Abstract
This paper presents a review of new results obtained by a combination of first-principles theory, Z-contrast imaging, and electron-energy-loss spectroscopy in the context of a broader experimental/theoretical program to understand and control the atomic-scale structure of SiC-SiO2 interfaces. The ultimate purpose is to achieve low interface trap densities for device applications. Results are given for global bonding arrangements in comparison with those of the Si-SiO2 interface, the mechanism of the oxidation process, the nature of possible interface defects and their passivation by N and H, and the formation and dissolution of C clusters in SiO2 during oxidation and reoxidation.
Original language | English |
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Pages (from-to) | H.3.3.1-H.3.3.9 |
Journal | Materials Research Society Symposium - Proceedings |
Volume | 640 |
Publication status | Published - Jan 1 2001 |
Event | Silicon Carbide- Materials, Processing and Devices - Boston, MA, United States Duration: Nov 27 2000 → Nov 29 2000 |
ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering