Bis[di(2,2,2-trifluoroethyl)dithiocarbamato]-CuII: A volatile precursor for the efficient growth of cuprous sulfide films by MOCVD

Matthew N. McCain, Andrew W. Metz, Yu Yang, Charlotte L. Stern, Tobin J Marks

Research output: Contribution to journalArticle

4 Citations (Scopus)


The synthesis and characterization of bis-[2,2,2-trifluoroethyl) dithiocarbamato]copper(II) and its implementation as an effective precursor for cuprous sulfide film growth was studied. The compound was synthesized via the one-pot reaction of NaN(CH2CF3)2, CS 2 and CuCl2 2H2O in ether under N2. The volatility characteristics of the compound were analyzed and compared to those of Cu[S2CN(CH2Ch3)2] 2 using reduced-pressure thermogravimetric analysis. The compound was shown to exhibit greatly improved volatility and cab be used for the growth of high-quality cuprous sulfide films on amorphous glass substrates.

Original languageEnglish
Pages (from-to)291-294
Number of pages4
JournalChemical Vapor Deposition
Issue number6-7
Publication statusPublished - Jul 2005


ASJC Scopus subject areas

  • Electrochemistry
  • Process Chemistry and Technology
  • Surfaces, Coatings and Films
  • Surfaces and Interfaces
  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

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