Bonding, defects, and defect dynamics in the SiC-SiO                         2                          system

S. T. Pantelides; R. Buczko; M. Di Ventra; S. Wang; S. G. Kim; S. J. Pennycook; G. Duscher; L. C. Feldman; K. McDonald; R. K. Chanana; R. A. Weller; J. R. Williams; G. Y. Chung; C. C. Tin; T. Isaacs-Smith

Bonding, defects, and defect dynamics in the SiC-SiO ₂ system

S. T. Pantelides, R. Buczko, M. Di Ventra, S. Wang, S. G. Kim, S. J. Pennycook, G. Duscher, L. C. Feldman, K. McDonald, R. K. Chanana, R. A. Weller, J. R. Williams, G. Y. Chung, C. C. Tin, T. Isaacs-Smith

Rutgers University

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

This paper presents a review of new results obtained by a combination of first-principles theory, Z-contrast imaging, and electron-energy-loss spectroscopy in the context of a broader experimental/theoretical program to understand and control the atomic-scale structure of SiC-SiO ₂ interfaces. The ultimate purpose is to achieve low interface trap densities for device applications. Results are given for global bonding arrangements in comparison with those of the Si-SiO ₂ interface, the mechanism of the oxidation process, the nature of possible interface defects and their passivation by N and H, and the formation and dissolution of C clusters in SiO ₂ during oxidation and reoxidation.

Original language	English
Pages (from-to)	H.3.3.1-H.3.3.9
Journal	Materials Research Society Symposium-Proceedings
Volume	640
Publication status	Published - 2001

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Pantelides, S. T., Buczko, R., Di Ventra, M., Wang, S., Kim, S. G., Pennycook, S. J., Duscher, G., Feldman, L. C., McDonald, K., Chanana, R. K., Weller, R. A., Williams, J. R., Chung, G. Y., Tin, C. C., & Isaacs-Smith, T. (2001). Bonding, defects, and defect dynamics in the SiC-SiO ₂ system Materials Research Society Symposium-Proceedings, 640, H.3.3.1-H.3.3.9.

Bonding, defects, and defect dynamics in the SiC-SiO ₂ system . / Pantelides, S. T.; Buczko, R.; Di Ventra, M.; Wang, S.; Kim, S. G.; Pennycook, S. J.; Duscher, G.; Feldman, L. C.; McDonald, K.; Chanana, R. K.; Weller, R. A.; Williams, J. R.; Chung, G. Y.; Tin, C. C.; Isaacs-Smith, T.

In: Materials Research Society Symposium-Proceedings, Vol. 640, 2001, p. H.3.3.1-H.3.3.9.

Research output: Contribution to journal › Article

Pantelides, ST, Buczko, R, Di Ventra, M, Wang, S, Kim, SG, Pennycook, SJ, Duscher, G, Feldman, LC, McDonald, K, Chanana, RK, Weller, RA, Williams, JR, Chung, GY, Tin, CC & Isaacs-Smith, T 2001, ' Bonding, defects, and defect dynamics in the SiC-SiO ₂ system ', Materials Research Society Symposium-Proceedings, vol. 640, pp. H.3.3.1-H.3.3.9.

Pantelides, S. T. ; Buczko, R. ; Di Ventra, M. ; Wang, S. ; Kim, S. G. ; Pennycook, S. J. ; Duscher, G. ; Feldman, L. C. ; McDonald, K. ; Chanana, R. K. ; Weller, R. A. ; Williams, J. R. ; Chung, G. Y. ; Tin, C. C. ; Isaacs-Smith, T. / Bonding, defects, and defect dynamics in the SiC-SiO ₂ system In: Materials Research Society Symposium-Proceedings. 2001 ; Vol. 640. pp. H.3.3.1-H.3.3.9.

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abstract = " This paper presents a review of new results obtained by a combination of first-principles theory, Z-contrast imaging, and electron-energy-loss spectroscopy in the context of a broader experimental/theoretical program to understand and control the atomic-scale structure of SiC-SiO 2 interfaces. The ultimate purpose is to achieve low interface trap densities for device applications. Results are given for global bonding arrangements in comparison with those of the Si-SiO 2 interface, the mechanism of the oxidation process, the nature of possible interface defects and their passivation by N and H, and the formation and dissolution of C clusters in SiO 2 during oxidation and reoxidation.",

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AU - Isaacs-Smith, T.

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