This paper presents a review of new results obtained by a combination of first-principles theory, Z-contrast imaging, and electron-energy-loss spectroscopy in the context of a broader experimental/theoretical program to understand and control the atomic-scale structure of SiC-SiO 2 interfaces. The ultimate purpose is to achieve low interface trap densities for device applications. Results are given for global bonding arrangements in comparison with those of the Si-SiO 2 interface, the mechanism of the oxidation process, the nature of possible interface defects and their passivation by N and H, and the formation and dissolution of C clusters in SiO 2 during oxidation and reoxidation.
|Journal||Materials Research Society Symposium-Proceedings|
|Publication status||Published - Jan 1 2001|
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering