TY - JOUR
T1 - Breath figure–derived porous semiconducting films for organic electronics
AU - Zhang, Xinan
AU - Wang, Binghao
AU - Huang, Lizhen
AU - Huang, Wei
AU - Wang, Zhi
AU - Zhu, Weigang
AU - Chen, Yao
AU - Mao, Yan Li
AU - Facchetti, Antonio
AU - Marks, Tobin J.
N1 - Funding Information:
We thank AFOSR (FA9550-18-1-0320), the Northwestern University MRSEC (NSF DMR-1720139), and Flexterra Inc. for support of this research. X.Z. thanks the National Natural Science Foundation of China (grant no. U1504625) and the Youth Backbone Teacher Training Program in Henan province (grant no. 2017GGJS021). This work made use of the J. B. Cohen X-Ray Diffraction Facility, EPIC facility, Keck-II facility, and SPID facility of the NUANCE Center at Northwestern University, which received support from the Soft and Hybrid Nanotechnology Experimental (SHyNE) Resource (NSF NNCI-1542205), the MRSEC program (NSF DMR-1720139) at the Materials Research Center, the International Institute for Nanotechnology (IIN), the Keck Foundation, and the State of Illinois, through the IIN.
PY - 2020
Y1 - 2020
N2 - Porous semiconductor film morphologies facilitate fluid diffusion and mass transport into the charge-carrying layers of diverse electronic devices. Here, we report the nature-inspired fabrication of several porous organic semiconductor-insulator blend films [semiconductor: P3HT (p-type polymer), C8BTBT (p-type small-molecule), and N2200 (n-type polymer); insulator: PS] by a breath figure patterning method and their broad and general applicability in organic thin-film transistors (OTFTs), gas sensors, organic electrochemical transistors (OECTs), and chemically doped conducting films. Detailed morphological analysis of these films demonstrates formation of textured layers with uniform nanopores reaching the bottom substrate with an unchanged solid-state packing structure. Device data gathered with both porous and dense control semiconductor films demonstrate that the former films are efficient TFT semiconductors but with added advantage of enhanced sensitivity to gases (e.g., 48.2%/ppm for NO2 using P3HT/PS), faster switching speeds (4.7 s for P3HT/PS OECTs), and more efficient molecular doping (conductivity, 0.13 S/m for N2200/PS).
AB - Porous semiconductor film morphologies facilitate fluid diffusion and mass transport into the charge-carrying layers of diverse electronic devices. Here, we report the nature-inspired fabrication of several porous organic semiconductor-insulator blend films [semiconductor: P3HT (p-type polymer), C8BTBT (p-type small-molecule), and N2200 (n-type polymer); insulator: PS] by a breath figure patterning method and their broad and general applicability in organic thin-film transistors (OTFTs), gas sensors, organic electrochemical transistors (OECTs), and chemically doped conducting films. Detailed morphological analysis of these films demonstrates formation of textured layers with uniform nanopores reaching the bottom substrate with an unchanged solid-state packing structure. Device data gathered with both porous and dense control semiconductor films demonstrate that the former films are efficient TFT semiconductors but with added advantage of enhanced sensitivity to gases (e.g., 48.2%/ppm for NO2 using P3HT/PS), faster switching speeds (4.7 s for P3HT/PS OECTs), and more efficient molecular doping (conductivity, 0.13 S/m for N2200/PS).
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U2 - 10.1126/sciadv.aaz1042
DO - 10.1126/sciadv.aaz1042
M3 - Article
C2 - 32232157
AN - SCOPUS:85082470927
VL - 6
JO - Science advances
JF - Science advances
SN - 2375-2548
IS - 13
ER -