Bonding, defects, and defect dynamics in the SiC-SiO2 system

S. T. Pantelides; R. Buczko; M. Di Ventra; S. Wang; S. G. Kim; S. J. Pennycook; G. Duscher; L. C. Feldman; K. McDonald; R. K. Chanana; R. A. Weller; J. R. Williams; G. Y. Chung; C. C. Tin; T. Isaacs-Smith

Bonding, defects, and defect dynamics in the SiC-SiO₂ system

S. T. Pantelides, R. Buczko, M. Di Ventra, S. Wang, S. G. Kim, S. J. Pennycook, G. Duscher, L. C. Feldman, K. McDonald, R. K. Chanana, R. A. Weller, J. R. Williams, G. Y. Chung, C. C. Tin, T. Isaacs-Smith

Rutgers University

Research output: Contribution to journal › Conference article

7 Citations (Scopus)

Abstract

This paper presents a review of new results obtained by a combination of first-principles theory, Z-contrast imaging, and electron-energy-loss spectroscopy in the context of a broader experimental/theoretical program to understand and control the atomic-scale structure of SiC-SiO₂ interfaces. The ultimate purpose is to achieve low interface trap densities for device applications. Results are given for global bonding arrangements in comparison with those of the Si-SiO₂ interface, the mechanism of the oxidation process, the nature of possible interface defects and their passivation by N and H, and the formation and dissolution of C clusters in SiO₂ during oxidation and reoxidation.

Original language	English
Pages (from-to)	H.3.3.1-H.3.3.9
Journal	Materials Research Society Symposium - Proceedings
Volume	640
Publication status	Published - Jan 1 2001
Event	Silicon Carbide- Materials, Processing and Devices - Boston, MA, United States Duration: Nov 27 2000 → Nov 29 2000

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Pantelides, S. T., Buczko, R., Di Ventra, M., Wang, S., Kim, S. G., Pennycook, S. J., Duscher, G., Feldman, L. C., McDonald, K., Chanana, R. K., Weller, R. A., Williams, J. R., Chung, G. Y., Tin, C. C., & Isaacs-Smith, T. (2001). Bonding, defects, and defect dynamics in the SiC-SiO₂ system. Materials Research Society Symposium - Proceedings, 640, H.3.3.1-H.3.3.9.

Bonding, defects, and defect dynamics in the SiC-SiO₂ system. / Pantelides, S. T.; Buczko, R.; Di Ventra, M.; Wang, S.; Kim, S. G.; Pennycook, S. J.; Duscher, G.; Feldman, L. C.; McDonald, K.; Chanana, R. K.; Weller, R. A.; Williams, J. R.; Chung, G. Y.; Tin, C. C.; Isaacs-Smith, T.

In: Materials Research Society Symposium - Proceedings, Vol. 640, 01.01.2001, p. H.3.3.1-H.3.3.9.

Research output: Contribution to journal › Conference article

Pantelides, S. T. ; Buczko, R. ; Di Ventra, M. ; Wang, S. ; Kim, S. G. ; Pennycook, S. J. ; Duscher, G. ; Feldman, L. C. ; McDonald, K. ; Chanana, R. K. ; Weller, R. A. ; Williams, J. R. ; Chung, G. Y. ; Tin, C. C. ; Isaacs-Smith, T. / Bonding, defects, and defect dynamics in the SiC-SiO₂ system. In: Materials Research Society Symposium - Proceedings. 2001 ; Vol. 640. pp. H.3.3.1-H.3.3.9.

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abstract = "This paper presents a review of new results obtained by a combination of first-principles theory, Z-contrast imaging, and electron-energy-loss spectroscopy in the context of a broader experimental/theoretical program to understand and control the atomic-scale structure of SiC-SiO2 interfaces. The ultimate purpose is to achieve low interface trap densities for device applications. Results are given for global bonding arrangements in comparison with those of the Si-SiO2 interface, the mechanism of the oxidation process, the nature of possible interface defects and their passivation by N and H, and the formation and dissolution of C clusters in SiO2 during oxidation and reoxidation.",

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