Bonding, defects, and defect dynamics in the SiC-SiO2 system

S. T. Pantelides, R. Buczko, M. Di Ventra, S. Wang, S. G. Kim, S. J. Pennycook, G. Duscher, Leonard C Feldman, K. McDonald, R. K. Chanana, R. A. Weller, J. R. Williams, G. Y. Chung, C. C. Tin, T. Isaacs-Smith

Research output: Chapter in Book/Report/Conference proceedingConference contribution

7 Citations (Scopus)

Abstract

This paper presents a review of new results obtained by a combination of first-principles theory, Z-contrast imaging, and electron-energy-loss spectroscopy in the context of a broader experimental/theoretical program to understand and control the atomic-scale structure of SiC-SiO2 interfaces. The ultimate purpose is to achieve low interface trap densities for device applications. Results are given for global bonding arrangements in comparison with those of the Si-SiO2 interface, the mechanism of the oxidation process, the nature of possible interface defects and their passivation by N and H, and the formation and dissolution of C clusters in SiO2 during oxidation and reoxidation.

Original languageEnglish
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsA. Argarwal, M. Skowronski, J.A. Cooper, E. Janzen
Volume640
Publication statusPublished - 2001
EventSilicon Carbide- Materials, Processing and Devices - Boston, MA, United States
Duration: Nov 27 2000Nov 29 2000

Other

OtherSilicon Carbide- Materials, Processing and Devices
CountryUnited States
CityBoston, MA
Period11/27/0011/29/00

Fingerprint

Oxidation
Defects
Electron energy loss spectroscopy
Passivation
Dissolution
Imaging techniques

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Pantelides, S. T., Buczko, R., Di Ventra, M., Wang, S., Kim, S. G., Pennycook, S. J., ... Isaacs-Smith, T. (2001). Bonding, defects, and defect dynamics in the SiC-SiO2 system. In A. Argarwal, M. Skowronski, J. A. Cooper, & E. Janzen (Eds.), Materials Research Society Symposium - Proceedings (Vol. 640)

Bonding, defects, and defect dynamics in the SiC-SiO2 system. / Pantelides, S. T.; Buczko, R.; Di Ventra, M.; Wang, S.; Kim, S. G.; Pennycook, S. J.; Duscher, G.; Feldman, Leonard C; McDonald, K.; Chanana, R. K.; Weller, R. A.; Williams, J. R.; Chung, G. Y.; Tin, C. C.; Isaacs-Smith, T.

Materials Research Society Symposium - Proceedings. ed. / A. Argarwal; M. Skowronski; J.A. Cooper; E. Janzen. Vol. 640 2001.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Pantelides, ST, Buczko, R, Di Ventra, M, Wang, S, Kim, SG, Pennycook, SJ, Duscher, G, Feldman, LC, McDonald, K, Chanana, RK, Weller, RA, Williams, JR, Chung, GY, Tin, CC & Isaacs-Smith, T 2001, Bonding, defects, and defect dynamics in the SiC-SiO2 system. in A Argarwal, M Skowronski, JA Cooper & E Janzen (eds), Materials Research Society Symposium - Proceedings. vol. 640, Silicon Carbide- Materials, Processing and Devices, Boston, MA, United States, 11/27/00.
Pantelides ST, Buczko R, Di Ventra M, Wang S, Kim SG, Pennycook SJ et al. Bonding, defects, and defect dynamics in the SiC-SiO2 system. In Argarwal A, Skowronski M, Cooper JA, Janzen E, editors, Materials Research Society Symposium - Proceedings. Vol. 640. 2001
Pantelides, S. T. ; Buczko, R. ; Di Ventra, M. ; Wang, S. ; Kim, S. G. ; Pennycook, S. J. ; Duscher, G. ; Feldman, Leonard C ; McDonald, K. ; Chanana, R. K. ; Weller, R. A. ; Williams, J. R. ; Chung, G. Y. ; Tin, C. C. ; Isaacs-Smith, T. / Bonding, defects, and defect dynamics in the SiC-SiO2 system. Materials Research Society Symposium - Proceedings. editor / A. Argarwal ; M. Skowronski ; J.A. Cooper ; E. Janzen. Vol. 640 2001.
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