Bonding at the SiC-SiO2 interface and the effects of nitrogen and hydrogen

Sanwu Wang, S. Dhar, Shu Rui Wang, A. C. Ahyi, A. Franceschetti, J. R. Williams, Leonard C Feldman, Sokrates T. Pantelides

Research output: Contribution to journalArticle

152 Citations (Scopus)

Abstract

Unlike the Si-SiO2 interface, the SiC-SiO2 interface has large defect densities. Though nitridation has been shown to reduce the defect density, the effect of H remains an open issue. Here we combine experimental data and the results of first-principles calculations to demonstrate that a Si-C-O bonded interlayer with correlated threefold-coordinated C atoms accounts for the observed defect states, for passivation by N and atomic H, and for the nature of residual defects.

Original languageEnglish
Article number026101
JournalPhysical Review Letters
Volume98
Issue number2
DOIs
Publication statusPublished - 2007

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nitrogen
defects
hydrogen
passivity
interlayers
atoms

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Wang, S., Dhar, S., Wang, S. R., Ahyi, A. C., Franceschetti, A., Williams, J. R., ... Pantelides, S. T. (2007). Bonding at the SiC-SiO2 interface and the effects of nitrogen and hydrogen. Physical Review Letters, 98(2), [026101]. https://doi.org/10.1103/PhysRevLett.98.026101

Bonding at the SiC-SiO2 interface and the effects of nitrogen and hydrogen. / Wang, Sanwu; Dhar, S.; Wang, Shu Rui; Ahyi, A. C.; Franceschetti, A.; Williams, J. R.; Feldman, Leonard C; Pantelides, Sokrates T.

In: Physical Review Letters, Vol. 98, No. 2, 026101, 2007.

Research output: Contribution to journalArticle

Wang, S, Dhar, S, Wang, SR, Ahyi, AC, Franceschetti, A, Williams, JR, Feldman, LC & Pantelides, ST 2007, 'Bonding at the SiC-SiO2 interface and the effects of nitrogen and hydrogen', Physical Review Letters, vol. 98, no. 2, 026101. https://doi.org/10.1103/PhysRevLett.98.026101
Wang, Sanwu ; Dhar, S. ; Wang, Shu Rui ; Ahyi, A. C. ; Franceschetti, A. ; Williams, J. R. ; Feldman, Leonard C ; Pantelides, Sokrates T. / Bonding at the SiC-SiO2 interface and the effects of nitrogen and hydrogen. In: Physical Review Letters. 2007 ; Vol. 98, No. 2.
@article{2ae43ac127354206942facc414b5d47e,
title = "Bonding at the SiC-SiO2 interface and the effects of nitrogen and hydrogen",
abstract = "Unlike the Si-SiO2 interface, the SiC-SiO2 interface has large defect densities. Though nitridation has been shown to reduce the defect density, the effect of H remains an open issue. Here we combine experimental data and the results of first-principles calculations to demonstrate that a Si-C-O bonded interlayer with correlated threefold-coordinated C atoms accounts for the observed defect states, for passivation by N and atomic H, and for the nature of residual defects.",
author = "Sanwu Wang and S. Dhar and Wang, {Shu Rui} and Ahyi, {A. C.} and A. Franceschetti and Williams, {J. R.} and Feldman, {Leonard C} and Pantelides, {Sokrates T.}",
year = "2007",
doi = "10.1103/PhysRevLett.98.026101",
language = "English",
volume = "98",
journal = "Physical Review Letters",
issn = "0031-9007",
publisher = "American Physical Society",
number = "2",

}

TY - JOUR

T1 - Bonding at the SiC-SiO2 interface and the effects of nitrogen and hydrogen

AU - Wang, Sanwu

AU - Dhar, S.

AU - Wang, Shu Rui

AU - Ahyi, A. C.

AU - Franceschetti, A.

AU - Williams, J. R.

AU - Feldman, Leonard C

AU - Pantelides, Sokrates T.

PY - 2007

Y1 - 2007

N2 - Unlike the Si-SiO2 interface, the SiC-SiO2 interface has large defect densities. Though nitridation has been shown to reduce the defect density, the effect of H remains an open issue. Here we combine experimental data and the results of first-principles calculations to demonstrate that a Si-C-O bonded interlayer with correlated threefold-coordinated C atoms accounts for the observed defect states, for passivation by N and atomic H, and for the nature of residual defects.

AB - Unlike the Si-SiO2 interface, the SiC-SiO2 interface has large defect densities. Though nitridation has been shown to reduce the defect density, the effect of H remains an open issue. Here we combine experimental data and the results of first-principles calculations to demonstrate that a Si-C-O bonded interlayer with correlated threefold-coordinated C atoms accounts for the observed defect states, for passivation by N and atomic H, and for the nature of residual defects.

UR - http://www.scopus.com/inward/record.url?scp=33846345840&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33846345840&partnerID=8YFLogxK

U2 - 10.1103/PhysRevLett.98.026101

DO - 10.1103/PhysRevLett.98.026101

M3 - Article

VL - 98

JO - Physical Review Letters

JF - Physical Review Letters

SN - 0031-9007

IS - 2

M1 - 026101

ER -