TY - JOUR
T1 - Bis[di(2,2,2-trifluoroethyl)dithiocarbamato]-CuII
T2 - A volatile precursor for the efficient growth of cuprous sulfide films by MOCVD
AU - McCain, Matthew N.
AU - Metz, Andrew W.
AU - Yang, Yu
AU - Stern, Charlotte L.
AU - Marks, Tobin J.
PY - 2005/7
Y1 - 2005/7
N2 - The synthesis and characterization of bis-[2,2,2-trifluoroethyl) dithiocarbamato]copper(II) and its implementation as an effective precursor for cuprous sulfide film growth was studied. The compound was synthesized via the one-pot reaction of NaN(CH2CF3)2, CS 2 and CuCl2 2H2O in ether under N2. The volatility characteristics of the compound were analyzed and compared to those of Cu[S2CN(CH2Ch3)2] 2 using reduced-pressure thermogravimetric analysis. The compound was shown to exhibit greatly improved volatility and cab be used for the growth of high-quality cuprous sulfide films on amorphous glass substrates.
AB - The synthesis and characterization of bis-[2,2,2-trifluoroethyl) dithiocarbamato]copper(II) and its implementation as an effective precursor for cuprous sulfide film growth was studied. The compound was synthesized via the one-pot reaction of NaN(CH2CF3)2, CS 2 and CuCl2 2H2O in ether under N2. The volatility characteristics of the compound were analyzed and compared to those of Cu[S2CN(CH2Ch3)2] 2 using reduced-pressure thermogravimetric analysis. The compound was shown to exhibit greatly improved volatility and cab be used for the growth of high-quality cuprous sulfide films on amorphous glass substrates.
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U2 - 10.1002/cvde.200404200
DO - 10.1002/cvde.200404200
M3 - Article
AN - SCOPUS:22944443578
VL - 11
SP - 291
EP - 294
JO - Chemical Vapor Deposition
JF - Chemical Vapor Deposition
SN - 0948-1907
IS - 6-7
ER -