Bonding at the SiC-SiO2 interface and the effects of nitrogen and hydrogen

Sanwu Wang, S. Dhar, Shu Rui Wang, A. C. Ahyi, A. Franceschetti, J. R. Williams, L. C. Feldman, Sokrates T. Pantelides

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Abstract

Unlike the Si-SiO2 interface, the SiC-SiO2 interface has large defect densities. Though nitridation has been shown to reduce the defect density, the effect of H remains an open issue. Here we combine experimental data and the results of first-principles calculations to demonstrate that a Si-C-O bonded interlayer with correlated threefold-coordinated C atoms accounts for the observed defect states, for passivation by N and atomic H, and for the nature of residual defects.

Original languageEnglish
Article number026101
JournalPhysical review letters
Volume98
Issue number2
DOIs
Publication statusPublished - Jan 26 2007

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Wang, S., Dhar, S., Wang, S. R., Ahyi, A. C., Franceschetti, A., Williams, J. R., Feldman, L. C., & Pantelides, S. T. (2007). Bonding at the SiC-SiO2 interface and the effects of nitrogen and hydrogen. Physical review letters, 98(2), [026101]. https://doi.org/10.1103/PhysRevLett.98.026101