Bonding, defects, and defect dynamics in the SiC-SiO                         
                        2
                                                  system

S. T. Pantelides; R. Buczko; M. Di Ventra; S. Wang; S. G. Kim; S. J. Pennycook; G. Duscher; Leonard C Feldman; K. McDonald; R. K. Chanana; R. A. Weller; J. R. Williams; G. Y. Chung; C. C. Tin; T. Isaacs-Smith

Bonding, defects, and defect dynamics in the SiC-SiO ₂ system

S. T. Pantelides, R. Buczko, M. Di Ventra, S. Wang, S. G. Kim, S. J. Pennycook, G. Duscher, Leonard C Feldman, K. McDonald, R. K. Chanana, R. A. Weller, J. R. Williams, G. Y. Chung, C. C. Tin, T. Isaacs-Smith

Rutgers University

Research output: Contribution to journal › Article

2 Citations (Scopus)

Abstract

This paper presents a review of new results obtained by a combination of first-principles theory, Z-contrast imaging, and electron-energy-loss spectroscopy in the context of a broader experimental/theoretical program to understand and control the atomic-scale structure of SiC-SiO ₂ interfaces. The ultimate purpose is to achieve low interface trap densities for device applications. Results are given for global bonding arrangements in comparison with those of the Si-SiO ₂ interface, the mechanism of the oxidation process, the nature of possible interface defects and their passivation by N and H, and the formation and dissolution of C clusters in SiO ₂ during oxidation and reoxidation.

Original language	English
Pages (from-to)	H.3.3.1-H.3.3.9
Journal	Materials Research Society Symposium-Proceedings
Volume	640
Publication status	Published - Jan 1 2001

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ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Pantelides, S. T., Buczko, R., Di Ventra, M., Wang, S., Kim, S. G., Pennycook, S. J., ... Isaacs-Smith, T. (2001). Bonding, defects, and defect dynamics in the SiC-SiO ₂ system Materials Research Society Symposium-Proceedings, 640, H.3.3.1-H.3.3.9.

Bonding, defects, and defect dynamics in the SiC-SiO ₂ system . / Pantelides, S. T.; Buczko, R.; Di Ventra, M.; Wang, S.; Kim, S. G.; Pennycook, S. J.; Duscher, G.; Feldman, Leonard C; McDonald, K.; Chanana, R. K.; Weller, R. A.; Williams, J. R.; Chung, G. Y.; Tin, C. C.; Isaacs-Smith, T.

In: Materials Research Society Symposium-Proceedings, Vol. 640, 01.01.2001, p. H.3.3.1-H.3.3.9.

Research output: Contribution to journal › Article

Pantelides, ST, Buczko, R, Di Ventra, M, Wang, S, Kim, SG, Pennycook, SJ, Duscher, G, Feldman, LC, McDonald, K, Chanana, RK, Weller, RA, Williams, JR, Chung, GY, Tin, CC & Isaacs-Smith, T 2001, ' Bonding, defects, and defect dynamics in the SiC-SiO ₂ system ', Materials Research Society Symposium-Proceedings, vol. 640, pp. H.3.3.1-H.3.3.9.

Pantelides ST, Buczko R, Di Ventra M, Wang S, Kim SG, Pennycook SJ et al. Bonding, defects, and defect dynamics in the SiC-SiO ₂ system Materials Research Society Symposium-Proceedings. 2001 Jan 1;640:H.3.3.1-H.3.3.9.

Pantelides, S. T. ; Buczko, R. ; Di Ventra, M. ; Wang, S. ; Kim, S. G. ; Pennycook, S. J. ; Duscher, G. ; Feldman, Leonard C ; McDonald, K. ; Chanana, R. K. ; Weller, R. A. ; Williams, J. R. ; Chung, G. Y. ; Tin, C. C. ; Isaacs-Smith, T. / Bonding, defects, and defect dynamics in the SiC-SiO ₂ system In: Materials Research Society Symposium-Proceedings. 2001 ; Vol. 640. pp. H.3.3.1-H.3.3.9.

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abstract = "This paper presents a review of new results obtained by a combination of first-principles theory, Z-contrast imaging, and electron-energy-loss spectroscopy in the context of a broader experimental/theoretical program to understand and control the atomic-scale structure of SiC-SiO 2 interfaces. The ultimate purpose is to achieve low interface trap densities for device applications. Results are given for global bonding arrangements in comparison with those of the Si-SiO 2 interface, the mechanism of the oxidation process, the nature of possible interface defects and their passivation by N and H, and the formation and dissolution of C clusters in SiO 2 during oxidation and reoxidation.",

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Bonding, defects, and defect dynamics in the SiC-SiO 2 system

Abstract

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Bonding, defects, and defect dynamics in the SiC-SiO ₂ system