Bi-epitaxial grain boundaries in YBa2Cu3O7-x thin films prepared by pulsed laser deposition and pulsed organometallic beam epitaxy: Direct comparison of transport properties and grain boundary structure

Boris Vuchic, K. L. Merkle, K. Char, D. B. Buchholz, Robert P. H. Chang, L. D. Marks

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

A set of 45° [001] bi-epitaxial YB2Cu3O7-x thin film grain boundaries was studied to compare the effects of the microstructure on transport properties. The grain boundaries were made using two different deposition techniques: pulsed laser deposition (PLD) and pulsed organometallic beam epitaxy (POMBE). The transport properties were highly dependent on the specific growth conditions used, resulting in both fully resistive and superconducting grain boundaries. Subsequent microstructural analysis of the measured boundaries showed that both types (superconducting and resistive) meandered on the length scale of hundreds of nanometers. The major structural difference between the boundaries was at the atomic scale where the resistive boundary had a 1 nm wide disordered region. The direct correlation of microstructure to transport properties demonstrates the importance of the atomic scale structure in the resulting transport behavior.

Original languageEnglish
Pages (from-to)2429-2439
Number of pages11
JournalJournal of Materials Research
Volume11
Issue number10
Publication statusPublished - Oct 1996

Fingerprint

Organometallics
Pulsed laser deposition
Epitaxial growth
Transport properties
epitaxy
pulsed laser deposition
Grain boundaries
grain boundaries
transport properties
Thin films
thin films
microstructure
Microstructure
barium copper yttrium oxide

ASJC Scopus subject areas

  • Materials Science(all)

Cite this

Bi-epitaxial grain boundaries in YBa2Cu3O7-x thin films prepared by pulsed laser deposition and pulsed organometallic beam epitaxy : Direct comparison of transport properties and grain boundary structure. / Vuchic, Boris; Merkle, K. L.; Char, K.; Buchholz, D. B.; Chang, Robert P. H.; Marks, L. D.

In: Journal of Materials Research, Vol. 11, No. 10, 10.1996, p. 2429-2439.

Research output: Contribution to journalArticle

@article{cbe2fffd96c142868c8e238e1b13b7b0,
title = "Bi-epitaxial grain boundaries in YBa2Cu3O7-x thin films prepared by pulsed laser deposition and pulsed organometallic beam epitaxy: Direct comparison of transport properties and grain boundary structure",
abstract = "A set of 45° [001] bi-epitaxial YB2Cu3O7-x thin film grain boundaries was studied to compare the effects of the microstructure on transport properties. The grain boundaries were made using two different deposition techniques: pulsed laser deposition (PLD) and pulsed organometallic beam epitaxy (POMBE). The transport properties were highly dependent on the specific growth conditions used, resulting in both fully resistive and superconducting grain boundaries. Subsequent microstructural analysis of the measured boundaries showed that both types (superconducting and resistive) meandered on the length scale of hundreds of nanometers. The major structural difference between the boundaries was at the atomic scale where the resistive boundary had a 1 nm wide disordered region. The direct correlation of microstructure to transport properties demonstrates the importance of the atomic scale structure in the resulting transport behavior.",
author = "Boris Vuchic and Merkle, {K. L.} and K. Char and Buchholz, {D. B.} and Chang, {Robert P. H.} and Marks, {L. D.}",
year = "1996",
month = "10",
language = "English",
volume = "11",
pages = "2429--2439",
journal = "Journal of Materials Research",
issn = "0884-2914",
publisher = "Materials Research Society",
number = "10",

}

TY - JOUR

T1 - Bi-epitaxial grain boundaries in YBa2Cu3O7-x thin films prepared by pulsed laser deposition and pulsed organometallic beam epitaxy

T2 - Direct comparison of transport properties and grain boundary structure

AU - Vuchic, Boris

AU - Merkle, K. L.

AU - Char, K.

AU - Buchholz, D. B.

AU - Chang, Robert P. H.

AU - Marks, L. D.

PY - 1996/10

Y1 - 1996/10

N2 - A set of 45° [001] bi-epitaxial YB2Cu3O7-x thin film grain boundaries was studied to compare the effects of the microstructure on transport properties. The grain boundaries were made using two different deposition techniques: pulsed laser deposition (PLD) and pulsed organometallic beam epitaxy (POMBE). The transport properties were highly dependent on the specific growth conditions used, resulting in both fully resistive and superconducting grain boundaries. Subsequent microstructural analysis of the measured boundaries showed that both types (superconducting and resistive) meandered on the length scale of hundreds of nanometers. The major structural difference between the boundaries was at the atomic scale where the resistive boundary had a 1 nm wide disordered region. The direct correlation of microstructure to transport properties demonstrates the importance of the atomic scale structure in the resulting transport behavior.

AB - A set of 45° [001] bi-epitaxial YB2Cu3O7-x thin film grain boundaries was studied to compare the effects of the microstructure on transport properties. The grain boundaries were made using two different deposition techniques: pulsed laser deposition (PLD) and pulsed organometallic beam epitaxy (POMBE). The transport properties were highly dependent on the specific growth conditions used, resulting in both fully resistive and superconducting grain boundaries. Subsequent microstructural analysis of the measured boundaries showed that both types (superconducting and resistive) meandered on the length scale of hundreds of nanometers. The major structural difference between the boundaries was at the atomic scale where the resistive boundary had a 1 nm wide disordered region. The direct correlation of microstructure to transport properties demonstrates the importance of the atomic scale structure in the resulting transport behavior.

UR - http://www.scopus.com/inward/record.url?scp=0030258546&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0030258546&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0030258546

VL - 11

SP - 2429

EP - 2439

JO - Journal of Materials Research

JF - Journal of Materials Research

SN - 0884-2914

IS - 10

ER -