Bonding, defects, and defect dynamics in the SiC-SiO                         2                          system

S. T. Pantelides; R. Buczko; M. Di Ventra; S. Wang; S. G. Kim; S. J. Pennycook; G. Duscher; L. C. Feldman; K. McDonald; R. K. Chanana; R. A. Weller; J. R. Williams; G. Y. Chung; C. C. Tin; T. Isaacs-Smith

Bonding, defects, and defect dynamics in the SiC-SiO ₂ system

S. T. Pantelides, R. Buczko, M. Di Ventra, S. Wang, S. G. Kim, S. J. Pennycook, G. Duscher, L. C. Feldman, K. McDonald, R. K. Chanana, R. A. Weller, J. R. Williams, G. Y. Chung, C. C. Tin, T. Isaacs-Smith

Rutgers University

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

This paper presents a review of new results obtained by a combination of first-principles theory, Z-contrast imaging, and electron-energy-loss spectroscopy in the context of a broader experimental/theoretical program to understand and control the atomic-scale structure of SiC-SiO ₂ interfaces. The ultimate purpose is to achieve low interface trap densities for device applications. Results are given for global bonding arrangements in comparison with those of the Si-SiO ₂ interface, the mechanism of the oxidation process, the nature of possible interface defects and their passivation by N and H, and the formation and dissolution of C clusters in SiO ₂ during oxidation and reoxidation.

Original language	English
Pages (from-to)	H.3.3.1-H.3.3.9
Journal	Materials Research Society Symposium-Proceedings
Volume	640
Publication status	Published - Jan 1 2001

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

Access to Document

Fingerprint Dive into the research topics of 'Bonding, defects, and defect dynamics in the SiC-SiO <sub>2</sub> system'. Together they form a unique fingerprint.

Cite this

Pantelides, S. T., Buczko, R., Di Ventra, M., Wang, S., Kim, S. G., Pennycook, S. J., Duscher, G., Feldman, L. C., McDonald, K., Chanana, R. K., Weller, R. A., Williams, J. R., Chung, G. Y., Tin, C. C., & Isaacs-Smith, T. (2001). Bonding, defects, and defect dynamics in the SiC-SiO ₂ system Materials Research Society Symposium-Proceedings, 640, H.3.3.1-H.3.3.9.

Bonding, defects, and defect dynamics in the SiC-SiO ₂ system . / Pantelides, S. T.; Buczko, R.; Di Ventra, M.; Wang, S.; Kim, S. G.; Pennycook, S. J.; Duscher, G.; Feldman, L. C.; McDonald, K.; Chanana, R. K.; Weller, R. A.; Williams, J. R.; Chung, G. Y.; Tin, C. C.; Isaacs-Smith, T.

In: Materials Research Society Symposium-Proceedings, Vol. 640, 01.01.2001, p. H.3.3.1-H.3.3.9.

Research output: Contribution to journal › Article

Pantelides, ST, Buczko, R, Di Ventra, M, Wang, S, Kim, SG, Pennycook, SJ, Duscher, G, Feldman, LC, McDonald, K, Chanana, RK, Weller, RA, Williams, JR, Chung, GY, Tin, CC & Isaacs-Smith, T 2001, ' Bonding, defects, and defect dynamics in the SiC-SiO ₂ system ', Materials Research Society Symposium-Proceedings, vol. 640, pp. H.3.3.1-H.3.3.9.

Pantelides, S. T. ; Buczko, R. ; Di Ventra, M. ; Wang, S. ; Kim, S. G. ; Pennycook, S. J. ; Duscher, G. ; Feldman, L. C. ; McDonald, K. ; Chanana, R. K. ; Weller, R. A. ; Williams, J. R. ; Chung, G. Y. ; Tin, C. C. ; Isaacs-Smith, T. / Bonding, defects, and defect dynamics in the SiC-SiO ₂ system In: Materials Research Society Symposium-Proceedings. 2001 ; Vol. 640. pp. H.3.3.1-H.3.3.9.

@article{3f015c803bc74e1abc062f7cd3a54f58,

title = " Bonding, defects, and defect dynamics in the SiC-SiO 2 system ",

abstract = " This paper presents a review of new results obtained by a combination of first-principles theory, Z-contrast imaging, and electron-energy-loss spectroscopy in the context of a broader experimental/theoretical program to understand and control the atomic-scale structure of SiC-SiO 2 interfaces. The ultimate purpose is to achieve low interface trap densities for device applications. Results are given for global bonding arrangements in comparison with those of the Si-SiO 2 interface, the mechanism of the oxidation process, the nature of possible interface defects and their passivation by N and H, and the formation and dissolution of C clusters in SiO 2 during oxidation and reoxidation.",

author = "Pantelides, {S. T.} and R. Buczko and {Di Ventra}, M. and S. Wang and Kim, {S. G.} and Pennycook, {S. J.} and G. Duscher and Feldman, {L. C.} and K. McDonald and Chanana, {R. K.} and Weller, {R. A.} and Williams, {J. R.} and Chung, {G. Y.} and Tin, {C. C.} and T. Isaacs-Smith",

year = "2001",

month = jan,

day = "1",

language = "English",

volume = "640",

pages = "H.3.3.1--H.3.3.9",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

}

TY - JOUR

T1 - Bonding, defects, and defect dynamics in the SiC-SiO 2 system

AU - Pantelides, S. T.

AU - Buczko, R.

AU - Di Ventra, M.

AU - Wang, S.

AU - Kim, S. G.

AU - Pennycook, S. J.

AU - Duscher, G.

AU - Feldman, L. C.

AU - McDonald, K.

AU - Chanana, R. K.

AU - Weller, R. A.

AU - Williams, J. R.

AU - Chung, G. Y.

AU - Tin, C. C.

AU - Isaacs-Smith, T.

PY - 2001/1/1

Y1 - 2001/1/1

N2 - This paper presents a review of new results obtained by a combination of first-principles theory, Z-contrast imaging, and electron-energy-loss spectroscopy in the context of a broader experimental/theoretical program to understand and control the atomic-scale structure of SiC-SiO 2 interfaces. The ultimate purpose is to achieve low interface trap densities for device applications. Results are given for global bonding arrangements in comparison with those of the Si-SiO 2 interface, the mechanism of the oxidation process, the nature of possible interface defects and their passivation by N and H, and the formation and dissolution of C clusters in SiO 2 during oxidation and reoxidation.

AB - This paper presents a review of new results obtained by a combination of first-principles theory, Z-contrast imaging, and electron-energy-loss spectroscopy in the context of a broader experimental/theoretical program to understand and control the atomic-scale structure of SiC-SiO 2 interfaces. The ultimate purpose is to achieve low interface trap densities for device applications. Results are given for global bonding arrangements in comparison with those of the Si-SiO 2 interface, the mechanism of the oxidation process, the nature of possible interface defects and their passivation by N and H, and the formation and dissolution of C clusters in SiO 2 during oxidation and reoxidation.

UR - http://www.scopus.com/inward/record.url?scp=85009836776&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85009836776&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:85009836776

VL - 640

SP - H.3.3.1-H.3.3.9

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

ER -