Bi-epitaxial grain boundaries in YBa2Cu3O7-x thin films prepared by pulsed laser deposition and pulsed organometallic beam epitaxy: Direct comparison of transport properties and grain boundary structure

Boris Vuchic, K. L. Merkle, K. Char, D. B. Buchholz, Robert P. H. Chang, L. D. Marks

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Abstract

A set of 45° [001] bi-epitaxial YB2Cu3O7-x thin film grain boundaries was studied to compare the effects of the microstructure on transport properties. The grain boundaries were made using two different deposition techniques: pulsed laser deposition (PLD) and pulsed organometallic beam epitaxy (POMBE). The transport properties were highly dependent on the specific growth conditions used, resulting in both fully resistive and superconducting grain boundaries. Subsequent microstructural analysis of the measured boundaries showed that both types (superconducting and resistive) meandered on the length scale of hundreds of nanometers. The major structural difference between the boundaries was at the atomic scale where the resistive boundary had a 1 nm wide disordered region. The direct correlation of microstructure to transport properties demonstrates the importance of the atomic scale structure in the resulting transport behavior.

Original languageEnglish
Pages (from-to)2429-2439
Number of pages11
JournalJournal of Materials Research
Volume11
Issue number10
Publication statusPublished - Oct 1996

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ASJC Scopus subject areas

  • Materials Science(all)

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