Bis[di(2,2,2-trifluoroethyl)dithiocarbamato]-CuII

A volatile precursor for the efficient growth of cuprous sulfide films by MOCVD

Matthew N. McCain, Andrew W. Metz, Yu Yang, Charlotte L. Stern, Tobin J Marks

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The synthesis and characterization of bis-[2,2,2-trifluoroethyl) dithiocarbamato]copper(II) and its implementation as an effective precursor for cuprous sulfide film growth was studied. The compound was synthesized via the one-pot reaction of NaN(CH2CF3)2, CS 2 and CuCl2 2H2O in ether under N2. The volatility characteristics of the compound were analyzed and compared to those of Cu[S2CN(CH2Ch3)2] 2 using reduced-pressure thermogravimetric analysis. The compound was shown to exhibit greatly improved volatility and cab be used for the growth of high-quality cuprous sulfide films on amorphous glass substrates.

Original languageEnglish
Pages (from-to)291-294
Number of pages4
JournalChemical Vapor Deposition
Volume11
Issue number6-7
DOIs
Publication statusPublished - Jul 2005

Fingerprint

volatility
Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
sulfides
Film growth
Ether
Thermogravimetric analysis
Copper
Ethers
ethers
Glass
copper
glass
Substrates
synthesis
cuprous sulfide
Sulfides
cupric chloride

ASJC Scopus subject areas

  • Electrochemistry
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

Cite this

Bis[di(2,2,2-trifluoroethyl)dithiocarbamato]-CuII : A volatile precursor for the efficient growth of cuprous sulfide films by MOCVD. / McCain, Matthew N.; Metz, Andrew W.; Yang, Yu; Stern, Charlotte L.; Marks, Tobin J.

In: Chemical Vapor Deposition, Vol. 11, No. 6-7, 07.2005, p. 291-294.

Research output: Contribution to journalArticle

McCain, Matthew N. ; Metz, Andrew W. ; Yang, Yu ; Stern, Charlotte L. ; Marks, Tobin J. / Bis[di(2,2,2-trifluoroethyl)dithiocarbamato]-CuII : A volatile precursor for the efficient growth of cuprous sulfide films by MOCVD. In: Chemical Vapor Deposition. 2005 ; Vol. 11, No. 6-7. pp. 291-294.
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