Abstract
The synthesis and characterization of bis-[2,2,2-trifluoroethyl) dithiocarbamato]copper(II) and its implementation as an effective precursor for cuprous sulfide film growth was studied. The compound was synthesized via the one-pot reaction of NaN(CH2CF3)2, CS 2 and CuCl2 2H2O in ether under N2. The volatility characteristics of the compound were analyzed and compared to those of Cu[S2CN(CH2Ch3)2] 2 using reduced-pressure thermogravimetric analysis. The compound was shown to exhibit greatly improved volatility and cab be used for the growth of high-quality cuprous sulfide films on amorphous glass substrates.
| Original language | English |
|---|---|
| Pages (from-to) | 291-294 |
| Number of pages | 4 |
| Journal | Chemical Vapor Deposition |
| Volume | 11 |
| Issue number | 6-7 |
| DOIs | |
| Publication status | Published - Jul 2005 |
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ASJC Scopus subject areas
- Electrochemistry
- Process Chemistry and Technology
- Surfaces, Coatings and Films
- Surfaces and Interfaces
- Condensed Matter Physics
- Electronic, Optical and Magnetic Materials
Cite this
Bis[di(2,2,2-trifluoroethyl)dithiocarbamato]-CuII : A volatile precursor for the efficient growth of cuprous sulfide films by MOCVD. / McCain, Matthew N.; Metz, Andrew W.; Yang, Yu; Stern, Charlotte L.; Marks, Tobin J.
In: Chemical Vapor Deposition, Vol. 11, No. 6-7, 07.2005, p. 291-294.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Bis[di(2,2,2-trifluoroethyl)dithiocarbamato]-CuII
T2 - A volatile precursor for the efficient growth of cuprous sulfide films by MOCVD
AU - McCain, Matthew N.
AU - Metz, Andrew W.
AU - Yang, Yu
AU - Stern, Charlotte L.
AU - Marks, Tobin J
PY - 2005/7
Y1 - 2005/7
N2 - The synthesis and characterization of bis-[2,2,2-trifluoroethyl) dithiocarbamato]copper(II) and its implementation as an effective precursor for cuprous sulfide film growth was studied. The compound was synthesized via the one-pot reaction of NaN(CH2CF3)2, CS 2 and CuCl2 2H2O in ether under N2. The volatility characteristics of the compound were analyzed and compared to those of Cu[S2CN(CH2Ch3)2] 2 using reduced-pressure thermogravimetric analysis. The compound was shown to exhibit greatly improved volatility and cab be used for the growth of high-quality cuprous sulfide films on amorphous glass substrates.
AB - The synthesis and characterization of bis-[2,2,2-trifluoroethyl) dithiocarbamato]copper(II) and its implementation as an effective precursor for cuprous sulfide film growth was studied. The compound was synthesized via the one-pot reaction of NaN(CH2CF3)2, CS 2 and CuCl2 2H2O in ether under N2. The volatility characteristics of the compound were analyzed and compared to those of Cu[S2CN(CH2Ch3)2] 2 using reduced-pressure thermogravimetric analysis. The compound was shown to exhibit greatly improved volatility and cab be used for the growth of high-quality cuprous sulfide films on amorphous glass substrates.
UR - http://www.scopus.com/inward/record.url?scp=22944443578&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=22944443578&partnerID=8YFLogxK
U2 - 10.1002/cvde.200404200
DO - 10.1002/cvde.200404200
M3 - Article
AN - SCOPUS:22944443578
VL - 11
SP - 291
EP - 294
JO - Chemical Vapor Deposition
JF - Chemical Vapor Deposition
SN - 0948-1907
IS - 6-7
ER -