Abstract
The synthesis and characterization of bis-[2,2,2-trifluoroethyl) dithiocarbamato]copper(II) and its implementation as an effective precursor for cuprous sulfide film growth was studied. The compound was synthesized via the one-pot reaction of NaN(CH2CF3)2, CS 2 and CuCl2 2H2O in ether under N2. The volatility characteristics of the compound were analyzed and compared to those of Cu[S2CN(CH2Ch3)2] 2 using reduced-pressure thermogravimetric analysis. The compound was shown to exhibit greatly improved volatility and cab be used for the growth of high-quality cuprous sulfide films on amorphous glass substrates.
| Original language | English |
|---|---|
| Pages (from-to) | 291-294 |
| Number of pages | 4 |
| Journal | Chemical Vapor Deposition |
| Volume | 11 |
| Issue number | 6-7 |
| DOIs | |
| Publication status | Published - Jul 1 2005 |
ASJC Scopus subject areas
- Chemistry(all)
- Surfaces and Interfaces
- Process Chemistry and Technology
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Cite this
McCain, M. N., Metz, A. W., Yang, Y., Stern, C. L., & Marks, T. J. (2005). Bis[di(2,2,2-trifluoroethyl)dithiocarbamato]-CuII: A volatile precursor for the efficient growth of cuprous sulfide films by MOCVD. Chemical Vapor Deposition, 11(6-7), 291-294. https://doi.org/10.1002/cvde.200404200