Bonding, defects, and defect dynamics in the SiC-SiO 2 system

S. T. Pantelides, R. Buczko, M. Di Ventra, S. Wang, S. G. Kim, S. J. Pennycook, G. Duscher, Leonard C Feldman, K. McDonald, R. K. Chanana, R. A. Weller, J. R. Williams, G. Y. Chung, C. C. Tin, T. Isaacs-Smith

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2 Citations (Scopus)


This paper presents a review of new results obtained by a combination of first-principles theory, Z-contrast imaging, and electron-energy-loss spectroscopy in the context of a broader experimental/theoretical program to understand and control the atomic-scale structure of SiC-SiO 2 interfaces. The ultimate purpose is to achieve low interface trap densities for device applications. Results are given for global bonding arrangements in comparison with those of the Si-SiO 2 interface, the mechanism of the oxidation process, the nature of possible interface defects and their passivation by N and H, and the formation and dissolution of C clusters in SiO 2 during oxidation and reoxidation.

Original languageEnglish
Pages (from-to)H.3.3.1-H.3.3.9
JournalMaterials Research Society Symposium-Proceedings
Publication statusPublished - Jan 1 2001


ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Pantelides, S. T., Buczko, R., Di Ventra, M., Wang, S., Kim, S. G., Pennycook, S. J., ... Isaacs-Smith, T. (2001). Bonding, defects, and defect dynamics in the SiC-SiO 2 system Materials Research Society Symposium-Proceedings, 640, H.3.3.1-H.3.3.9.