Bonding at the SiC-SiO2 interface and the effects of nitrogen and hydrogen

Sanwu Wang, S. Dhar, Shu Rui Wang, A. C. Ahyi, A. Franceschetti, J. R. Williams, L. C. Feldman, Sokrates T. Pantelides

Research output: Contribution to journalArticle

158 Citations (Scopus)

Abstract

Unlike the Si-SiO2 interface, the SiC-SiO2 interface has large defect densities. Though nitridation has been shown to reduce the defect density, the effect of H remains an open issue. Here we combine experimental data and the results of first-principles calculations to demonstrate that a Si-C-O bonded interlayer with correlated threefold-coordinated C atoms accounts for the observed defect states, for passivation by N and atomic H, and for the nature of residual defects.

Original languageEnglish
Article number026101
JournalPhysical review letters
Volume98
Issue number2
DOIs
Publication statusPublished - Jan 26 2007

    Fingerprint

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Wang, S., Dhar, S., Wang, S. R., Ahyi, A. C., Franceschetti, A., Williams, J. R., Feldman, L. C., & Pantelides, S. T. (2007). Bonding at the SiC-SiO2 interface and the effects of nitrogen and hydrogen. Physical review letters, 98(2), [026101]. https://doi.org/10.1103/PhysRevLett.98.026101