Bonding at the SiC-SiO2 interface and the effects of nitrogen and hydrogen

Sanwu Wang; S. Dhar; Shu Rui Wang; A. C. Ahyi; A. Franceschetti; J. R. Williams; L. C. Feldman; Sokrates T. Pantelides

doi:10.1103/PhysRevLett.98.026101

Bonding at the SiC-SiO2 interface and the effects of nitrogen and hydrogen

Sanwu Wang, S. Dhar, Shu Rui Wang, A. C. Ahyi, A. Franceschetti, J. R. Williams, L. C. Feldman, Sokrates T. Pantelides

Rutgers University

Research output: Contribution to journal › Article › peer-review

168 Citations (Scopus)

Abstract

Unlike the Si-SiO2 interface, the SiC-SiO2 interface has large defect densities. Though nitridation has been shown to reduce the defect density, the effect of H remains an open issue. Here we combine experimental data and the results of first-principles calculations to demonstrate that a Si-C-O bonded interlayer with correlated threefold-coordinated C atoms accounts for the observed defect states, for passivation by N and atomic H, and for the nature of residual defects.

Original language	English
Article number	026101
Journal	Physical review letters
Volume	98
Issue number	2
DOIs	https://doi.org/10.1103/PhysRevLett.98.026101
Publication status	Published - Jan 26 2007

ASJC Scopus subject areas

Physics and Astronomy(all)

Access to Document

10.1103/PhysRevLett.98.026101

Fingerprint Dive into the research topics of 'Bonding at the SiC-SiO2 interface and the effects of nitrogen and hydrogen'. Together they form a unique fingerprint.

Cite this

@article{2ae43ac127354206942facc414b5d47e,

title = "Bonding at the SiC-SiO2 interface and the effects of nitrogen and hydrogen",

abstract = "Unlike the Si-SiO2 interface, the SiC-SiO2 interface has large defect densities. Though nitridation has been shown to reduce the defect density, the effect of H remains an open issue. Here we combine experimental data and the results of first-principles calculations to demonstrate that a Si-C-O bonded interlayer with correlated threefold-coordinated C atoms accounts for the observed defect states, for passivation by N and atomic H, and for the nature of residual defects.",

author = "Sanwu Wang and S. Dhar and Wang, {Shu Rui} and Ahyi, {A. C.} and A. Franceschetti and Williams, {J. R.} and Feldman, {L. C.} and Pantelides, {Sokrates T.}",

year = "2007",

month = jan,

day = "26",

doi = "10.1103/PhysRevLett.98.026101",

language = "English",

volume = "98",

journal = "Physical Review Letters",

issn = "0031-9007",

publisher = "American Physical Society",

number = "2",

}

TY - JOUR

T1 - Bonding at the SiC-SiO2 interface and the effects of nitrogen and hydrogen

AU - Wang, Sanwu

AU - Dhar, S.

AU - Wang, Shu Rui

AU - Ahyi, A. C.

AU - Franceschetti, A.

AU - Williams, J. R.

AU - Feldman, L. C.

AU - Pantelides, Sokrates T.

PY - 2007/1/26

Y1 - 2007/1/26

N2 - Unlike the Si-SiO2 interface, the SiC-SiO2 interface has large defect densities. Though nitridation has been shown to reduce the defect density, the effect of H remains an open issue. Here we combine experimental data and the results of first-principles calculations to demonstrate that a Si-C-O bonded interlayer with correlated threefold-coordinated C atoms accounts for the observed defect states, for passivation by N and atomic H, and for the nature of residual defects.

AB - Unlike the Si-SiO2 interface, the SiC-SiO2 interface has large defect densities. Though nitridation has been shown to reduce the defect density, the effect of H remains an open issue. Here we combine experimental data and the results of first-principles calculations to demonstrate that a Si-C-O bonded interlayer with correlated threefold-coordinated C atoms accounts for the observed defect states, for passivation by N and atomic H, and for the nature of residual defects.

UR - http://www.scopus.com/inward/record.url?scp=33846345840&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33846345840&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.98.026101

DO - 10.1103/PhysRevLett.98.026101

M3 - Article

AN - SCOPUS:33846345840

VL - 98

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 2

M1 - 026101

ER -