Bis[di(2,2,2-trifluoroethyl)dithiocarbamato]-CuII: A volatile precursor for the efficient growth of cuprous sulfide films by MOCVD

Matthew N. McCain; Andrew W. Metz; Yu Yang; Charlotte L. Stern; Tobin J Marks

doi:10.1002/cvde.200404200

Bis[di(2,2,2-trifluoroethyl)dithiocarbamato]-Cu^II: A volatile precursor for the efficient growth of cuprous sulfide films by MOCVD

Matthew N. McCain, Andrew W. Metz, Yu Yang, Charlotte L. Stern, Tobin J Marks

Northwestern University

Research output: Contribution to journal › Article

4 Citations (Scopus)

Abstract

The synthesis and characterization of bis-[2,2,2-trifluoroethyl) dithiocarbamato]copper(II) and its implementation as an effective precursor for cuprous sulfide film growth was studied. The compound was synthesized via the one-pot reaction of NaN(CH₂CF₃)₂, CS ₂ and CuCl₂ 2H₂O in ether under N₂. The volatility characteristics of the compound were analyzed and compared to those of Cu[S₂CN(CH₂Ch₃)₂] ₂ using reduced-pressure thermogravimetric analysis. The compound was shown to exhibit greatly improved volatility and cab be used for the growth of high-quality cuprous sulfide films on amorphous glass substrates.

Original language	English
Pages (from-to)	291-294
Number of pages	4
Journal	Chemical Vapor Deposition
Volume	11
Issue number	6-7
DOIs	https://doi.org/10.1002/cvde.200404200
Publication status	Published - Jul 2005

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ASJC Scopus subject areas

Electrochemistry
Process Chemistry and Technology
Surfaces, Coatings and Films
Surfaces and Interfaces
Condensed Matter Physics
Electronic, Optical and Magnetic Materials

Cite this

McCain, M. N., Metz, A. W., Yang, Y., Stern, C. L., & Marks, T. J. (2005). Bis[di(2,2,2-trifluoroethyl)dithiocarbamato]-Cu^II: A volatile precursor for the efficient growth of cuprous sulfide films by MOCVD. Chemical Vapor Deposition, 11(6-7), 291-294. https://doi.org/10.1002/cvde.200404200

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abstract = "The synthesis and characterization of bis-[2,2,2-trifluoroethyl) dithiocarbamato]copper(II) and its implementation as an effective precursor for cuprous sulfide film growth was studied. The compound was synthesized via the one-pot reaction of NaN(CH2CF3)2, CS 2 and CuCl2 2H2O in ether under N2. The volatility characteristics of the compound were analyzed and compared to those of Cu[S2CN(CH2Ch3)2] 2 using reduced-pressure thermogravimetric analysis. The compound was shown to exhibit greatly improved volatility and cab be used for the growth of high-quality cuprous sulfide films on amorphous glass substrates.",

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10.1002/cvde.200404200