Bonding, defects, and defect dynamics in the SiC-SiO2 system

S. T. Pantelides, R. Buczko, M. Di Ventra, S. Wang, S. G. Kim, S. J. Pennycook, G. Duscher, L. C. Feldman, K. McDonald, R. K. Chanana, R. A. Weller, J. R. Williams, G. Y. Chung, C. C. Tin, T. Isaacs-Smith

Research output: Contribution to journalConference articlepeer-review

7 Citations (Scopus)


This paper presents a review of new results obtained by a combination of first-principles theory, Z-contrast imaging, and electron-energy-loss spectroscopy in the context of a broader experimental/theoretical program to understand and control the atomic-scale structure of SiC-SiO2 interfaces. The ultimate purpose is to achieve low interface trap densities for device applications. Results are given for global bonding arrangements in comparison with those of the Si-SiO2 interface, the mechanism of the oxidation process, the nature of possible interface defects and their passivation by N and H, and the formation and dissolution of C clusters in SiO2 during oxidation and reoxidation.

Original languageEnglish
Pages (from-to)H.3.3.1-H.3.3.9
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 2001
EventSilicon Carbide- Materials, Processing and Devices - Boston, MA, United States
Duration: Nov 27 2000Nov 29 2000

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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