Abstract
Unlike the Si-SiO2 interface, the SiC-SiO2 interface has large defect densities. Though nitridation has been shown to reduce the defect density, the effect of H remains an open issue. Here we combine experimental data and the results of first-principles calculations to demonstrate that a Si-C-O bonded interlayer with correlated threefold-coordinated C atoms accounts for the observed defect states, for passivation by N and atomic H, and for the nature of residual defects.
| Original language | English |
|---|---|
| Article number | 026101 |
| Journal | Physical Review Letters |
| Volume | 98 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2007 |
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ASJC Scopus subject areas
- Physics and Astronomy(all)
Cite this
Bonding at the SiC-SiO2 interface and the effects of nitrogen and hydrogen. / Wang, Sanwu; Dhar, S.; Wang, Shu Rui; Ahyi, A. C.; Franceschetti, A.; Williams, J. R.; Feldman, Leonard C; Pantelides, Sokrates T.
In: Physical Review Letters, Vol. 98, No. 2, 026101, 2007.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Bonding at the SiC-SiO2 interface and the effects of nitrogen and hydrogen
AU - Wang, Sanwu
AU - Dhar, S.
AU - Wang, Shu Rui
AU - Ahyi, A. C.
AU - Franceschetti, A.
AU - Williams, J. R.
AU - Feldman, Leonard C
AU - Pantelides, Sokrates T.
PY - 2007
Y1 - 2007
N2 - Unlike the Si-SiO2 interface, the SiC-SiO2 interface has large defect densities. Though nitridation has been shown to reduce the defect density, the effect of H remains an open issue. Here we combine experimental data and the results of first-principles calculations to demonstrate that a Si-C-O bonded interlayer with correlated threefold-coordinated C atoms accounts for the observed defect states, for passivation by N and atomic H, and for the nature of residual defects.
AB - Unlike the Si-SiO2 interface, the SiC-SiO2 interface has large defect densities. Though nitridation has been shown to reduce the defect density, the effect of H remains an open issue. Here we combine experimental data and the results of first-principles calculations to demonstrate that a Si-C-O bonded interlayer with correlated threefold-coordinated C atoms accounts for the observed defect states, for passivation by N and atomic H, and for the nature of residual defects.
UR - http://www.scopus.com/inward/record.url?scp=33846345840&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33846345840&partnerID=8YFLogxK
U2 - 10.1103/PhysRevLett.98.026101
DO - 10.1103/PhysRevLett.98.026101
M3 - Article
VL - 98
JO - Physical Review Letters
JF - Physical Review Letters
SN - 0031-9007
IS - 2
M1 - 026101
ER -