Bridge-enhanced nanoscale impedance microscopy

L. S.C. Pingree; M. C. Hersam

doi:10.1063/1.2137874

Bridge-enhanced nanoscale impedance microscopy

L. S.C. Pingree, M. C. Hersam

Northwestern University

Research output: Contribution to journal › Article › peer-review

31 Citations (Scopus)

Abstract

A conductive atomic force microscopy (cAFM) technique has been developed that is capable of quantitatively measuring the magnitude and phase of alternating current flow through the tip/sample junction with a five order of magnitude improvement in sensitivity. Bridge-enhanced nanoscale impedance microscopy (BE-NIM) uses a tunable resistor/capacitor bridge circuit to null the spurious contribution to the tip/sample current caused by fringe capacitance between the cAFM cantilever and the sample. As a proof of principle, BE-NIM is used to characterize an array of electron-beam lithographically patterned metal-oxide-semiconductor capacitors and compared directly to conventional nanoscale impedance microscopy. In addition, BE-NIM is applied to a multiwalled carbon nanotube/poly (m -phenylenevinylene-co-2,5-dioctyloxy-p- phenylenevinylene) nanocomposite material, on which the alternating current behavior of individual nanoscale conductive pathways is quantitatively probed.

Original language	English
Article number	233117
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	23
DOIs	https://doi.org/10.1063/1.2137874
Publication status	Published - 2005

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Bridge-enhanced nanoscale impedance microscopy",

abstract = "A conductive atomic force microscopy (cAFM) technique has been developed that is capable of quantitatively measuring the magnitude and phase of alternating current flow through the tip/sample junction with a five order of magnitude improvement in sensitivity. Bridge-enhanced nanoscale impedance microscopy (BE-NIM) uses a tunable resistor/capacitor bridge circuit to null the spurious contribution to the tip/sample current caused by fringe capacitance between the cAFM cantilever and the sample. As a proof of principle, BE-NIM is used to characterize an array of electron-beam lithographically patterned metal-oxide-semiconductor capacitors and compared directly to conventional nanoscale impedance microscopy. In addition, BE-NIM is applied to a multiwalled carbon nanotube/poly (m -phenylenevinylene-co-2,5-dioctyloxy-p- phenylenevinylene) nanocomposite material, on which the alternating current behavior of individual nanoscale conductive pathways is quantitatively probed.",

author = "Pingree, {L. S.C.} and Hersam, {M. C.}",

note = "Funding Information: The authors thank Matt Russell and Professor Tobin Marks in the Department of Chemistry at Northwestern University for the electron-beam lithography. The authors also thank Dr. Martin Cadek and Professor Werner Blau from the Department of Physics at Trinity College in Dublin, Ireland for the MWNT/PmPV sample. This work was supported by the NASA Institute for Nanoelectronics and Computing under Award No. NCC 2-1363 and the National Science Foundation under Award Nos. DMR-0134706 and CMS-0304472. The authors also acknowledge use of characterization facilities supported by the Northwestern University MRSEC (NSF DMR-0076097). ",

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