Abstract
This paper presents a review of new results obtained by a combination of first-principles theory, Z-contrast imaging, and electron-energy-loss spectroscopy in the context of a broader experimental/theoretical program to understand and control the atomic-scale structure of SiC-SiO 2 interfaces. The ultimate purpose is to achieve low interface trap densities for device applications. Results are given for global bonding arrangements in comparison with those of the Si-SiO 2 interface, the mechanism of the oxidation process, the nature of possible interface defects and their passivation by N and H, and the formation and dissolution of C clusters in SiO 2 during oxidation and reoxidation.
| Original language | English |
|---|---|
| Pages (from-to) | H.3.3.1-H.3.3.9 |
| Journal | Materials Research Society Symposium-Proceedings |
| Volume | 640 |
| Publication status | Published - Jan 1 2001 |
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ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
Bonding, defects, and defect dynamics in the SiC-SiO 2 system . / Pantelides, S. T.; Buczko, R.; Di Ventra, M.; Wang, S.; Kim, S. G.; Pennycook, S. J.; Duscher, G.; Feldman, Leonard C; McDonald, K.; Chanana, R. K.; Weller, R. A.; Williams, J. R.; Chung, G. Y.; Tin, C. C.; Isaacs-Smith, T.
In: Materials Research Society Symposium-Proceedings, Vol. 640, 01.01.2001, p. H.3.3.1-H.3.3.9.Research output: Contribution to journal › Article
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TY - JOUR
T1 - Bonding, defects, and defect dynamics in the SiC-SiO 2 system
AU - Pantelides, S. T.
AU - Buczko, R.
AU - Di Ventra, M.
AU - Wang, S.
AU - Kim, S. G.
AU - Pennycook, S. J.
AU - Duscher, G.
AU - Feldman, Leonard C
AU - McDonald, K.
AU - Chanana, R. K.
AU - Weller, R. A.
AU - Williams, J. R.
AU - Chung, G. Y.
AU - Tin, C. C.
AU - Isaacs-Smith, T.
PY - 2001/1/1
Y1 - 2001/1/1
N2 - This paper presents a review of new results obtained by a combination of first-principles theory, Z-contrast imaging, and electron-energy-loss spectroscopy in the context of a broader experimental/theoretical program to understand and control the atomic-scale structure of SiC-SiO 2 interfaces. The ultimate purpose is to achieve low interface trap densities for device applications. Results are given for global bonding arrangements in comparison with those of the Si-SiO 2 interface, the mechanism of the oxidation process, the nature of possible interface defects and their passivation by N and H, and the formation and dissolution of C clusters in SiO 2 during oxidation and reoxidation.
AB - This paper presents a review of new results obtained by a combination of first-principles theory, Z-contrast imaging, and electron-energy-loss spectroscopy in the context of a broader experimental/theoretical program to understand and control the atomic-scale structure of SiC-SiO 2 interfaces. The ultimate purpose is to achieve low interface trap densities for device applications. Results are given for global bonding arrangements in comparison with those of the Si-SiO 2 interface, the mechanism of the oxidation process, the nature of possible interface defects and their passivation by N and H, and the formation and dissolution of C clusters in SiO 2 during oxidation and reoxidation.
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UR - http://www.scopus.com/inward/citedby.url?scp=85009836776&partnerID=8YFLogxK
M3 - Article
VL - 640
SP - H.3.3.1-H.3.3.9
JO - Materials Research Society Symposium - Proceedings
JF - Materials Research Society Symposium - Proceedings
SN - 0272-9172
ER -