Bonding, defects, and defect dynamics in the SiC-SiO2 system

S. T. Pantelides; R. Buczko; M. Di Ventra; S. Wang; S. G. Kim; S. J. Pennycook; G. Duscher; L. C. Feldman; K. McDonald; R. K. Chanana; R. A. Weller; J. R. Williams; G. Y. Chung; C. C. Tin; T. Isaacs-Smith

Bonding, defects, and defect dynamics in the SiC-SiO₂ system

S. T. Pantelides, R. Buczko, M. Di Ventra, S. Wang, S. G. Kim, S. J. Pennycook, G. Duscher, L. C. Feldman, K. McDonald, R. K. Chanana, R. A. Weller, J. R. Williams, G. Y. Chung, C. C. Tin, T. Isaacs-Smith

Rutgers University

Research output: Contribution to journal › Conference article › peer-review

7 Citations (Scopus)

Abstract

This paper presents a review of new results obtained by a combination of first-principles theory, Z-contrast imaging, and electron-energy-loss spectroscopy in the context of a broader experimental/theoretical program to understand and control the atomic-scale structure of SiC-SiO₂ interfaces. The ultimate purpose is to achieve low interface trap densities for device applications. Results are given for global bonding arrangements in comparison with those of the Si-SiO₂ interface, the mechanism of the oxidation process, the nature of possible interface defects and their passivation by N and H, and the formation and dissolution of C clusters in SiO₂ during oxidation and reoxidation.

Original language	English
Pages (from-to)	H.3.3.1-H.3.3.9
Journal	Materials Research Society Symposium - Proceedings
Volume	640
Publication status	Published - 2001
Event	Silicon Carbide- Materials, Processing and Devices - Boston, MA, United States Duration: Nov 27 2000 → Nov 29 2000

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Bonding, defects, and defect dynamics in the SiC-SiO₂ system. / Pantelides, S. T.; Buczko, R.; Di Ventra, M.; Wang, S.; Kim, S. G.; Pennycook, S. J.; Duscher, G.; Feldman, L. C.; McDonald, K.; Chanana, R. K.; Weller, R. A.; Williams, J. R.; Chung, G. Y.; Tin, C. C.; Isaacs-Smith, T.

In: Materials Research Society Symposium - Proceedings, Vol. 640, 2001, p. H.3.3.1-H.3.3.9.

Research output: Contribution to journal › Conference article › peer-review

Pantelides, S. T. ; Buczko, R. ; Di Ventra, M. ; Wang, S. ; Kim, S. G. ; Pennycook, S. J. ; Duscher, G. ; Feldman, L. C. ; McDonald, K. ; Chanana, R. K. ; Weller, R. A. ; Williams, J. R. ; Chung, G. Y. ; Tin, C. C. ; Isaacs-Smith, T. / Bonding, defects, and defect dynamics in the SiC-SiO₂ system. In: Materials Research Society Symposium - Proceedings. 2001 ; Vol. 640. pp. H.3.3.1-H.3.3.9.

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title = "Bonding, defects, and defect dynamics in the SiC-SiO2 system",

abstract = "This paper presents a review of new results obtained by a combination of first-principles theory, Z-contrast imaging, and electron-energy-loss spectroscopy in the context of a broader experimental/theoretical program to understand and control the atomic-scale structure of SiC-SiO2 interfaces. The ultimate purpose is to achieve low interface trap densities for device applications. Results are given for global bonding arrangements in comparison with those of the Si-SiO2 interface, the mechanism of the oxidation process, the nature of possible interface defects and their passivation by N and H, and the formation and dissolution of C clusters in SiO2 during oxidation and reoxidation.",

author = "Pantelides, {S. T.} and R. Buczko and {Di Ventra}, M. and S. Wang and Kim, {S. G.} and Pennycook, {S. J.} and G. Duscher and Feldman, {L. C.} and K. McDonald and Chanana, {R. K.} and Weller, {R. A.} and Williams, {J. R.} and Chung, {G. Y.} and Tin, {C. C.} and T. Isaacs-Smith",

note = "Funding Information: This work was supported by DARPA grant MDA972-98-1-0007, EPRI grant WO806905, AFOSR (MURI) grant F-49620-99-1-0289, by UT-Battelle, LLC, for the U.S. DoE under Contract No. DE-AC05-00OR22725, and by the William A. and Nancy F. McMinn Endowment at Vanderbilt University.; Silicon Carbide- Materials, Processing and Devices ; Conference date: 27-11-2000 Through 29-11-2000",

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TY - JOUR

T1 - Bonding, defects, and defect dynamics in the SiC-SiO2 system

AU - Pantelides, S. T.

AU - Buczko, R.

AU - Di Ventra, M.

AU - Wang, S.

AU - Kim, S. G.

AU - Pennycook, S. J.

AU - Duscher, G.

AU - Feldman, L. C.

AU - McDonald, K.

AU - Chanana, R. K.

AU - Weller, R. A.

AU - Williams, J. R.

AU - Chung, G. Y.

AU - Tin, C. C.

AU - Isaacs-Smith, T.

N1 - Funding Information: This work was supported by DARPA grant MDA972-98-1-0007, EPRI grant WO806905, AFOSR (MURI) grant F-49620-99-1-0289, by UT-Battelle, LLC, for the U.S. DoE under Contract No. DE-AC05-00OR22725, and by the William A. and Nancy F. McMinn Endowment at Vanderbilt University.

PY - 2001

Y1 - 2001

N2 - This paper presents a review of new results obtained by a combination of first-principles theory, Z-contrast imaging, and electron-energy-loss spectroscopy in the context of a broader experimental/theoretical program to understand and control the atomic-scale structure of SiC-SiO2 interfaces. The ultimate purpose is to achieve low interface trap densities for device applications. Results are given for global bonding arrangements in comparison with those of the Si-SiO2 interface, the mechanism of the oxidation process, the nature of possible interface defects and their passivation by N and H, and the formation and dissolution of C clusters in SiO2 during oxidation and reoxidation.

AB - This paper presents a review of new results obtained by a combination of first-principles theory, Z-contrast imaging, and electron-energy-loss spectroscopy in the context of a broader experimental/theoretical program to understand and control the atomic-scale structure of SiC-SiO2 interfaces. The ultimate purpose is to achieve low interface trap densities for device applications. Results are given for global bonding arrangements in comparison with those of the Si-SiO2 interface, the mechanism of the oxidation process, the nature of possible interface defects and their passivation by N and H, and the formation and dissolution of C clusters in SiO2 during oxidation and reoxidation.

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UR - http://www.scopus.com/inward/citedby.url?scp=0034861963&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0034861963

VL - 640

SP - H.3.3.1-H.3.3.9

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

SN - 0272-9172

T2 - Silicon Carbide- Materials, Processing and Devices

Y2 - 27 November 2000 through 29 November 2000

ER -

Bonding, defects, and defect dynamics in the SiC-SiO2 system

Abstract

ASJC Scopus subject areas

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Bonding, defects, and defect dynamics in the SiC-SiO₂ system