Boronated tetrahedral amorphous carbon (ta-C:B)

M. Chhowalla, Y. Yin, G. A.J. Amaratunga, D. R. McKenzie, Th Frauenheim

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Abstract

We have deposited boronated highly tetrahedral amorphous carbon (ta-C:B) films with low stress using a filtered cathodic vacuum arc (FCVA). The sp3 fraction, hardness and resistivity were measured as a function of the ion energy and were found to reach a maximum above 50 eV for B concentrations of 2 and 4%. The most significant result we found was that highly tetrahedral a-C:B film (sp3≈80%) with low stress (1-3 GPa) with B concentrations up to 4% could be obtained. The B in the films was found to be predominantly (∼75%) sp2 bonded. The bond length and angle of ta-C:B found using the radial distribution function were similar to ta-C, confirming its tetrahedral nature. Additionally, the stress in the films did not vary with the ion energy or sp3 fraction unlike in undoped ta-C films. The ta-C:B films also exhibited higher resistivity than ta-C. This is believed to be related to the reduction of defect density measured by electron spin resonance, although the optical band gap was similar to ta-C (2.0-2.4 eV).

Original languageEnglish
Pages (from-to)207-211
Number of pages5
JournalDiamond and Related Materials
Volume6
Issue number2-4
Publication statusPublished - Mar 1 1997

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Keywords

  • Carbon films
  • Filtered cathodic vacuum arc
  • Ta-C:B

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Chhowalla, M., Yin, Y., Amaratunga, G. A. J., McKenzie, D. R., & Frauenheim, T. (1997). Boronated tetrahedral amorphous carbon (ta-C:B). Diamond and Related Materials, 6(2-4), 207-211.