurement
density distribution
Fluxes

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry

Cite this

@article{adef37afd15f4817beb18277e5315364,
title = "Behavior of Si photoelectrodes under high level injection conditions. 2. Experimental measurements and digital simulations of the behavior of quasi-Fermi levels under illumination and applied bias",
abstract = "Use of thin, nearly intrinsically doped Si electrodes having implanted, interdigitated n+ and p+ back contact points has allowed electrical control over the potential of either electrons or holes in the solid. During potential control at the n+ point contacts, the open-circuit potential of holes could be monitored, while during potential control of the p+ point contacts, the open-circuit potential of electrons was measured. In combination with current density-voltage measurements of either electrons or holes passing through the back contact points, these data allowed a comparison of the behavior of a given carrier type when generated by an applied bias (i.e., as majority carriers) relative to their behavior when generated with band gap illumination of the solid (as minority carriers). Data have been collected for Si/CH3OH junctions having 1,1′-dimethylferrocene+/0, decamethylferrocene+/0, methyl viologen2+/+, and cobaltocene+/0 as redox couples. These data have been used to validate certain key predictions of the quasi-Fermi level concept in photoelectrochemistry. In addition, digital simulations that include two-dimensional representations of the charge density distribution and of the current fluxes in the solid have been utilized to provide a quantitative understanding of the observed experimental behavior.",
author = "Olaf Kr{\"u}ger and Kenyon, {C. N.} and Tan, {Ming X.} and Lewis, {Nathan S}",
year = "1997",
month = "4",
day = "10",
language = "English",
volume = "101",
pages = "2840--2849",
journal = "Journal of Physical Chemistry B Materials",
issn = "1520-6106",
publisher = "American Chemical Society",
number = "15",

}

TY - JOUR

T1 - Behavior of Si photoelectrodes under high level injection conditions. 2. Experimental measurements and digital simulations of the behavior of quasi-Fermi levels under illumination and applied bias

AU - Krüger, Olaf

AU - Kenyon, C. N.

AU - Tan, Ming X.

AU - Lewis, Nathan S

PY - 1997/4/10

Y1 - 1997/4/10

N2 - Use of thin, nearly intrinsically doped Si electrodes having implanted, interdigitated n+ and p+ back contact points has allowed electrical control over the potential of either electrons or holes in the solid. During potential control at the n+ point contacts, the open-circuit potential of holes could be monitored, while during potential control of the p+ point contacts, the open-circuit potential of electrons was measured. In combination with current density-voltage measurements of either electrons or holes passing through the back contact points, these data allowed a comparison of the behavior of a given carrier type when generated by an applied bias (i.e., as majority carriers) relative to their behavior when generated with band gap illumination of the solid (as minority carriers). Data have been collected for Si/CH3OH junctions having 1,1′-dimethylferrocene+/0, decamethylferrocene+/0, methyl viologen2+/+, and cobaltocene+/0 as redox couples. These data have been used to validate certain key predictions of the quasi-Fermi level concept in photoelectrochemistry. In addition, digital simulations that include two-dimensional representations of the charge density distribution and of the current fluxes in the solid have been utilized to provide a quantitative understanding of the observed experimental behavior.

AB - Use of thin, nearly intrinsically doped Si electrodes having implanted, interdigitated n+ and p+ back contact points has allowed electrical control over the potential of either electrons or holes in the solid. During potential control at the n+ point contacts, the open-circuit potential of holes could be monitored, while during potential control of the p+ point contacts, the open-circuit potential of electrons was measured. In combination with current density-voltage measurements of either electrons or holes passing through the back contact points, these data allowed a comparison of the behavior of a given carrier type when generated by an applied bias (i.e., as majority carriers) relative to their behavior when generated with band gap illumination of the solid (as minority carriers). Data have been collected for Si/CH3OH junctions having 1,1′-dimethylferrocene+/0, decamethylferrocene+/0, methyl viologen2+/+, and cobaltocene+/0 as redox couples. These data have been used to validate certain key predictions of the quasi-Fermi level concept in photoelectrochemistry. In addition, digital simulations that include two-dimensional representations of the charge density distribution and of the current fluxes in the solid have been utilized to provide a quantitative understanding of the observed experimental behavior.

UR - http://www.scopus.com/inward/record.url?scp=0039732489&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0039732489&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0039732489

VL - 101

SP - 2840

EP - 2849

JO - Journal of Physical Chemistry B Materials

JF - Journal of Physical Chemistry B Materials

SN - 1520-6106

IS - 15

ER -