Bonding, defects, and defect dynamics in the SiC-SiO 2 system

S. T. Pantelides, R. Buczko, M. Di Ventra, S. Wang, S. G. Kim, S. J. Pennycook, G. Duscher, Leonard C Feldman, K. McDonald, R. K. Chanana, R. A. Weller, J. R. Williams, G. Y. Chung, C. C. Tin, T. Isaacs-Smith

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

This paper presents a review of new results obtained by a combination of first-principles theory, Z-contrast imaging, and electron-energy-loss spectroscopy in the context of a broader experimental/theoretical program to understand and control the atomic-scale structure of SiC-SiO 2 interfaces. The ultimate purpose is to achieve low interface trap densities for device applications. Results are given for global bonding arrangements in comparison with those of the Si-SiO 2 interface, the mechanism of the oxidation process, the nature of possible interface defects and their passivation by N and H, and the formation and dissolution of C clusters in SiO 2 during oxidation and reoxidation.

Original languageEnglish
Pages (from-to)H.3.3.1-H.3.3.9
JournalMaterials Research Society Symposium-Proceedings
Volume640
Publication statusPublished - Jan 1 2001

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Oxidation
Defects
Electron energy loss spectroscopy
defects
Passivation
Dissolution
Imaging techniques
oxidation
passivity
dissolving
energy dissipation
traps
electron energy
spectroscopy

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Pantelides, S. T., Buczko, R., Di Ventra, M., Wang, S., Kim, S. G., Pennycook, S. J., ... Isaacs-Smith, T. (2001). Bonding, defects, and defect dynamics in the SiC-SiO 2 system Materials Research Society Symposium-Proceedings, 640, H.3.3.1-H.3.3.9.

Bonding, defects, and defect dynamics in the SiC-SiO 2 system . / Pantelides, S. T.; Buczko, R.; Di Ventra, M.; Wang, S.; Kim, S. G.; Pennycook, S. J.; Duscher, G.; Feldman, Leonard C; McDonald, K.; Chanana, R. K.; Weller, R. A.; Williams, J. R.; Chung, G. Y.; Tin, C. C.; Isaacs-Smith, T.

In: Materials Research Society Symposium-Proceedings, Vol. 640, 01.01.2001, p. H.3.3.1-H.3.3.9.

Research output: Contribution to journalArticle

Pantelides, ST, Buczko, R, Di Ventra, M, Wang, S, Kim, SG, Pennycook, SJ, Duscher, G, Feldman, LC, McDonald, K, Chanana, RK, Weller, RA, Williams, JR, Chung, GY, Tin, CC & Isaacs-Smith, T 2001, ' Bonding, defects, and defect dynamics in the SiC-SiO 2 system ', Materials Research Society Symposium-Proceedings, vol. 640, pp. H.3.3.1-H.3.3.9.
Pantelides ST, Buczko R, Di Ventra M, Wang S, Kim SG, Pennycook SJ et al. Bonding, defects, and defect dynamics in the SiC-SiO 2 system Materials Research Society Symposium-Proceedings. 2001 Jan 1;640:H.3.3.1-H.3.3.9.
Pantelides, S. T. ; Buczko, R. ; Di Ventra, M. ; Wang, S. ; Kim, S. G. ; Pennycook, S. J. ; Duscher, G. ; Feldman, Leonard C ; McDonald, K. ; Chanana, R. K. ; Weller, R. A. ; Williams, J. R. ; Chung, G. Y. ; Tin, C. C. ; Isaacs-Smith, T. / Bonding, defects, and defect dynamics in the SiC-SiO 2 system In: Materials Research Society Symposium-Proceedings. 2001 ; Vol. 640. pp. H.3.3.1-H.3.3.9.
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