Boron-retarding and high interface quality thin fate dielectric for deep-submicron devices

L. Manchanda, G. R. Weber, W. Mansfield, D. M. Boulin, K. Krisch, Y. O. Kim, R. Storz, N. Moriya, H. S. Luftman, L. C. Feldman, M. L. Green, R. C. Kistler, J. T.C. Lee, F. Klemens

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report the fabrication and device characteristics of a 50Angstrom thick dual-layer gate dielectric with high interface quality (Dit and QfAPEQ1010/cm2) and capable of retarding boron penetration. This dual-layer dielectric is formed by low temperature CVD deposition of a APEQ40Angstrom thick oxynitride layer, through which slow O2 diffusion is used to grow a APEQ10Angstrom thick SiO2 at the interface. The small thickness of the SiO2 layer reduce the oxidation time at high temperature, thus reducing the required thermal budget. The top oxynitride retards boron penetration and the thin SiO2 layer provides a high quality interface. The channel mobility of NMOS devices with this dual dielectric is equal to the mobility of devices with a RTO dielectric grown at 950°C.

Original languageEnglish
Title of host publicationTechnical Digest - International Electron Devices Meeting
Editors Anon
PublisherPubl by IEEE
Pages459-462
Number of pages4
ISBN (Print)0780314506
Publication statusPublished - 1993
EventProceedings of the 1993 IEEE International Electron Devices Meeting - Washington, DC, USA
Duration: Dec 5 1993Dec 8 1993

Publication series

NameTechnical Digest - International Electron Devices Meeting
ISSN (Print)0163-1918

Other

OtherProceedings of the 1993 IEEE International Electron Devices Meeting
CityWashington, DC, USA
Period12/5/9312/8/93

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • Cite this

    Manchanda, L., Weber, G. R., Mansfield, W., Boulin, D. M., Krisch, K., Kim, Y. O., Storz, R., Moriya, N., Luftman, H. S., Feldman, L. C., Green, M. L., Kistler, R. C., Lee, J. T. C., & Klemens, F. (1993). Boron-retarding and high interface quality thin fate dielectric for deep-submicron devices. In Anon (Ed.), Technical Digest - International Electron Devices Meeting (pp. 459-462). (Technical Digest - International Electron Devices Meeting). Publ by IEEE.