Bonding, defects, and defect dynamics in the SiC-SiO2 system

S. T. Pantelides, R. Buczko, M. Di Ventra, S. Wang, S. G. Kim, S. J. Pennycook, G. Duscher, Leonard C Feldman, K. McDonald, R. K. Chanana, R. A. Weller, J. R. Williams, G. Y. Chung, C. C. Tin, T. Isaacs-Smith

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

This paper presents a review of new results obtained by a combination of first-principles theory, Z-contrast imaging, and electron-energy-loss spectroscopy in the context of a broader experimental/theoretical program to understand and control the atomic-scale structure of SiC-SiO2 interfaces. The ultimate purpose is to achieve low interface trap densities for device applications. Results are given for global bonding arrangements in comparison with those of the Si-SiO2 interface, the mechanism of the oxidation process, the nature of possible interface defects and their passivation by N and H, and the formation and dissolution of C clusters in SiO2 during oxidation and reoxidation.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsA. Argarwal, M. Skowronski, J.A. Cooper, E. Janzen
Volume640
Publication statusPublished - 2001
EventSilicon Carbide- Materials, Processing and Devices - Boston, MA, United States
Duration: Nov 27 2000Nov 29 2000

Other

OtherSilicon Carbide- Materials, Processing and Devices
CountryUnited States
CityBoston, MA
Period11/27/0011/29/00

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Pantelides, S. T., Buczko, R., Di Ventra, M., Wang, S., Kim, S. G., Pennycook, S. J., ... Isaacs-Smith, T. (2001). Bonding, defects, and defect dynamics in the SiC-SiO2 system. In A. Argarwal, M. Skowronski, J. A. Cooper, & E. Janzen (Eds.), Materials Research Society Symposium - Proceedings (Vol. 640)